Tai-su Park

Characteristics of body-tied triple-gate pMOSFETs

Donggun Park, Tai-su Park, Hye Jin Cho, 2004, IEEE Electron Device Letters.

Characteristics of the full CMOS SRAM cell using body-tied TG MOSFETs (bulk FinFETs)

Donggun Park, Kinam Kim, Tai-su Park, 2006, IEEE Transactions on Electron Devices.

An optimized densification of the filled oxide for quarter micron shallow trench isolation (STI)

Tai-su Park, Yu Gyun Shin, Han Sin Lee, 1996, 1996 Symposium on VLSI Technology. Digest of Technical Papers.

Modeling of cumulative thermo-mechanical stress (CTMS) produced by the shallow trench isolation process for 1 Gb DRAM and beyond

Tai-su Park, Kang-Yoon Lee, Jong-Woo Park, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).