G. Freeman

发表

Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology

S. Jeng, B. Jagannathan, M. Khater, 2002, IEEE Electron Device Letters.

The effects of proton irradiation on the lateral and vertical scaling of UHV/CVD SiGe HBT BiCMOS technology

P. Marshall, C. Marshall, G. Freeman, 2000 .

A 0.18 /spl mu/m BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

B. Jagannathan, R. Groves, J. Johnson, 2001, Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212).

Proton tolerance of fourth-generation 350 GHz UHV/CVD SiGe HBTs

Wei-Min Lance Kuo, R. Reed, P. Marshall, 2004, IEEE Transactions on Nuclear Science.

SiGe HBTs for millimeter-wave applications with simultaneously optimized f/sub T/ and f/sub max/ of 300 GHz

T. Adam, S. Jeng, B. Jagannathan, 2004, 2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers.

Total Dose Tolerance of Monolithic Millimeter-Wave Transceiver Building Blocks Implemented in 200 GHz SiGe Technology

J. Cressler, G. Freeman, B. Haugerud, 2004 .

0.13 /spl mu/m 210 GHz f/sub T/ SiGe HBTs - expanding the horizons of SiGe BiCMOS

D. Greenberg, R. Groves, G. Freeman, 2002, 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315).

An investigation of the damage mechanisms in impact ionization-induced "mixed-mode" reliability stressing of scaled SiGe HBTs

J. Cressler, J. Rieh, D. Ahlgren, 2003, IEEE International Electron Devices Meeting 2003.

Cryogenic performance of a 200 GHz SiGe HBT technology

J. Laskar, J. Cressler, D. Ahlgren, 2003, 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440).

Proton tolerance of third-generation, 0.12 /spl mu/m 185 GHz SiGe HBTs

R. Reed, P. Marshall, J. Cressler, 2003 .

A New Negative-Differential-Resistance Effect in 350 GHz SiGe HBTs Operating at Cryogenic Temperatures

J. Cressler, J. Rieh, D. Ahlgren, 2005, 2005 International Semiconductor Device Research Symposium.

Cryogenic operation of third-generation, 200-GHz peak-f/sub T/, silicon-germanium heterojunction bipolar transistors

Chang-Ho Lee, Qingqing Liang, J. Laskar, 2005, IEEE Transactions on Electron Devices.

Structural dependence of the thermal resistance of trench-isolated bipolar transistors

J. Rieh, D. Greenberg, J. Johnson, 2002, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.

Reliability of high-speed SiGe heterojunction bipolar transistors under very high forward current density

J. Rieh, G. Freeman, S. Subbanna, 2003 .

Proton radiation response of monolithic Millimeter-wave transceiver building blocks implemented in 200 GHz SiGe technology

Wei-Min Lance Kuo, R. Reed, P. Marshall, 2004, IEEE Transactions on Nuclear Science.

Analysis and understanding of unique cryogenic phenomena in state-of-the-art SiGe HBTs

J. Cressler, J. Rieh, D. Ahlgren, 2006 .

A SiGe HBT BiCMOS technology for mixed signal RF applications

S. Jeng, S. Wu, D. Greenberg, 1997, Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting.

Proton Response of 4th-Generation 350 GHz UHV/CVD SiGe HBTs

R. Reed, J. Rieh, D. Ahlgren, 2004 .

Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors

B. Jagannathan, J. Rieh, D. Greenberg, 2001, 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496).

SiGe HBTs with cut-off frequency of 350 GHz

S. Jeng, B. Jagannathan, M. Khater, 2002, Digest. International Electron Devices Meeting,.

A simple 4-port parasitic de-embedding methodology for high-frequency characterization of SiGe HBTs

J. Cressler, D. Ahlgren, G. Freeman, 2003, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003.

22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL

S. Narasimha, K. Onishi, J. Johnson, 2012, 2012 International Electron Devices Meeting.

SiGe HBT technology with f/sub max//f/sub T/=350/300 GHz and gate delay below 3.3 ps

T. Adam, S. Jeng, M. Khater, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Performance-optimized gate-first 22-nm SOI technology with embedded DRAM

G. Freeman, Shreesh Narasimha, James P. Norum, 2015, IBM J. Res. Dev..

SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications

D. Harame, B. Jagannathan, A. Rylyakov, 2004, IEEE Transactions on Microwave Theory and Techniques.

Impact of Proton Irradiation on the RF Performance of 65 nm SOI CMOS Technology

P. Marshall, J. Cressler, G. Freeman, 2009, IEEE Transactions on Nuclear Science.

The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of 65 nm RF-CMOS on SOI

Qingqing Liang, G. Freeman, R. Arora, 2009, IEEE Transactions on Nuclear Science.

Impact of proton irradiation on the RF performance of 65 nm SOI CMOS technology

P. Marshall, J. Cressler, G. Freeman, 2008, 2008 European Conference on Radiation and Its Effects on Components and Systems.

Performance of V-Band On-Chip Antennas in GlobalFoundries 45nm CMOS SOI Process for Mm-Wave 5G Applications

G. Freeman, D. Harame, T. Chi, 2018, 2018 IEEE/MTT-S International Microwave Symposium - IMS.

A low power Ka-band SiGe HBT VCO using line inductors

J. Laskar, J. Cressler, G. Freeman, 2004, Radio Frequency Integrated Circuits Symposium.

A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT

S. Jeng, B. Rainey, J. Rieh, 2003 .

INTEGRATED SiGe AND Si DEVICE CAPABILITIES AND TRENDS FOR MULTI-GIGAHERTZ APPLICATIONS

S. Koester, B. Jagannathan, D. Greenberg, 2003 .

A highly rugged 19 dBm 28GHz PA using novel PAFET device in 45RFSOI technology achieving peak efficiency above 48%

D. Lederer, G. Freeman, Arvind Kumar, 2020, 2020 IEEE/MTT-S International Microwave Symposium (IMS).

Performance and design considerations for high speed SiGe HBTs of f/sub T//f/sub max/=375 GHz/210 GHz

Basanth Jagannathan, Jae-Sung Rieh, David C. Ahlgren, 2003, International Conference onIndium Phosphide and Related Materials, 2003..

SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz

David R. Greenberg, Basanth Jagannathan, Andreas D. Stricker, 2004, RFIC 2004.

A doping concentration-dependent upper limit of the breakdown voltage–cutoff frequency product in Si bipolar transistors

David R. Greenberg, Basanth Jagannathan, Jae-Sung Rieh, 2004 .

Optimizing History Effects in 65nm PD-SOI CMOS

E. Leobandung, G. Freeman, M.M. Pelella, 2006, 2006 IEEE international SOI Conferencee Proceedings.

3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delay

B. Jagannathan, M. Meghelli, G. Freeman, 2003, IEEE Electron Device Letters.

The effects of geometrical scaling on the frequency response and noise performance of SiGe HBTs

Alvin J. Joseph, John D. Cressler, David L. Harame, 2002 .

The effects of geometrical scaling on the RF performance of SiGe HBTs

Guofu Niu, G. Freeman, A. Joseph, 2000, 2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.00EX397).

Current status and future trends of SiGe BiCMOS technology

Alvin J. Joseph, James S. Dunn, David L. Harame, 2001 .

A 4.2-ps ECL ring-oscillator in a 285-GHz f/sub MAX/ SiGe technology

B. Jagannathan, M. Meghelli, S. Subbanna, 2002, IEEE Electron Device Letters.

Foundation of rf CMOS and SiGe BiCMOS technologies

James S. Dunn, David R. Greenberg, Bernard S. Meyerson, 2003, IBM J. Res. Dev..

Trends in silicon germanium BiCMOS integration and reliability

D. Ahlgren, G. Freeman, S. Subbanna, 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).

SiGe HBT performance and reliability trends through f/sub T/ of 350 GHz

Alvin J. Joseph, Basanth Jagannathan, Jae-Sung Rieh, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

High-performance silicon-germanium technology

D. Harame, G. Freeman, S. Subbanna, 2005, 63rd Device Research Conference Digest, 2005. DRC '05..

Effects of emitter scaling and device biasing on millimeter-wave VCO performance in 200 GHz SiGe HBT technology

J. Cressler, G. Freeman, W. Kuo, 2005, 2005 Asia-Pacific Microwave Conference Proceedings.

Toward RF System-Level Integration: Process Integration Issues in Sige BICMOS

S. Jeng, K. Schonenberg, D. Ahlgren, 1998 .

Effective Drive Current in CMOS Inverters for Sub-45nm Technologies

Richard A. Wachnik, Greg Freeman, Philip Wong, 2008 .

A millimeter-wave linear low noise amplifier in sige HBT technology with substrate parasitic model

J.D. Cressler, A. Joseph, J. Laskar, 2004, 34th European Microwave Conference, 2004..

Transistor design and application considerations for >200-GHz SiGe HBTs

Basanth Jagannathan, Andreas D. Stricker, Jae-Sung Rieh, 2003 .

A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure

H. Chen, B. Jagannathan, J. Johnson, 2001, IEEE Electron Device Letters.

A low-power ka-band Voltage-controlled oscillator implemented in 200-GHz SiGe HBT technology

J. Laskar, J.D. Cressler, Y.V. Tretiakov, 2005, IEEE Transactions on Microwave Theory and Techniques.

High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell

D. Mocuta, C. Norris, C. Radens, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Noise performance scaling in high-speed silicon RF technologies

B. Jagannathan, D. Greenberg, D. Ahlgren, 2003, 2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers..

Scaling of SiGe Heterojunction Bipolar Transistors

David R. Greenberg, Jae-Sung Rieh, Gregory Freeman, 2005, Proceedings of the IEEE.

Trade-Offs Between RF Performance and Total-Dose Tolerance in 45-nm RF-CMOS

En Xia Zhang, J. D. Cressler, R. D. Schrimpf, 2011, IEEE Transactions on Nuclear Science.

Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace

D.L. Harame, J. Malinowski, D. Sunderland, 1996, International Electron Devices Meeting. Technical Digest.

The revolution in SiGe: Impact on device electronics

Alvin J. Joseph, James S. Dunn, David R. Greenberg, 2004 .

Structure optimization of trench-isolated SiGe HBTs for simultaneous improvements in thermal and electrical performances

G. Freeman, D. Greenberg, D. Greenberg, 2005, IEEE Transactions on Electron Devices.

Record RF performance of 45-nm SOI CMOS Technology

B. Jagannathan, Jonghae Kim, Sungjae Lee, 2007, 2007 IEEE International Electron Devices Meeting.

Half-terahertz operation of SiGe HBTs

R. Krithivasan, G. Freeman, D. Ahlgren, 2006, IEEE Electron Device Letters.

Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance

S. Jeng, B. Jagannathan, M. Khater, 2002, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.

Novel mmWave NMOS Device for High Pout mmWave Power Amplifiers in 45RFSOI

Sudesh Saroop, Dimitri Lederer, P. Srinivasan, 2021, ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC).

45nm PD SOI FET gate resistance optimization for mmw applications

D. Lederer, G. Freeman, S. Jain, 2018, 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Noise performance of a low base resistance 200 GHz SiGe technology

B. Jagannathan, S. Sweeney, D.R. Greenberg, 2002, Digest. International Electron Devices Meeting,.