C. Zetterling

发表

High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits

Sethu Saveda Suvanam, S. Kuroki, L. Lanni, 2017, IEEE Transactions on Nuclear Science.

SiC bipolar devices for high power and integrated drivers

L. Lanni, C. Zetterling, B. Malm, 2011, 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

SiC power devices — Present status, applications and future perspective

C. Zetterling, M. Ostling, R. Ghandi, 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

Investigation of thermal properties in fabricated 4H-SiC high power bipolar transistors

E. Janzén, C. Zetterling, M. Östling, 2003 .

The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions

Carl-Mikael Zetterling, Robert F. Davis, Mikael Östling, 2002 .

Ohmic contact formation on inductively coupled plasma etched 4H-silicon carbide

C. Zetterling, S. Koo, M. Östling, 2002 .

Microscopic mapping of specific contact resistances and long-term reliability tests on 4H-silicon carbide using sputtered titanium tungsten contacts for high temperature device applications

C. Zetterling, M. Östling, S. Lee, 2002 .

Wide Bandgap Integrated Circuits for High Power Management in Extreme Environments

C. Zetterling, S. Kargarrazi, Muhammad Shakir, 2019, Next-Generation ADCs, High-Performance Power Management, and Technology Considerations for Advanced Integrated Circuits.

500 °C, High Current Linear Voltage Regulator in 4H-SiC BJT Technology

C. Zetterling, S. Rodriguez, H. Elahipanah, 2018, IEEE Electron Device Letters.

500 °C Bipolar SiC Linear Voltage Regulator

L. Lanni, C. Zetterling, S. Saggini, 2015, IEEE Transactions on Electron Devices.

Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC

R. Ghandi, M. Ostling, Luigia Lanni, 2012, IEEE Transactions on Electron Devices.

Optimization of Poly-silicon Process for 3C-SiC Based MOS Devices

C. Zetterling, S. Reshanov, A. Schöner, 2010 .

Intertwined Design: A Novel Lithographic Method to Realize Area Efficient High-Voltage SiC BJTs and Darlington Transistors

C. Zetterling, M. Ostling, H. Elahipanah, 2016, IEEE Transactions on Electron Devices.

500 °C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits

C. Zetterling, M. Östling, H. Elahipanah, 2017, IEEE Electron Device Letters.

Toward 4H-SiC MISFETs Devices Based on ONO (SiO2-Si3N4-SiO2) Structures

C. Zetterling, M. Bakowski, S. Reshanov, 2011 .

Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen

C. Zetterling, Zhitang Song, Chenglu Lin, 2000 .

Growth of SiC thin films on (100) and (111) silicon by pulsed laser deposition combined with a vacuum annealing process

C. Zetterling, Chenglu Lin, M. Östling, 1999 .

High-Voltage (2.8 kV) Implantation-Free 4H-SiC BJTs With Long-Term Stability of the Current Gain

R. Ghandi, M. Ostling, M. Domeij, 2011, IEEE Transactions on Electron Devices.

15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain

C. Zetterling, M. Östling, Keijo Jacobs, 2018, IEEE Electron Device Letters.

Optimal Emitter Cell Geometry in High Power 4H-SiC BJTs

C. Zetterling, M. Ostling, H. Elahipanah, 2015, IEEE Electron Device Letters.

4.5-kV 20-mΩ.cm2 Implantation-Free 4H-SiC BJT with Trench Structures on the Junction Termination Extension

C. Zetterling, M. Östling, H. Elahipanah, 2015 .

Process Variation Tolerant 4H-SiC Power Devices Utilizing Trench Structures

C. Zetterling, M. Östling, B. Buono, 2013 .

Investigation of Current Gain Degradation in 4H-SiC Power BJTs

C. Zetterling, B. Malm, M. Östling, 2012 .

SiC BJT Compact DC Model With Continuous- Temperature Scalability From 300 to 773 K

C. Zetterling, Ye Tian, R. Hedayati, 2017, IEEE Transactions on Electron Devices.

Deposition of diamond films on single crystalline silicon carbide substrates

Rui F. Silva, C. Zetterling, F. Oliveira, 2020, Diamond and Related Materials.

