T. Lenosky

发表

Questioning the existence of a unique ground-state structure for Si clusters

S. Goedecker, C. Umrigar, W. Hellmann, 2007 .

Ab initio energetics of boron-interstitial clusters in crystalline Si

T. Lenosky, B. Sadigh, S. Theiss, 2000 .

Finding activation pathway of coupled displacive-diffusional defect processes in atomistics: Dislocation climb in fcc copper

Yunzhi Wang, Erik Bitzek, Ju Li, 2012 .

Parameter-free modelling of dislocation motion: The case of silicon

T. Lenosky, W. Cai, V. Bulatov, 2001 .

Molecular dynamics simulations of compressed hydrogen

J. Kress, T. Lenosky, S. Bickham, 2000 .

Density-functional calculation of the Hugoniot of shocked liquid deuterium

J. Kress, T. Lenosky, S. Bickham, 2000 .

Structure and stability of semiconductor tip apexes for atomic force microscopy

S. Goedecker, T. Lenosky, P. Jelínek, 2009, Nanotechnology.

Classical potential describes martensitic phase transformations between the α, β, and ω titanium phases

R. Hennig, T. Lenosky, J. Wilkins, 2007, 0706.1764.

Molecular-dynamics modeling of the Hugoniot of shocked liquid deuterium

J. Kress, T. Lenosky, L. Collins, 1997 .

Molecular Dynamics Modeling of Dense Hydrogen

J. Kress, T. Lenosky, N. Troullier, 2002 .

Simulations of fluid hydrogen: comparison of a dissociation model with tight-binding molecular dynamics.

J. Kress, T. Lenosky, R. Redmer, 1999, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics.

MOLECULAR-DYNAMICS MODELING OF SHOCK-COMPRESSED LIQUID HYDROGEN

J. Kress, T. Lenosky, L. Collins, 1997 .

Layering transitions and the structure of dense hydrogen

T. Lenosky, N. Ashcroft, B. Edwards, 1996 .

Questioning the existence of a unique ground-state structure for Si clusters

S. Goedecker, C. Umrigar, W. Hellmann, 2006, cond-mat/0610568.

Global minimum determination of the Born-Oppenheimer surface within density functional theory.

S. Goedecker, W. Hellmann, T. Lenosky, 2005, Physical review letters.

First-principles calculation of intrinsic defect formation volumes in silicon

T. Lenosky, B. Sadigh, T. D. Rubia, 2005, cond-mat/0508329.

Structural Models of Negatively Curved Graphitic Carbon

D. Muller, T. Lenosky, V. Elser, 1992 .

Energetic and vibrational analysis of hydrogenated silicon m vacancies above saturation

S. Goedecker, T. Lenosky, L. Genovese, 2014 .

ELECTRONIC STRUCTURE OF BLACK SODALITE

T. Lenosky, A. Demkov, O. Sankey, 1998 .

Thermochemical and Mechanical Stabilities of the Oxide Scale of ZrB2+SiC and Oxygen Transport Mechanisms

T. Lenosky, Ju Li, S. Yip, 2008 .

Ab initio based empirical potential used to study the mechanical properties of molybdenum

Richard G. Hennig, John W. Wilkins, William W. Tipton, 2012 .

Ubiquitous mechanisms of energy dissipation in noncontact atomic force microscopy.

S. Goedecker, T. Lenosky, E. Meyer, 2008, Physical review letters.

MECHANISM OF BORON DIFFUSION IN SILICON : AN AB INITIO AND KINETIC MONTE CARLO STUDY

Babak Sadigh, Silva K. Theiss, T. Lenosky, 1999 .

Large enhancement of boron solubility in silicon due to biaxial stress

S. Louie, T. Lenosky, M. Giles, 2002 .

First-principles investigation of radiation induced defects in Si and SiC

A. Voter, J. Kress, T. Lenosky, 1998 .

Atomic scale models of ion implantation and dopant diffusion in silicon

M. Johnson, T. Lenosky, B. Sadigh, 1999 .

Quantum Molecular Dynamics Simulations of Dense Matter

J. Kress, T. Lenosky, S. Bickham, 1999 .

Energetics of negatively curved graphitic carbon

Xavier Gonze, Thomas Lenosky, M. Teter, 1992, Nature.

Highly optimized empirical potential model of silicon

Arthur F. Voter, Babak Sadigh, Vasily V. Bulatov, 2000 .

Highly optimized tight-binding model of silicon

Arthur F. Voter, James B. Adams, Joel D. Kress, 1997 .

Fast Diffusion Mechanism of Silicon Tri-interstitial Defects

Ny, Columbus, Ithaca, 2005, cond-mat/0503479.

Requirements for Calibration in Noninvasive Glucose Monitoring by Raman Spectroscopy

Jeff Bernhardt, Stephen Waydo, William R Freeman, 2009, Journal of diabetes science and technology.

CELEBRATING IJF AT 50 Atomistic aspects of fracture

T. Lenosky, J. Kermode, P. Gumbsch, 2015 .

Energy landscape of silicon tetra‐interstitials using an optimized classical potential

S. Goedecker, R. Hennig, T. Lenosky, 2011 .

Diffusive molecular dynamics and its application to nanoindentation and sintering

Yunzhi Wang, Erik Bitzek, Ju Li, 2011 .

The energy landscape of silicon systems and its description by force fields, tight binding schemes, density functional methods and Quantum Monte Carlo methods

Stefan Goedecker, Luigi Genovese, Shantanu Roy, 2009, 0910.4050.

From compact point defects to extended structures in silicon

R. Hennig, T. Lenosky, J. Wilkins, 2007 .

First-Principles Study of Point-Defect Production in Si and SiC

A. Voter, J. Kress, T. Lenosky, 1997 .

Accelerated dynamics simulations of interstitial-cluster growth

A. Voter, T. Lenosky, Jeongnim Kim, 2001 .

Low-density silicon allotropes for photovoltaic applications

Stefan Goedecker, Maximilian Amsler, Silvana Botti, 2015, 1504.06372.

Quantum molecular dynamics simulations of dense matter

J. Kress, T. Lenosky, W. Windl, 1998 .

Molecular dynamics simulations of compressed liquid hydrogen

J. Kress, T. Lenosky, L. Collins, 1997 .

Dynamical and optical properties of warm dense hydrogen

Wolfgang Windl, Joel D. Kress, Lee A. Collins, 2001 .

First-principles-based predictive simulations of B diffusion and activation in ion implanted Si

T. Lenosky, M. Giles, B. Sadigh, 2000, 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502).

Electronic properties of negative-curvature periodic graphitic carbon surfaces.

Huang, Ching, T. Lenosky, 1993, Physical review. B, Condensed matter.