T. Frost

发表

Room temperature electrically injected polariton laser.

Md. Zunaid Baten, P. Bhattacharya, T. Frost, 2014, Physical review letters.

P. Bhattacharya, T. Frost, B. Ooi, 2016, 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).

III-Nitride Quantum Dots for Optoelectronic Devices

P. Bhattacharya, T. Frost, S. Deshpande, 2019, Molecular Beam Epitaxy.

Quantum dot rolled-up microtube optoelectronic integrated circuit.

P. Bhattacharya, T. Frost, S. Bhowmick, 2013, Optics letters.

Red and Near-Infrared III-Nitride Quantum Dot Lasers

P. Bhattacharya, J. Dallesasse, T. Frost, 2017, IEEE Journal of Selected Topics in Quantum Electronics.

InGaN/GaN Quantum Dot Red $(\lambda=630~{\rm nm})$ Laser

P. Bhattacharya, K. Sun, T. Frost, 2013, IEEE Journal of Quantum Electronics.

Characteristics of a high speed 1.22 μm tunnel injection p-doped quantum dot excited state laser

P. Bhattacharya, T. Frost, Wei Guo, 2011 .

Nitride-based quantum dot visible lasers

P. Bhattacharya, T. Frost, A. Banerjee, 2013 .

Green-Emitting $(\lambda=525~{\rm nm})$ InGaN/GaN Quantum Dot Light Emitting Diodes Grown on Quantum Dot Dislocation Filters

P. Bhattacharya, T. Frost, A. Banerjee, 2014, IEEE Journal of Quantum Electronics.

III-Nitride Electrically Pumped Visible and Near-Infrared Nanowire Lasers on (001) Silicon

P. Bhattacharya, T. Frost, A. Hazari, 2017 .

Detailed model for the In0.18Ga0.82N/GaN self-assembled quantum dot active material for λ = 420 nm emission.

P. Bhattacharya, J. Dallesasse, T. Frost, 2014, Optics express.

InGaN/GaN Quantum Dot and Nanowire LEDs and Lasers

P. Bhattacharya, T. Frost, A. Banerjee, 2014 .

Red-emitting InGaN/GaN quantum dot laser

P. Bhattacharya, T. Frost, A. Banerjee, 2013, 71st Device Research Conference.

Temperature-dependent measurement of Auger recombination in In0.40Ga0.60N/GaN red-emitting (λ = 630 nm) quantum dots

P. Bhattacharya, T. Frost, A. Banerjee, 2014 .

Integration of 1.3-$\mu{\rm m}$ Quantum-Dot Lasers With ${\rm Si}_{3}{\rm N}_{4}$ Waveguides for Single Mode Optical Interconnects

P. Bhattacharya, T. Frost, Wei Guo, 2012, IEEE Journal of Quantum Electronics.

UV spectroscopy : techniques, instrumentation, data handling

T. Frost, B. J. Clark, Russell, 1993 .

Optical constants of In(x)Ga(1-x)N (0 ≤ x ≤ 0.73) in the visible and near-infrared wavelength regimes.

Md. Zunaid Baten, Z. Mi, P. Bhattacharya, 2015, Optics letters.

Formation and properties of InGaN QDs: Influence of substrates

P. Bhattacharya, T. Frost, A. Hazari, 2019, Applied Physics Letters.

Room temperature electrically injected In0.4Ga0.6N/GaN quantum-dot visible (λ=620 nm) single photon source

P. Bhattacharya, T. Frost, S. Deshpande, 2014, 2014 IEEE Photonics Conference.

Electrically pumped single-photon emission at room temperature from a single InGaN/GaN quantum dot

P. Bhattacharya, T. Frost, S. Deshpande, 2014 .

Physical model for high indium content InGaN/GaN self-assembled quantum dot ridge-waveguide lasers emitting at red wavelengths (λ ~ 630 nm).

P. Bhattacharya, J. Dallesasse, T. Frost, 2015, Optics express.

Standards and Best Practice in Absorption Spectrometry

T. Frost, C. Burgess, 1999 .

An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination.

Pallab Bhattacharya, Tien Khee Ng, Boon S Ooi, 2015, Nanoscale.

III-Nitride high temperature single-photon sources

Pallab Bhattacharya, Saniya Deshpande, Arnab Hazari, 2015, Photonics West - Optoelectronic Materials and Devices.

High performance red-emitting multiple layer InGaN/GaN quantum dot lasers

Md. Zunaid Baten, P. Bhattacharya, T. Frost, 2016 .

Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

Pallab Bhattacharya, Boon S. Ooi, Arnab Hazari, 2015 .

Encyclopedia of Spectroscopy and Spectrometry, 2nd Edition

A. M. Pollard, A. D. Bain, Jimmy D Bell, 2010 .

High Performance InAs/${\rm In}_{0.53}{\rm Ga}_{0.23}{\rm Al}_{0.24}{\rm As}$/InP Quantum Dot 1.55 $\mu{\rm m}$ Tunnel Injection Laser

Pallab Bhattacharya, Boon S. Ooi, Md. Zunaid Baten, 2014, IEEE Journal of Quantum Electronics.

Room-Temperature Spin Polariton Diode Laser.

Md. Zunaid Baten, P. Bhattacharya, A. Kavokin, 2017, Physical review letters.

A monolithic electrically-injected nanowire array edge-emitting laser on (001) silicon

T. Frost, P. Bhattacharya, E. Stark, 2014, Photonics West - Optoelectronic Materials and Devices.

Formation and nature of InGaN quantum dots in GaN nanowires.

Pallab Bhattacharya, Zetian Mi, Saniya Deshpande, 2015, Nano letters.

High Temperature Stable Operation of 1.3- $\mu$ m Quantum-Dot Laser Integrated With Single-Mode Tapered Si $_{3}$ N $_{4}$ Waveguide

P. Bhattacharya, T. Frost, Wei Guo, 2012 .

High temperature stability in integrable quantum dot lasers with dry etched mirror facets for on-chip optical interconnects

P. Bhattacharya, T. Frost, Chi‐Sen Lee, 2011, IEEE Photonic Society 24th Annual Meeting.

InGaN/GaN self-organized quantum dot lasers grown by molecular beam epitaxy

P. Bhattacharya, T. Frost, A. Banerjee, 2013 .

Continuous-wave operation and differential gain of InGaN/GaN quantum dot ridge waveguide lasers (λ = 420 nm) on c-plane GaN substrate

Pallab Bhattacharya, Animesh Banerjee, P. Bhattacharya, 2012 .

An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination.

P. Bhattacharya, T. Frost, B. Ooi, 2015, Nanoscale.

The role of defects in lowering the effective polariton temperature in electric and optically pumped polariton lasers

P. Bhattacharya, A. Kavokin, T. Frost, 2016 .

Small-signal modulation characteristics of a polariton laser

P. Bhattacharya, A. Kavokin, T. Frost, 2015, Scientific Reports.

GaAs-based high temperature electrically pumped polariton laser

J. Fastenau, P. Bhattacharya, T. Frost, 2014 .