Electrical Characterization of Integrated 2-Input TTL NAND Gate at Elevated Temperature, Fabricated in Bipolar SiС-Technology

C. Zetterling, H. Elahipanah, Muhammad Shakir, 2018, Materials Science Forum.

Bipolar integrated circuits in SiC for extreme environment operation

L. Lanni, A. Hallén, C. Zetterling, 2017 .

A study on positive-feedback configuration of a bipolar SiC high temperature operational amplifier

L. Lanni, C. Zetterling, Saleh Kargarrazi, 2016 .

High Temperature Bipolar Master-Slave Comparator and Frequency Divider in 4H-SiC Technology

L. Lanni, C. Zetterling, Muhammad Shakir, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Silicon Carbide Fully Differential Amplifier Characterized Up to 500 °C

L. Lanni, C. Zetterling, A. Rusu, 2016, IEEE Transactions on Electron Devices.

Integrated circuits in silicon carbide for high-temperature applications

C. Zetterling, 2015 .

Lateral p-n-p Transistors and Complementary SiC Bipolar Technology

L. Lanni, C. Zetterling, B. Malm, 2014, IEEE Electron Device Letters.

Wide Temperature Range Integrated Bandgap Voltage References in 4H–SiC

L. Lanni, C. Zetterling, A. Rusu, 2016, IEEE Electron Device Letters.

Low resistivity ohmic contacts on 4H-Silicon carbide for high power and high temperature device applications

C. Zetterling, U. Jansson, M. Östling, 2002 .

Electrical characterization of titanium-based ohmic contacts to 4h-silicon carbide for high-power and high-temperature operation

C. Zetterling, M. Östling, B. Moon, 2002 .

Inductively coupled plasma etch damage in 4H−SiC investigated by Schottky diode characterization

C. Zetterling, M. Östling, E. Danielsson, 2001 .

Schottky barrier height dependence on the metal work function for p-type 4H-silicon carbide

C. Zetterling, M. Östling, S. Lee, 2001 .

The formation and characterization of epitaxial titanium carbide contacts to 4H-SiC

C. Zetterling, U. Jansson, M. Östling, 2000 .

Temperature stability of cobalt Schottky contacts on n- and p-type 6H silicon carbide

C. Zetterling, M. Östling, N. Lundberg, 1993 .

Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H–silicon carbide

C. Zetterling, U. Jansson, M. Östling, 2000 .

Low resistivity ohmic titanium carbide contacts to n- and p-type 4H-silicon carbide

C. Zetterling, U. Jansson, M. Östling, 2000 .

Titanium tungsten (TiW) for Ohmic contacts to n-and p-type 4H-SiC

C. Zetterling, M. Östling, S. Lee, 2000 .

High Temperature Stable Titanium Carbide Ohmic and Schottky Contacts to SiC

C. Zetterling, L. Norin, U. Jansson, 1998 .

A Wafer-Scale Ni-Salicide Contact Technology on n-Type 4H-SiC

C. Zetterling, M. Östling, M. Ekström, 2017 .

Simulation study of on-state losses as function of carrier life-time for a GaN/SiC high power HBT design

C. Zetterling, M. Östling, B. Breitholtz, 1999 .

Comparison of Thermal Gate Oxides on Silicon and Carbon Face P-Type 6H Silicon Carbide

C. Zetterling, M. Östling, 1994 .

Thermal oxidation of n- and p-type 6H-silicon carbide

C. Zetterling, M. Östling, 1994 .

Comparison Of F 2 Plasma Chemistries For Deep Etching Of SiC

C. Zetterling, F. Ren, S. Pearton, 2000 .

A Comprehensive Study on the Geometrical Effects in High-Power 4H–SiC BJTs

C. Zetterling, M. Östling, H. Elahipanah, 2017, IEEE Transactions on Electron Devices.

Low-Forward-Voltage-Drop 4H-SiC BJTs Without Base Contact Implantation

C. Zetterling, M. Ostling, M. Domeij, 2008, IEEE Transactions on Electron Devices.

SiC Device Technologies

C. Zetterling, S. Koo, M. Östling, 2005 .

A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer

C. Zetterling, M. Östling, M. Domeij, 2005 .

Material aspects of wide temperature range amplifier design in SiC bipolar technologies

C. Zetterling, R. Hedayati, 2016 .

Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide

C. Zetterling, S. Khartsev, M. Östling, 2017, Journal of Electronic Materials.

Ferroelectric Pb(Zr0.52Ti0.48)/SiC field-effect transistor

A. Grishin, C. Zetterling, S. Khartsev, 2003 .

Venus Long-life Surface Package

C. Zetterling, Colin F. Wilson, W. Pike, 2016, 1611.03365.

Single-step synthesis process of Ti3SiC2 ohmic contacts on 4H-SiC by sputter-deposition of Ti

A. Spetz, M. Andersson, C. Zetterling, 2015 .

Process technology for silicon carbide devices

Carl-Mikael Zetterling, C. Zetterling, 2002 .

Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide

A. Spetz, C. Zetterling, L. Hultman, 2011 .

Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)

C. Zetterling, Jun Lu, L. Hultman, 2012 .

Numerical Simulation Model Development and Comparative Analysis of Low-voltage SiC BJT for Compact Modeling

Md Maksudul Hossain, C. Zetterling, A. Mantooth, 2019, 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in NF3 chemistries

J. J. Wang, C. Zetterling, F. Ren, 1998 .

High density plasma via hole etching in SiC

C. Zetterling, F. Ren, S. Pearton, 2001 .

Effects of 3-MeV Protons on 4H-SiC Bipolar Devices and Integrated OR-NOR Gates

L. Lanni, A. Hallén, C. Zetterling, 2013, IEEE Transactions on Nuclear Science.

Ultradeep, low-damage dry etching of SiC

C. Zetterling, F. Ren, S. Pearton, 2000 .

High rate etching of SiC and SiCN in NF3 inductively coupled plasmas

J. J. Wang, C. Zetterling, F. Ren, 1998 .

Surface-Passivation Effects on the Performance of 4H-SiC BJTs

Jisheng Han, S Dimitrijev, S. Dimitrijev, 2011, IEEE Transactions on Electron Devices.

Junction barrier Schottky diodes in 6H SiC

C. Zetterling, F. Dahlquist, M. Östling, 1998 .

Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC

Mikael Östling, Fanny Dahlquist, K. Rottner, 1997 .

Comparison of SiO2 and AIN as Gate Dielectric for SiC MOS Structures

C. Zetterling, M. Östling, M. Spencer, 1997 .

Investigation of aluminum nitride grown by metal–organic chemical-vapor deposition on silicon carbide

S. Wong, C. Zetterling, M. Östling, 1997 .

Influence of growth conditions on electrical characteristics of AlN on SiC

C. Zetterling, M. Östling, N. Nordell, 1997 .

A novel UMOS capacitor test structure for SiC devices

C. Zetterling, M. Östling, 1996 .

Silicon dioxide and aluminium nitride as gate dielectric for high temperature and high power silicon carbide MOSFETs

C. Zetterling, 1997 .

Formation and high frequency CV-measurements of aluminum/aluminum nitride/6H silicon carbide structures

S. Wong, C. Zetterling, M. Östling, 1996 .

A Fully Integrated Silicon-Carbide Sigma–Delta Modulator Operating up to 500 °C

Ye Tian, Carl-Mikael Zetterling, C. Zetterling, 2017, IEEE Transactions on Electron Devices.

Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes

Carl-Mikael Zetterling, Arash Salemi, Hossein Elahipanah, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Investigation of the Breakdown Voltage in High Voltage 4H-SiC BJT with Respect to Oxide and Interface Charges

C. Zetterling, M. Östling, H. Elahipanah, 2015 .

Advanced oxidation process combining oxide deposition and short postoxidation step for N-type 3C- and 4H-SiC

C. Zetterling, S. Reshanov, A. Schöner, 2009 .

Comparative study of thermally grown oxides on n-type free standing 3C-SiC (001)

C. Zetterling, S. Reshanov, A. Schöner, 2009 .

Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors

Carl-Mikael Zetterling, Mikael Östling, Hyung-Seok Lee, 2008 .

Low-Parasitic-Capacitance Self-Aligned 4H-SiC nMOSFETs for Harsh Environment Electronics

S. Kuroki, T. Ohshima, T. Makino, 2017, Materials Science Forum.

Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs

S. Kuroki, T. Ohshima, T. Makino, 2019, Materials Science Forum.

4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters

S. Kuroki, T. Ohshima, T. Makino, 2019, Materials Science Forum.

High-Temperature Recessed Channel SiC CMOS Inverters and Ring Oscillators

C. Zetterling, B. Malm, M. Ekström, 2019, IEEE Electron Device Letters.

4H-SiC nMOSFETs with As-Doped S/D and NbNi Silicide Ohmic Contacts

T. Kikkawa, S. Kuroki, C. Zetterling, 2016 .

Characterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray Radiation

T. Kikkawa, S. Kuroki, T. Ohshima, 2016 .

500$^{\circ}{\rm C}$ Bipolar Integrated OR/NOR Gate in 4H-SiC

Carl-Mikael Zetterling, Bengt Gunnar Malm, Mikael Ostling, 2013, IEEE Electron Device Letters.

