H. Puchner

发表

An advanced model for dopant diffusion in polysilicon

S. Selberherr, H. Puchner, 1995 .

Neutron displacement damage of an integrated bandgap voltage reference of a 90nm technology CMOS based SRAM

H. Puchner, J. Tausch, H. Puchner, 2011, 2011 12th European Conference on Radiation and Its Effects on Components and Systems.

High Voltage LDMOS Transistors utilizing a Triple Well Architecture

H. Puchner, Sungkwon Lee, L. Hinh, 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.

Process impact on SRAM alpha-particle SEU performance

H. Puchner, Y.Z. Xu, A. Chatila, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

SEU characterization of commercial and custom-designed SRAMs based on 90 nm technology and below

H. Puchner, M. van Goethem, S. Brandenburg, 2020, 2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC).

Direct Ionization Impact on Accelerator Mixed-Field Soft-Error Rate

H. Puchner, V. Ferlet-Cavrois, F. Wrobel, 2020, IEEE Transactions on Nuclear Science.

The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate

S. E. Swanson, R. Reed, P. Marshall, 2015, IEEE Transactions on Nuclear Science.

A Case Study in Predictive Three-Dimensional Topography Simulation Based on a Level-Set Algorithm

J. Sethian, S. Selberherr, J. Fugger, 2004 .

Analysis of Hamming EDAC SRAMs Using Simplified Birthday Statistics

H. J. Tausch, H. Puchner, 2015, IEEE Transactions on Nuclear Science.

Simulation of ultra-low energy ion implantation from a remote plasma source using Monte Carlo techniques

H. Puchner, V. Sukharev, S. Aronowitz, 2000, 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).

SEE on Different Layers of Stacked-SRAMs

G. Tsiligiannis, L. Dilillo, F. Wrobel, 2015, IEEE Transactions on Nuclear Science.

Experimental and Analytical Study of the Responses of Nanoscale Devices to Neutrons Impinging at Various Incident Angles

F. J. Franco, J. A. Clemente, H. Puchner, 2020, IEEE Transactions on Nuclear Science.

Influence of junction capacitance on SRAM SEU performance [MOSFETs]

Y.Z. Xu, H. Puchner, O. Pohland, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

Radiation induced soft errors in 16 nm floating gate SLC NAND flash memory

S. Shinozaki, H. Puchner, J. Mitani, 2020 .

Minimizing thick resist sidewall slope dependence on design geometry by optimizing bake conditions

H. Puchner, R. Castagnetti, W. Pyka, 2000 .

Impact of Shallow Trench Liner Oxidation Scheme on Junction Leakage

H. Puchner, V. Gopinath, M. Mirabedini, 2001, 31st European Solid-State Device Research Conference.

Effects of nitrogen on the activation/deactivation of boron and indium in n-channel CMOS devices

H. Puchner, S. Aronowitz, V. Zubcov, 2000, 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502).

Impact of High Particle Flux in Radiation Ground Tests with Protons

F. J. Franco, J. A. Clemente, H. Puchner, 2020, 2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS).

Evaluation of a COTS 65-nm SRAM Under 15 MeV Protons and 14 MeV Neutrons at Low VDD

F. J. Franco, J. A. Clemente, H. Puchner, 2020, IEEE Transactions on Nuclear Science.

A Methodology for Deep Sub-0 . 25 m CMOS Technology Prediction

S. Selberherr, T. Grasser, H. Puchner, 2001 .

Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

F. J. Franco, J. A. Clemente, H. Puchner, 2022, IEEE Access.

Investigation of multi-bit upsets in a 150 nm technology SRAM device

H. Puchner, D. Radaelli, Skip Wong, 2005, IEEE Transactions on Nuclear Science.

Investigating the Impact of Radiation-Induced Soft Errors on the Reliability of Approximate Computing Systems

Alberto Bosio, Luigi Dilillo, Helmut Puchner, 2020, 2020 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT).

Simulation of dynamic NBTI degradation for a 90nm CMOS technology

S. Selberherr, H. Puchner, A. Gehring, 2005 .

Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions

Ari Virtanen, Luigi Dilillo, Helmut Puchner, 2016, IEEE Transactions on Nuclear Science.

