A. Shappir

Subthreshold slope degradation model for localized-charge-trapping based non-volatile memory devices

B. Eitan, E. Lusky, Y. Shacham-Diamand, 2003 .

Spatial characterization of localized charge trapping and charge redistribution in the NROM device

Boaz Eitan, I. Bloom, Assaf Shappir, 2004 .

Traps spectroscopy of the Si3Ni4 layer using localized charge-trapping nonvolatile memory device

Boaz Eitan, I. Bloom, Assaf Shappir, 2004 .

Relaxation of localized charge in trapping-based nonvolatile memory devices

M. Janai, B. Eitan, A. Shappir, 2008, 2008 IEEE International Reliability Physics Symposium.

Data retention reliability model of NROM nonvolatile memory products

M. Janai, G. Cohen, B. Eitan, 2004, IEEE Transactions on Device and Materials Reliability.

Investigation of channel hot electron injection by localized charge-trapping nonvolatile memory devices

B. Eitan, A. Shappir, I. Bloom, 2004, IEEE Transactions on Electron Devices.

The two-bit NROM reliability

M. Janai, G. Cohen, B. Eitan, 2004, IEEE Transactions on Device and Materials Reliability.

Lateral charge transport in the Nitride layer of the NROM non-volatile memory device

Yosi Shacham-Diamand, Boaz Eitan, I. Bloom, 2004 .