4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics

T. Kikkawa, S. Kuroki, T. Ohshima, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

4H-SiC pMOSFETs with Al-Doped S/D and NbNi Silicide Ohmic Contacts

S. Kuroki, T. Ohshima, T. Makino, 2016, Materials Science Forum.

SiC power bipolar junction transistors - modeling and improvement of the current gain

M. Ostling, M. Domeij, C.-M. Zetterling, 2005, 2005 European Conference on Power Electronics and Applications.

500 $^\circ$C SiC PWM Integrated Circuit

C. Zetterling, S. Saggini, D. Senesky, 2019, IEEE Transactions on Power Electronics.

Scaling and Modeling of High Temperature 4H-SiC p-i-n Photodiodes

C. Zetterling, M. Östling, P. Hellström, 2018, IEEE Journal of the Electron Devices Society.

A 500 °C 8-b Digital-to-Analog Converter in Silicon Carbide Bipolar Technology

L. Lanni, C. Zetterling, B. Malm, 2016, IEEE Transactions on Electron Devices.

A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology

Saul Rodriguez, Carl-Mikael Zetterling, Ana Rusu, 2014, IEEE Electron Device Letters.

Bipolar Integrated OR-NOR Gate in 4H-SiC

Carl-Mikael Zetterling, Mikael Östling, Bengt Gunnar Malm, 2012 .

Ferroelectric thin films on silicon carbide for next-generation nonvolatile memory and sensor devices

A. Grishin, C. Zetterling, S. Khartsev, 2004 .

Multifunction integration of junction-MOSFETs and nonvolatile FETs on a single 4H-SiC substrate for 300/spl deg/C operation

A. Grishin, C. Zetterling, S. Khartsev, 2003, IEEE International Electron Devices Meeting 2003.

Towards Ferroelectric Field Effect Transistors in 4H-Silicon Carbide

A. Grishin, C. Zetterling, S. Khartsev, 2002 .

A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C

C. Zetterling, B. Malm, M. Östling, 2020, IEEE Journal of the Electron Devices Society.

555-Timer and Comparators Operational at 500 °C

H. Mantooth, C. Zetterling, A. Rashid, 2019, IEEE Transactions on Electron Devices.

A 4H-SiC BJT as a Switch for On-Chip Integrated UV Photodiode

C. Zetterling, M. Östling, P. Hellström, 2019, IEEE Electron Device Letters.

Present and future applications of Silicon Carbide devices and circuits

Carl-Mikael Zetterling, C. Zetterling, 2012, Proceedings of the IEEE 2012 Custom Integrated Circuits Conference.

A 4H-SiC Bipolar Technology for High-temperature Integrated Circuits

L. Lanni, C. Zetterling, B. Malm, 2013 .

Reduction of the Schottky barrier height on silicon carbide using Au nano-particles

C. Zetterling, L. Wernersson, I. Åberg, 2002 .

Fabrication and Design of 10 kV PiN Diodes Using On-Axis 4H-SiC

A. Hallén, C. Zetterling, M. Östling, 2014 .

Plasma chemistries for high density plasma etching of SiC

C. Zetterling, L. Lester, M. Östling, 1999 .

SiC MISFETs with MBE-grown AlN Gate Dielectric

C. Zetterling, H. Matsunami, T. Kimoto, 2000 .

Structural and electrical characteristics of oxygen-implanted 6H-SiC

C. Zetterling, Zhitang Song, Chenglu Lin, 2000 .

Thermally grown and deposited dielectrics on SiC

C. Zetterling, E. Sveinbjörnsson, 2002 .

Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications

Carl-Mikael Zetterling, Muhammad Shakir, Mikael Östling, 2019, Electronics.

Via-hole etching for SiC

C. Zetterling, S. Pearton, M. Östling, 1999 .

500°C SiC-based driver IC for SiC power MOSFETs

C. Zetterling, D. Senesky, H. Elahipanah, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC

C. Zetterling, S. Reshanov, A. Schöner, 2010 .

Geometrical effects in high current gain 1100-V 4H-SiC BJTs

M. Ostling, E. Danielsson, M. Domeij, 2005, IEEE Electron Device Letters.

Influence of Passivation Oxide Thickness and Device Layout on the Current Gain of SiC BJTs

Carl-Mikael Zetterling, Bengt Gunnar Malm, Mikael Ostling, 2015, IEEE Electron Device Letters.

Modeling and Characterization of Current Gain Versus Temperature in 4H-SiC Power BJTs

R. Ghandi, M. Ostling, M. Domeij, 2010, IEEE Transactions on Electron Devices.

1200-V 5.2-$\hbox{m}\Omega\cdot\hbox{cm}^{2}$ 4H-SiC BJTs With a High Common-Emitter Current Gain

Hyung-Seok Lee, M. Ostling, M. Domeij, 2007, IEEE Electron Device Letters.

