M. Florentin

5 MeV proton and 15 MeV electron radiation effects study on 4H-SiC nMOSFET electrical parameters

P. Godignon, M. Alexandru, M. Florentin, 2014 .

Al-implanted on-axis 4H-SiC MOSFETs

P. Godignon, A. Henry, M. Florentin, 2017 .

Rapid Thermal Oxidation of Si-Face N and P-Type On-Axis 4H-SiC

A. Henry, M. Florentin, P. Brosselard, 2014 .

10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical Parameters

M. Alexandru, M. Florentin, A. Constant, 2014 .

High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates

M. Alexandru, M. Florentin, X. Jordà, 2014 .

Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective

M. Florentin, E. Blanco, J. Navas, 2018 .

Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors

P. Godignon, M. Florentin, F. Udrea, 2018, IEEE Transactions on Electron Devices.

Effect of the Growth Conditions on the Properties of Nitrided Oxides Grown by RTP for 4H-SiC p-Channel MOSFETs Fabrication

P. Godignon, M. Florentin, J. Millán, 2012 .

5 MeV proton and 15 MeV electron radiation effects study on 4H-SiC nMOSFET electrical parameters

B. Schmidt, M. Alexandru, P. Godignon, 2014, 2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS).

A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs

Philippe Godignon, Bernd Schmidt, Mihaela Alexandru, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).