G. Niu

J. Cressler, G. Niu, W. Ansley, 1998, 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.98EX271).

Input non-quasi-static effect in SiGe HBTs and its impact on noise modeling

D. Sheridan, G. Niu, S. Sweeney, 2005, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005..

Characterization and profile optimization of SiGe pFETs on silicon-on-sapphire

John D. Cressler, Guofu Niu, S. J. Mathew, 1999 .

Single Event Upset Mechanisms for Low-Energy-Deposition Events in SiGe HBTs

G. Espinel, G. Vizkelethy, J.P. Comeau, 2008, IEEE Transactions on Nuclear Science.

A Generalized SiGe HBT Single-Event Effects Model for On-Orbit Event Rate Calculations

R. Krithivasan, M.A. Carts, peixiong zhao, 2007, IEEE Transactions on Nuclear Science.

Impact of Collector-Base Space Charge Region on RF Noise in Bipolar Transistors

G. Niu, K. Xia, 2006, 2006 Bipolar/BiCMOS Circuits and Technology Meeting.

Systematic analysis of RF distortion in SiGe HBT's

J. Cressler, G. Niu, D. Harame, 2001, 2001 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium (IEEE Cat. No.01CH37173).

Anomalous radiation effects in fully depleted SOI MOSFETs fabricated on SIMOX

R. Reed, P. Marshall, C. Marshall, 2001 .

Modeling of temperature dependent IC-VBE characteristics of SiGe HBTs from 43–400K

Ziyan Xu, Guofu Niu, J. Cressler, 2008, 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

Design of a 250-Gbit/s SiGe HBT Electrooptic Modulator

Z. R. Huang, J. McDonald, J. Cressler, 2011, IEEE Photonics Journal.

Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGe HBTs

S. Clark, J. Cressler, Shiming Zhang, 2001 .

Noise and linearity optimization in SiGe HBT RF technology

G. Niu, 2001, 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).

Hole confinement and its impact on low-frequency noise in SiGe pFETs on sapphire

J. Cressler, G. Niu, B. Meyerson, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Impact of non-Conducting RF and DC Hot Carrier Stresses on FinFET Reliability for RF Power Amplifiers

G. Niu, X. Ding, H. Zhang, 2022, 2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).

Design and Characterization of 2.5kV 4H-SiC JBS Rectifiers with Self-Aligned Guard Ring Termination

S. Saddow, D. Sheridan, J. Cressler, 2001 .

Design of single and multiple zone junction termination extension structures for SiC power devices

John D. Cressler, Guofu Niu, David C. Sheridan, 2001 .

Design and fabrication of planar guard ring termination for high-voltage SiC diodes

John D. Cressler, David C. Sheridan, Charles D. Ellis, 2000 .

Integration of selectively implanted collector (SIC) of SiGe:C HBT for optimised performance and manufacturability

G. Niu, B. Brown, D. Hammock, 2003, 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440).

Noise in SiGe HBT RF Technology: Physics, Modeling, and Circuit Implications

Guofu Niu, G. Niu, 2005, Proceedings of the IEEE.

An investigation of proton energy effects in SiGe HBT technology

John D. Cressler, Paul W. Marshall, Robert A. Reed, 2002 .

Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's

John D. Cressler, David C. Ahlgren, U. Gogineni, 1999 .

Photo effect based avalanche multiplication measurement in highly scaled SiGe HBTs

G. Niu, A. Joseph, D. Harame, 2003, 2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers..

Proton radiation effects in 0.35 /spl mu/m partially depleted SOI MOSFETs fabricated on UNIBOND

John D. Cressler, Ying Li, Paul W. Marshall, 2002 .

3-D Simulation of SEU Hardening of SiGe HBTs Using Shared Dummy Collector

Guofu Niu, R. Reed, P. Marshall, 2007, IEEE Transactions on Nuclear Science.

A Novel Circuit-Level SEU Hardening Technique for High-Speed SiGe HBT Logic Circuits

J.D. Cressler, A.K. Sutton, P.W. Marshall, 2007, IEEE Transactions on Nuclear Science.

An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs

M. Turowski, A. Raman, G. Vizkelethy, 2007, IEEE Transactions on Nuclear Science.

Proton-induced SEU in SiGe digital logic at cryogenic temperatures

M.A. Carts, Guofu Niu, R. Reed, 2007, 2007 International Semiconductor Device Research Symposium.

Application of RHBD Techniques to SEU Hardening of Third-Generation SiGe HBT Logic Circuits

J.D. Cressler, B.A. Randall, B.K. Gilbert, 2006, IEEE Transactions on Nuclear Science.

Substrate Engineering Concepts to Mitigate Charge Collection in Deep Trench Isolation Technologies

G. Espinel, G. Vizkelethy, J.P. Comeau, 2006, IEEE Transactions on Nuclear Science.

An SEU hardening approach for high-speed SiGe HBT digital logic

John D. Cressler, Barry K. Gilbert, Paul W. Marshall, 2003 .

Single event upset test results on a prescaler fabricated in IBM's 5HP silicon germanium heterojunction bipolar transistors BiCMOS technology

John D. Cressler, K. A. LaBel, Paul W. Marshall, 2001, 2001 IEEE Radiation Effects Data Workshop. NSREC 2001. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.01TH8588).

Radiation-induced back-channel leakage in SiGe CMOS on silicon-on-sapphire (SOS) technology

S. Clark, J. Cressler, G. Niu, 1999 .

Noise modeling and SiGe profile design tradeoffs for RF applications [HBTs]

Alvin J. Joseph, John D. Cressler, Lawrence E. Larson, 2000 .

