J. McPherson

Y. Nishi, J. McPherson, Y. Nishi, 1999, Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394).

Thermochemical description of dielectric breakdown in high dielectric constant materials

J. McPherson, H. Mogul, A. Shanware, 2003 .

Comparison of E and 1/E TDDB models for SiO/sub 2/ under long-term/low-field test conditions

K. Banerjee, J. McPherson, V. Reddy, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Trends in the ultimate breakdown strength of high dielectric-constant materials

J. McPherson, H. Mogul, A. Shanware, 2003 .

Reliability properties of low voltage PZT ferroelectric capacitors and arrays

H. McAdams, J. McPherson, K. Udayakumar, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

AC electromigration characterization and modeling of multilayered interconnects

W. Hunter, J. McPherson, J.W. McPherson, 1993, 31st Annual Proceedings Reliability Physics 1993.

Electromigration reliability improvement of W-plug vias by titanium layering

J. McPherson, R. Havemann, C. Graas, 1994, Proceedings of 1994 IEEE International Reliability Physics Symposium.

Increases in Lorentz Factor with Dielectric Thickness

J. McPherson, 2016 .

Time-To-Failure Statistics

J. McPherson, 2013 .

Electromigration and microstructural properties of AI-Si/Ti/AI-Si VLSI metallization

J. McPherson, C. Dunn, C. F. Dunn, 1986 .

Effective kinetic variations with stress duration for multilayered metallizations

J. McPherson, J. Ondrusek, T. Sugiura, 1988, 26th Annual Proceedings Reliability Physics Symposium 1988.

The dependence of W-plug via EM performance on via size

K. Banerjee, J. McPherson, H. A. Le, 1996 .

Kinetics of Contact Wearout for Silicided (TiSi2) and Non-Silicided Contacts

J. McPherson, J. Ondrusek, C. Dunn, 1987, 25th International Reliability Physics Symposium.

Reliability Physics and Engineering: Time-To-Failure Modeling

J. McPherson, 2010 .

A Statistical Evaluation of the Field Acceleration Parameter Observed During Time Dependent Dielectric Breakdown Testing of Silica-Based Low-k Interconnect Dielectrics

J. McPherson, E. Ogawa, Jinyoung Kim, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

POROUS LOW-K SILICA-BASED INTERCONNECT DIELECTRICS

J. McPherson, H. Mogul, E. Ogawa, 2003 .

Reliability evaluation of HfSiON gate dielectric film with 12.8 /spl Aring/ SiO/sub 2/ equivalent thickness

J. McPherson, R. Khamankar, A. Rotondaro, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Effects of dielectric liners on TDDB lifetime of a Cu/ low-k interconnect

J. McPherson, T. Tsui, R. Willecke, 2004, Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729).

Reliability analysis method for low-k interconnect dielectrics breakdown in integrated circuits

Ennis T. Ogawa, Joe W. McPherson, J. McPherson, 2005 .

Stress-induced voiding under vias connected to wide Cu metal leads

Joe W. McPherson, M. K. Jain, William R. McKee, 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

Leakage, breakdown, and TDDB characteristics of porous low-k silica-based interconnect dielectrics

Ennis T. Ogawa, Joe W. McPherson, J. McPherson, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

Breakdown characteristics of interconnect dielectrics

J. McPherson, E. Ogawa, G.S. Haase, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

Induced moment magnetism in TbAsO4: Constant coupling approximation☆

J. McPherson, Yung-Li Wang, 1976 .

Magnetic field effects in the cooperative Jahn-Teller system TbVO4

J. McPherson, Yung-Li Wang, 1975 .

Proposed universal relationship between dielectric breakdown and dielectric constant

J. Rodriguez, J. Kim, J. McPherson, 2002, Digest. International Electron Devices Meeting,.

An extended read model for grain boundaries in GaAs

J. McPherson, E. Stefanakos, W. Collis, 1980 .

Brief history of JEDEC qualification standards for silicon technology and their applicability(?) to WBG semiconductors

J. W. McPherson, J. McPherson, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Time dependent dielectric breakdown physics - Models revisited

J. W. McPherson, J. McPherson, 2012, Microelectron. Reliab..

Stress Dependent Activation Energy

J. McPherson, J.W. McPherson, 1986, 24th International Reliability Physics Symposium.

Temperature-cycling acceleration factors for aluminium metallization failure in VLSI applications

J. W. McPherson, J. McPherson, C. Dunn, 1990, 28th Annual Proceedings on Reliability Physics Symposium.

Characterization of GaAs layers grown on polycrystalline GaAs by LPE and current controlled LPE

J. McPherson, E. Stefanakos, W. Collis, 1980 .

Scaling-induced reductions in CMOS reliability margins and the escalating need for increased design-in reliability efforts

J. W. McPherson, J. McPherson, 2001, Proceedings of the IEEE 2001. 2nd International Symposium on Quality Electronic Design.

