H. McAdams

Cosmic ray neutron induced upsets as a major contributor to the soft error rate of current and future generation DRAMs

D. E. Russell, E. Smith, W. Mckee, 1996, Proceedings of International Reliability Physics Symposium.

Reliability properties of low voltage PZT ferroelectric capacitors and arrays

H. McAdams, J. McPherson, K. Udayakumar, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

Ferroelectric SPICE model, testing and fitting

H. McAdams, S. Summerfelt, John R. Rodriguez, 2008, 2008 17th IEEE International Symposium on the Applications of Ferroelectrics.

Embedded ferroelectric memory using a 130-nm 5 metal layer Cu / FSG logic process

H. McAdams, K. Udayakumar, J. Rodriguez, 2004, Proceedings. 2004 IEEE Computational Systems Bioinformatics Conference.

Bit Distribution and Reliability of High Density 1.5 V Ferroelectric Random Access Memory Embedded with 130 nm, 5 lm Copper Complementary Metal Oxide Semiconductor Logic

Hugh P. McAdams, K. Remack, K. Boku, 2006 .

Reliability properties of low-voltage ferroelectric capacitors and memory arrays

K. Remack, K. Boku, T. Moise, 2004, IEEE Transactions on Device and Materials Reliability.

A 64-Mb embedded FRAM utilizing a 130-nm 5LM Cu/FSG logic process

S. Natarajan, J. Rodriguez, T. Moise, 2004, IEEE Journal of Solid-State Circuits.

Demonstration of a 4 Mb, high density ferroelectric memory embedded within a 130 nm, 5 LM Cu/FSG logic process

J. Rodriguez, K. Remack, K. Boku, 2002, Digest. International Electron Devices Meeting,.

An FRAM-Based Nonvolatile Logic MCU SoC Exhibiting 100% Digital State Retention at ${\rm VDD}=$ 0 V Achieving Zero Leakage With ${<}$ 400-ns Wakeup Time for ULP Applications

Hugh P. McAdams, Michael Clinton, Sudhanshu Khanna, 2014, IEEE Journal of Solid-State Circuits.