Scaling and technological limitations of 1/f noise and oscillator phase noise in SiGe HBTs

Jin Tang, Zhiming Feng, A.J. Joseph, 2005, IEEE transactions on microwave theory and techniques.

Low-Frequency Noise

Guofu Niu, G. Niu, 2005 .

Physics and Modeling of Noise in SiGe HBT Devices and Circuits

G. Niu, 2005 .

Physics and Modeling of Noise in SiGe HBT Devices and Circuits

G. Niu, Broun Hall, 2005 .

SiGe HBT scaling implications on 1/f noise and oscillator phase noise

G. Niu, A. Joseph, D. Harame, 2004, 2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers.

Low-frequency noise figures-of-merit in RF SiGe HBT technology

J. Cressler, Shiming Zhang, G. Niu, 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

On the optimization and design of SiGe HBT cascode low-noise amplifiers

John D. Cressler, Qingqing Liang, David L. Harame, 2005 .

Modeling of Bandgap Narrowing for Consistent Simulation of SiGe HBTs Across a Wide Temperature Range

J. Cressler, G. Niu, Lan Luo, 2007, 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

Intermodulation linearity characteristics of CMOS transistors in a 0.13 /spl mu/m process

Jun Pan, S.S. Taylor, Guofu Niu, 2005, 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers.

The operation of 0.35 μm partially depleted SOI CMOS technology in extreme environments

John D. Cressler, Ying Li, S. T. Liu, 2003 .

A New Device Phenomenon in Cryogenically-Operated SiGe HBTs

Qingqing Liang, R. Krithivasan, Jiahui Yuan, 2006, 2006 International Electron Devices Meeting.

A physics-based high-injection transit-time model applied to barrier effects in SiGe HBTs

John D. Cressler, Qingqing Liang, David L. Harame, 2002 .

Consistent simulation of bandgap narrowing in SiGe HBTs

J. Cressler, G. Niu, Yun Shi, 2003, 2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers..

Compact Modeling of the Temperature Dependence of Parasitic Resistances in SiGe HBTs Down to 30 K

Guofu Niu, J. Cressler, G. Niu, 2009, IEEE Transactions on Electron Devices.

SiGe profile optimization for low noise using microscopic noise simulation

G. Niu, Yan Cui, 2005, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005..

Impact of profile design and scaling on large signal performance of SiGe HBTs

Jun Pan, Guofu Niu, G. Niu, 2004, Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting.

SiGe HBT design tradeoffs between small signal and large signal RF performance

G. Niu, Jun Pan, 2004, Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..

Noise-gain tradeoff in RF SiGe HBTs

D. Harame, Guofu Niu, Shiming Zhang, 2001, 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496).

Low-frequency noise and phase noise behavior of advanced SiGe HBTs

J. Graffeuil, R. Plana, L. Bary, 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

Transistor noise in SiGe HBT RF technology

Alvin J. Joseph, Mattia Borgarino, Robert Plana, 2000, Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124).

SiGe HBT Technology for RF and Wireless Applications

Guofu Niu, G. Niu, 2004 .

The impact of bandgap offset distribution between conduction and valence bands in Si-based graded bandgap HBT's

J. Cressler, G. Niu, 1999 .

Intermodulation characteristics of UHV/CVD SiGe HBTs

John D. Cressler, W. E. Ansley, Guofu Niu, 1999, Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024).

A comparison of npn and pnp profile design tradeoffs for complementary SiGe HBT Technology

John D. Cressler, Gang Zhang, Angelo Pinto, 2000 .

Hot electron and hot hole degradation of UHV/CVD SiGe HBT's

John D. Cressler, David L. Harame, U. Gogineni, 2000 .

Wide temperature range compact modeling of SiGe HBTs for space applications

John D. Cressler, H. Alan Mantooth, Peng Cheng, 2011, 2011 IEEE 43rd Southeastern Symposium on System Theory.

Temperature Scalable Modeling of SiGe HBT DC Currents Down to 43K

John D. Cressler, Zhiming Feng, Guofu Niu, 2006 .

Comparison of PMOS and NMOS in a 14-nm RF FinFET technology: RF Characteristics and Compact Modeling

G. Niu, W. Cai, K. Imura, 2020, 2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).

Experimental Extraction of Thermal Noise γ Factors in a 14-nm RF FinFET technology

G. Niu, W. Cai, K. Imura, 2021, 2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).

Intermodulation Linearity Characteristics of 14-nm RF FinFETs

G. Niu, Weike Wang, W. Cai, 2019, IEEE Transactions on Electron Devices.

Extraction of Drain Current Thermal Noise in a 28 nm High- ${k}$ /Metal Gate RF CMOS Technology

G. Niu, Q. Liang, Huaiyuan Zhang, 2018, IEEE Transactions on Electron Devices.

On the Excess Noise Factors and Noise Parameter Equations for RF CMOS

Qingqing Liang, Ying Li, S.S. Taylor, 2007, 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

Charge Collection and SEU in SiGe HBT Current Mode Logic Operating at Cryogenic Temperatures

Robert Reed, Ziyan Xu, Guofu Niu, 2010, IEEE Transactions on Nuclear Science.

3-D simulation of heavy-ion induced charge collection in SiGe HBTs

Alvin J. Joseph, John D. Cressler, Paul W. Marshall, 2003 .

Programmable logic gate based on controlled quenching of series-connected negative differential resistance devices

K.J. Chen, T. Waho, K. Maezawa, 1996, 1996 54th Annual Device Research Conference Digest.

Physics and implications of minority carrier injection induced dopant deionization in bipolar transistor

G. Niu, K. Xia, Zhen Li, 2011, 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35 /spl mu/m SiGe BiCMOS technology

John D. Cressler, Gaurab Banerjee, M. J. Palmer, 1999 .