Influence of Emitter Width and Emitter–Base Distance on the Current Gain in 4H-SiC Power BJTs

Carl-Mikael Zetterling, Bengt Gunnar Malm, Reza Ghandi, 2010, IEEE Transactions on Electron Devices.

High-Current-Gain SiC BJTs With Regrown Extrinsic Base and Etched JTE

R. Ghandi, Hyung-Seok Lee, M. Ostling, 2008, IEEE Transactions on Electron Devices.

Removal of Crystal Orientation Effects on the Current Gain of 4H-SiC BJTs Using Surface Passivation

C. Zetterling, M. Östling, M. Domeij, 2011, IEEE Electron Device Letters.

ICP etching of SiC

Carl-Mikael Zetterling, Mikael Östling, Stephen J. Pearton, 1998 .

Modeling and Characterization of the on-Resistance in 4H-SiC Power BJTs

Carl-Mikael Zetterling, C. Zetterling, B. Malm, 2011, IEEE Transactions on Electron Devices.

Local Anodic Oxidation of Phosporous-Implanted 4H-SiC by Atomic Force Microscopy

A. Hallén, C. Zetterling, S. Koo, 2012 .

Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs

S. Dimitrijev, C. Zetterling, M. Östling, 2010 .

Fabrication of 2700-V 12-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ Non Ion-Implanted 4H-SiC BJTs With Common-Emitter Current Gain of 50

R. Ghandi, Hyung-Seok Lee, M. Ostling, 2008, IEEE Electron Device Letters.

SiC device technology for high voltage and RF power applications

M. Ostling, S.-K. Lee, S.-M. Koo, 2002, 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595).

Characterization of heterojunction diodes with hydride vapor phase epitaxy grown AlGaN on 4H–SiC

C. Zetterling, M. Östling, V. Dmitriev, 2002 .

Fabrication and characterization of heterojunction diodes with HVPE-grown GaN on 4H-SiC

C. Zetterling, M. Östling, I. Nikitina, 2001 .

Future high temperature applications for SiC integrated circuits

L. Lanni, C. Zetterling, B. Malm, 2012 .

5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension

Carl-Mikael Zetterling, Arash Salemi, Hossein Elahipanah, 2015, IEEE Electron Device Letters.

Area-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT

Carl-Mikael Zetterling, Arash Salemi, Mikael Östling, 2013 .

High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension

R. Ghandi, M. Ostling, M. Domeij, 2009, IEEE Electron Device Letters.

High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension

Carl-Mikael Zetterling, Mikael Östling, Reza Ghandi, 2011 .

SiC bipolar power transistors : Design and technology issues for ultimate performance

A. Hallén, C. Zetterling, M. Östling, 2010 .

Ultrafast Pulsed I-V and Charge Pumping Interface Characterization of Low-Voltage n-Channel SiC MOSFETs

C. Zetterling, B. Malm, M. Ekström, 2019 .

Silicon carbide devices and processes - present status and future pers

M. Ostling, M. Domeij, C.-M. Zetterling, 2006, Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006..

A monolithic SiC drive circuit for SiC Power BJTs

L. Lanni, C. Zetterling, A. Rusu, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Temperature Modeling and Characterization of the Current Gain in 4H-SiC Power BJTs

C. Zetterling, B. Malm, M. Östling, 2010 .

Self-aligned contacts to ion implanted S/D regions in 4H-SiC

C. Zetterling, M. Ekström, 2023, Materials Science in Semiconductor Processing.

CVD-based tungsten carbide schottky contacts to 6H-SiC for very high-temperature operation

C. Zetterling, U. Jansson, M. Östling, 2000 .

Low damage, highly anisotropic dry etching of SiC

C. Zetterling, F. Ren, S. Pearton, 1998, 1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145).

A 600 °C TTL-Based 11-Stage Ring Oscillator in Bipolar Silicon Carbide Technology

C. Zetterling, M. Östling, Shuoben Hou, 2018, IEEE Electron Device Letters.

High frequency characteristic of a monolithic 500 °C OpAmp-RC integrator in SiC bipolar IC technology

Ye Tian, Carl-Mikael Zetterling, C. Zetterling, 2017 .

Ferroelectric Pb(Zr,Ti)O3/Al2O3/4HSiC diode structures

Simon G. M. Koo, A. Grishin, C. Zetterling, 2002 .