Reliability challenges for deep submicron interconnects

J. W. McPherson, H. A. Le, C. D. Graas, 1997 .

Effect of stresses on electromigration

J. W. McPherson, J. McPherson, C. Dunn, 1991, 29th Annual Proceedings Reliability Physics 1991.

Barrier metal effects on electromigration of layered aluminum metallization

J. W. McPherson, H. H. Hoang, J. McPherson, 1990, Seventh International IEEE Conference on VLSI Multilevel Interconnection.

Electromigration performance of CVD-W/Al-alloy multilayered metallization

J. McPherson, J. Ondrusek, C. A. Martín, 1990, 28th Annual Proceedings on Reliability Physics Symposium.

Via electromigration performance of Ti/W/Al-Cu(2%) multilayered metallization

J. McPherson, C. Martin, 1989, Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference.

Effeci of Stresses on Void Nucleation During Electromigration

J. McPherson, C. Dunn, F. Brotzen, 1991 .

Corrosion susceptibility of Al-Cu and Al-Cu-Si films

J. McPherson, J. D. Lawrence, 1991, 29th Annual Proceedings Reliability Physics 1991.

Reliability challenges for 45nm and beyond

J. W. McPherson, J. McPherson, 2006, 2006 43rd ACM/IEEE Design Automation Conference.

Reliability properties of low-voltage ferroelectric capacitors and memory arrays

K. Remack, K. Boku, T. Moise, 2004, IEEE Transactions on Device and Materials Reliability.

Reliability Physics and Engineering: Time-To-Failure Modeling

J. W. McPherson, J. McPherson, 2010 .

Physical model for the frequency dependence of time-dependent dielectric breakdown (TDDB)

J. McPherson, 2023, AIP Advances.

On why dielectric breakdown strength reduces with dielectric thickness

J. W. McPherson, J. McPherson, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Electrical stability of a 65nm technology Ni-silicided junctions under accelerated bias stressing

J. McPherson, H. Mogul, 2007 .

Band Bending and Passivation Studies of GaAs Grain Boundaries

J. McPherson, E. Stefanakos, W. Collis, 1980 .

Modeling of Interconnect Dielectric Lifetime Under Stress Conditions and New Extrapolation Methodologies for Time-Dependent Dielectric Breakdown

J. McPherson, G.S. Haase, J.W. McPherson, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Understanding the underlying degradation physics for proper time-to-failure distribution selection

J. W. McPherson, J. McPherson, 2015, 2015 IEEE International Reliability Physics Symposium.

Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations

J. McPherson, E. Brunt, D. Lichtenwalner, 2023, 2023 IEEE International Reliability Physics Symposium (IRPS).

Lorentz factor determination for local electric fields in semiconductor devices utilizing hyper-thin dielectrics

J. McPherson, 2015 .

Recent Observations on VLSI Bond Pad Corrosion Kinetics

J. McPherson, C. Dunn, 1988 .

A wafer-level corrosion susceptibility test for multilayered metallization

J. McPherson, S. Fan, 1988, 26th Annual Proceedings Reliability Physics Symposium 1988.

Leakage and breakdown reliability issues associated with low-k dielectrics in a dual-damascene Cu process

W. Mckee, J. McPherson, R. Tsu, 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).

Sampling Plans and Confidence Intervals

J. McPherson, 2013 .

Gaussian Statistics: An Overview

J. McPherson, 2010 .

Evaluation of the positive biased temperature stress stability in HfSiON gate dielectrics

J. McPherson, S. Aur, P. Nicollian, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

Time-to-Failure Modeling

J. W. McPherson, J. McPherson, 2010 .

Empirical model for fatigue of PZT ferroelectric memories

Theodore S. Moise, Stephen R. Gilbert, Joe W. McPherson, 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

Time Dependent Dielectric Breakdown Characteristics of Low-k Dielectric (SiOC) Over a Wide Range of Test Areas and Electric Fields

J. McPherson, E. Ogawa, Jinyoung Kim, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Advanced CMOS transistors with a novel HfSiON gate dielectric

H. Bu, R. Khamankar, T. Grider, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

PHYSICS AND CHEMISTRY OF INTRINSIC TIME-DEPENDENT DIELECTRIC BREAKDOWN IN SiO2 DIELECTRICS

J. McPherson, 2001 .