D. Greenberg

发表

Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology

S. Jeng, B. Jagannathan, M. Khater, 2002, IEEE Electron Device Letters.

SiGe HBTs for millimeter-wave applications with simultaneously optimized f/sub T/ and f/sub max/ of 300 GHz

T. Adam, S. Jeng, B. Jagannathan, 2004, 2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers.

0.13 /spl mu/m 210 GHz f/sub T/ SiGe HBTs - expanding the horizons of SiGe BiCMOS

D. Greenberg, R. Groves, G. Freeman, 2002, 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315).

Structural dependence of the thermal resistance of trench-isolated bipolar transistors

J. Rieh, D. Greenberg, J. Johnson, 2002, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.

A SiGe HBT BiCMOS technology for mixed signal RF applications

S. Jeng, S. Wu, D. Greenberg, 1997, Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting.

Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors

B. Jagannathan, J. Rieh, D. Greenberg, 2001, 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496).

SiGe HBTs with cut-off frequency of 350 GHz

S. Jeng, B. Jagannathan, M. Khater, 2002, Digest. International Electron Devices Meeting,.

Nonlinear source and drain resistance in recessed-gate heterostructure field-effect transistors

D. Greenberg, J. Alamo, 1996 .

RF characterization and parameter extraction for CMOS device models

Basanth Jagannathan, Jing Wang, L. Wagner, 2007, 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications

D. Harame, B. Jagannathan, A. Rylyakov, 2004, IEEE Transactions on Microwave Theory and Techniques.

RF CMOS for microwave and mm-wave applications

B. Jagannathan, L. Wagner, D. Goren, 2006, Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

INTEGRATED SiGe AND Si DEVICE CAPABILITIES AND TRENDS FOR MULTI-GIGAHERTZ APPLICATIONS

S. Koester, B. Jagannathan, D. Greenberg, 2003 .

SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz

David R. Greenberg, Basanth Jagannathan, Andreas D. Stricker, 2004, RFIC 2004.

A doping concentration-dependent upper limit of the breakdown voltage–cutoff frequency product in Si bipolar transistors

David R. Greenberg, Basanth Jagannathan, Jae-Sung Rieh, 2004 .

Transistor bipolaire au silicium-germanium

D. Greenberg, K. Schonenberg, D. Harame, 2001 .

Foundation of rf CMOS and SiGe BiCMOS technologies

James S. Dunn, David R. Greenberg, Bernard S. Meyerson, 2003, IBM J. Res. Dev..

A recessed-gate InAlAs/n/sup +/-InP HFET with an InP etch-stop layer

D. Greenberg, J. D. del Alamo, R. Bhat, 1992, IEEE Electron Device Letters.

The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor

David R. Greenberg, D. Greenberg, 1995 .

A pseudomorphic AlGaAs/n/sup +/-InGaAs metal-insulator-doped channel FET for broad-band, large-signal applications

D. Greenberg, J. D. del Alamo, J. Harbison, 1991, IEEE Electron Device Letters.

A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure

H. Chen, B. Jagannathan, J. Johnson, 2001, IEEE Electron Device Letters.

Technology Scaling and Device Design for 350 GHz RF Performance in a 45nm Bulk CMOS Process

B. Jagannathan, Jing Wang, Yun Shi, 2007, 2007 IEEE Symposium on VLSI Technology.

Noise performance scaling in high-speed silicon RF technologies

B. Jagannathan, D. Greenberg, D. Ahlgren, 2003, 2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers..

Scaling of SiGe Heterojunction Bipolar Transistors

David R. Greenberg, Jae-Sung Rieh, Gregory Freeman, 2005, Proceedings of the IEEE.

Enabling RFCMOS solutions for emerging advanced applications

B. Jagannathan, P.E. Cottrell, Xudong Wang, 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.

Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace

D.L. Harame, J. Malinowski, D. Sunderland, 1996, International Electron Devices Meeting. Technical Digest.

The revolution in SiGe: Impact on device electronics

Alvin J. Joseph, James S. Dunn, David R. Greenberg, 2004 .

Structure optimization of trench-isolated SiGe HBTs for simultaneous improvements in thermal and electrical performances

G. Freeman, D. Greenberg, D. Greenberg, 2005, IEEE Transactions on Electron Devices.

Impact Ionization and Transport in the InAlAs / n +-InP HFET

D. Greenberg, 2004 .

Velocity saturation in the extrinsic device: a fundamental limit in HFET's

J. A. del Alamo, D. R. Greenberg, D. Greenberg, 1994 .

The Impact of the Extrinsic Device on HFET Performance

D. Greenberg, J. Alamo, 1991 .

Noise performance of a low base resistance 200 GHz SiGe technology

B. Jagannathan, S. Sweeney, D.R. Greenberg, 2002, Digest. International Electron Devices Meeting,.

Modeling frequency response of 65 nm CMOS RF power devices

D. Greenberg, U. Gogineni, C. Putnam, 2010 .

The impact of electron transport regimes on the linearity of AlGaAs/n+-InGaAs HFETs

D. Greenberg, J. Alamo, 1993 .