Dynamic Test Methods for COTS SRAMs

G. Tsiligiannis, L. Dilillo, A. Bosio, 2014, IEEE Transactions on Nuclear Science.

Multiple Cell Upset Classification in Commercial SRAMs

G. Tsiligiannis, L. Dilillo, A. Bosio, 2014, IEEE Transactions on Nuclear Science.

Neutron-induced effects on a self-refresh DRAM

H. Puchner, A. Bosio, M. Letiche, 2022, Microelectronics Reliability.

Optimized subamorphizing silicon implants to modify diffusion and activation of arsenic, boron, and phosphorus implants for shallow junction creation

H. Puchner, S. Aronowitz, J. Kimball, 1999 .

Achieving Accurate In-Memory Neural Network Inference with Highly Overlapping Nonvolatile Memory State Distributions

M. Marinella, H. Puchner, S. Agarwal, 2022, IEEE Electron Devices Technology and Manufacturing Conference.

Single-Event Effects Induced by Heavy Ions in SONOS Charge Trapping Memory Arrays

H. Barnaby, M. Marinella, H. Puchner, 2021, IEEE Transactions on Nuclear Science.

Ionizing Radiation Effects in SONOS-Based Neuromorphic Inference Accelerators

H. Barnaby, M. Marinella, H. Puchner, 2021, IEEE Transactions on Nuclear Science.

Accurate Simulation of Substrate Currents by Accounting for the Hot Electron Tail Population

S. Selberherr, T. Grasser, H. Puchner, 2001, 31st European Solid-State Device Research Conference.

Feature-scale Process Simulation and accurate capacitance extraction for the backend of a 100-nm aluminum/TEOS Process

S. Selberherr, A. Sheikholeslami, H. Puchner, 2004, IEEE Transactions on Electron Devices.

Plasma-Induced Nitridation of the Gate Oxide Dielectrics: Linked Equipment-Feature-Atomic Scale Simulations

H. Puchner, V. Zubkov, S. Aronowitz, 1999, 28th European Solid-State Device Research Conference.

Process simulation for the 1990s

E. Leitner, Siegfried Selberherr, Helmut Puchner, 1995 .

The Viennese integrated system for technology CAD applications

E. Leitner, S. Halama, S. Selberherr, 1995 .

Fabrication of Shallow Junctions with Conventional Furnace Equipment by Using Silicon Preimplants

H. Puchner, S. Aronowitz, 1999 .

Simulation of void formation in interconnect lines

Siegfried Selberherr, Clemens Heitzinger, Helmut Puchner, 2003, SPIE Microtechnologies.

CAPACITANCES IN THE BACKEND OF A 100nm CMOS PROCESS AND THEIR PREDICTIVE SIMULATION

Siegfried Selberherr, Clemens Heitzinger, Helmut Puchner, 2003 .

Predictive simulation of void formation during the deposition of silicon nitride and silicon dioxide films

S. Selberherr, H. Puchner, C. Heitzinger, 2003 .

Failure Mechanism and Sampling Frequency Dependency on TID Response of SAR ADCs

Tiago R. Balen, Helmut Puchner, Carlos J. González, 2021, Journal of Electronic Testing.

Sensitivity Characterization of a COTS 90-nm SRAM at Ultralow Bias Voltage

Hortensia Mecha, Raoul Velazco, Juan Antonio Clemente, 2017, IEEE Transactions on Nuclear Science.

Statistical Anomalies of Bitflips in SRAMs to Discriminate MCUs from SEUs

Hortensia Mecha, Raoul Velazco, Juan Antonio Clemente, 2015, 2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS).

Statistical Anomalies of Bitflips in SRAMs to Discriminate SBUs From MCUs

Hortensia Mecha, Raoul Velazco, Juan Antonio Clemente, 2016, IEEE Transactions on Nuclear Science.

N-Well Engineering to Improve Soft-Error-Rate Immunity for P-Type Substrate SRAM Technologies

H. Puchner, R. Castagnetti, W. Kong, 2001, 31st European Solid-State Device Research Conference.

Neutron Induced Micro SEL Events in COTS SRAM Devices

H. Puchner, D. Radaelli, J. Tausch, 2007, 2007 IEEE Radiation Effects Data Workshop.

Alpha-particle SEU performance of SRAM with triple well

H. Puchner, D. Radaelli, H. Puchner, 2004, IEEE Transactions on Nuclear Science.

A methodology for deep sub-0.25 /spl mu/m CMOS technology prediction

Siegfried Selberherr, Tibor Grasser, Helmut Puchner, 2001 .