B. Orner

发表

A 0.18 /spl mu/m BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

B. Jagannathan, R. Groves, J. Johnson, 2001, Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212).

High performance, low complexity 0.18 /spl mu/m SiGe BiCMOS technology for wireless circuit applications

D. Sheridan, D. Coolbaugh, M. Zierak, 2002, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.

A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT

S. Jeng, B. Rainey, J. Rieh, 2003 .

Schottky Barrier Diodes for Millimeter Wave SiGe BiCMOS Applications

J.B. Johnson, A. Joseph, B. Orner, 2006, 2006 Bipolar/BiCMOS Circuits and Technology Meeting.

Silicon germanium based millimetre-wave ICs for Gbps wireless communications and radar systems

Janusz Grzyb, Alvin J. Joseph, Scott K. Reynolds, 2006 .

Progress in SiGe Technology Toward Fully Integrated mmWave ICs

B. Gaucher, U. Pfeiffer, E. Mina, 2006, 2006 International SiGe Technology and Device Meeting.

Collector optimization in advanced SiGe HBT technologies

J. Johnson, J. Dunn, Q.Z. Liu, 2005, IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05..

Foundation of rf CMOS and SiGe BiCMOS technologies

James S. Dunn, David R. Greenberg, Bernard S. Meyerson, 2003, IBM J. Res. Dev..

Electrical and optical properties of phosphorus doped Ge1−yCy

Paul R. Berger, B. Orner, R. Wilson, 1998 .

1.3 μm photoresponsivity in Si-based Ge1−xCx photodiodes

Paul R. Berger, B. Orner, S. Rommel, 1998 .

The effects of composition and doping on the response of GeC-Si photodiodes

F. Julien, B. Orner, R. Wilson, 1998 .

A pGe C / nSi Heterojunction Diode Grown by Molecular Beam Epitaxy

P. R. Berger, B. Orner, S. Rommel, 1997 .

Optical absorption in alloys of Si, Ge, C, and Sn

B. Orner, F. Guarín, A. Powell, 1996 .

Optical and electronic properties of SiGeC alloys grown on Si substrates

Paul R. Berger, B. Orner, D. Hits, 1995 .

Optical properties and band structure of Ge1−yCy and Ge-rich Si1−x−yGexCy alloys

B. Orner, D. Hits, M. Dashiell, 1998 .

Ellipsometry Studies, Optical Properties, And Band Structure of Gel. 1- y C y , Ge-RICH Si 1- x-y Ge x C y , And Boron-Doped Si 1- x Ge x Alloys

B. Orner, D. Hits, M. Dashiell, 1998 .

Band gap of Ge rich Si1−x−yGexCy alloys

B. Orner, J. Kolodzey, J. 0. Olowolafe, 1996 .

Optical properties of Ge1-yCy alloys

Paul R. Berger, B. Orner, D. Hits, 1996 .

Growth of germanium‐carbon alloys on silicon substrates by molecular beam epitaxy

B. Orner, J. Kolodzey, S. Shah, 1995 .

STRAIN MODIFICATION IN THIN SI1-X-YGEXCY ALLOYS ON (100) SI FOR FORMATION OF HIGH DENSITY AND UNIFORMLY SIZED QUANTUM DOTS

D. Hits, Paul R. Berger, Xiaoping Shao, 1999 .

Si1−x−yGexCy alloy band structures by linear combination of atomic orbitals

B. Orner, J. Kolodzey, 1997 .

Dielectric response of thick low dislocation‐density Ge epilayers grown on (001) Si

James Kolodzey, Stefan Zollner, M. W. Dashiell, 1996 .

Wideband millimeter wave pin diode spdt switch using ibm 0.13µm sige technology

B. Gaucher, Hanyi Ding, E. Mina, 2007, 2007 European Microwave Integrated Circuit Conference.

Second Generation 60-GHz Transceiver Chipset Supporting Multiple Modulations at Gb/s data rates (Invited)

B. Floyd, S. Reynolds, B. Gaucher, 2007, 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

A p-Ge/sub 1-x/C/sub x//n-Si heterojunction diode grown by molecular beam epitaxy

P. R. Berger, B. Orner, S. Rommel, 1997, IEEE Electron Device Letters.

A p-Ge C /n-Si Heterojunction Diode Grown by Molecular Beam Epitaxy

P. R. Berger, B. Orner, S. Rommel, 1997 .

p–i–n diodes for monolithic millimetre wave BiCMOS applications

B. Gaucher, J. Johnson, D. Sheridan, 2006, 2006 International SiGe Technology and Device Meeting.

Optical constants of B- and P-doped Ge1-yCy alloys on Si substrates

James Kolodzey, Bradley A. Orner, F. Chen, 1997, Photonics West.