F. Pagette

Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology

S. Jeng, B. Jagannathan, M. Khater, 2002, IEEE Electron Device Letters.

SiGe HBTs for millimeter-wave applications with simultaneously optimized f/sub T/ and f/sub max/ of 300 GHz

T. Adam, S. Jeng, B. Jagannathan, 2004, 2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers.

SiGe HBTs with cut-off frequency of 350 GHz

S. Jeng, B. Jagannathan, M. Khater, 2002, Digest. International Electron Devices Meeting,.

Increasing threshold voltage variation due to random telegraph noise in FETs as gate lengths scale to 20 nm

D. Frank, W. Haensch, M. Rooks, 2006, 2009 Symposium on VLSI Technology.

SiGe HBT technology with f/sub max//f/sub T/=350/300 GHz and gate delay below 3.3 ps

T. Adam, S. Jeng, M. Khater, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz

David R. Greenberg, Basanth Jagannathan, Andreas D. Stricker, 2004, RFIC 2004.

Extendibility of NiPt silicide to the 22-nm node CMOS technology

Anna W. Topol, K. Ohuchi, V. Narayanan, 2008, Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08).

Extendibility of NiPt Silicide Contacts for CMOS Technology Demonstrated to the 22-nm Node

Anna W. Topol, M. Khare, C. Lavoie, 2007, 2007 IEEE International Electron Devices Meeting.

Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance

S. Jeng, B. Jagannathan, M. Khater, 2002, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.

Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

W. Haensch, C. Lavoie, J. Newbury, 2010, IEEE Electron Device Letters.