P. Gray

A 0.18 /spl mu/m BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

B. Jagannathan, R. Groves, J. Johnson, 2001, Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212).

High performance, low complexity 0.18 /spl mu/m SiGe BiCMOS technology for wireless circuit applications

D. Sheridan, D. Coolbaugh, M. Zierak, 2002, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.

A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT

S. Jeng, B. Rainey, J. Rieh, 2003 .

SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz fT/fMAX through reduced Rb and Ccb parasitics

V. Jain, B. Zetterlund, D. L. Harame, 2013, 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

Investigation of HBT layout impact on fT doubler performance for 90nm SiGe HBTs

J. Pekarik, D. Harame, P. Gray, 2014, 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

Study of mutual and self-thermal resistance in 90nm SiGe HBTs

J. Pekarik, D. Harame, P. Gray, 2013, 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications

S. Reynolds, B. Sadhu, A. Valdes-Garcia, 2014, 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

SiGe HBTs in 90nm BiCMOS Technology Demonstrating fT/fMAX 285GHz/475GHz through Simultaneous Reduction of Base Resistance and Extrinsic Collector Capacitance

Vibhor Jain, D. L. Harame, Marwan H. Khater, 2014 .