M. Zierak

A 0.18 /spl mu/m BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

B. Jagannathan, R. Groves, J. Johnson, 2001, Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212).

High performance, low complexity 0.18 /spl mu/m SiGe BiCMOS technology for wireless circuit applications

D. Sheridan, D. Coolbaugh, M. Zierak, 2002, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.

A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT

S. Jeng, B. Rainey, J. Rieh, 2003 .

Fully-isolated silicon RF LDMOS for high-efficiency mobile power conversion and RF amplification

M. Zierak, Chaojiang Li, N. Feilchenfeld, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

A 19DBM 5.8GHzz PA demonstrator with a novel low ron high FT RF LDMOS

M. Zierak, H. Ding, Chaojiang Li, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Foundation of rf CMOS and SiGe BiCMOS technologies

James S. Dunn, David R. Greenberg, Bernard S. Meyerson, 2003, IBM J. Res. Dev..

A 120V 180nm High Voltage CMOS smart power technology for system-on-chip integration

K. Chatty, D. Harame, E. Seebacher, 2010, 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Latchup in merged triple well structure

E. Gebreselasie, S. Voldman, S. St Onge, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..