H. Yoshida

A 73 GHz f/sub T/ 0.18 /spl mu/m RF-SiGe BiCMOS technology considering thermal budget trade-off and with reduced boron-spike effect on HBT characteristics

T. Hashimoto, F. Sato, T. Aoyama, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

L-C-band low-voltage BiCMOS MMICs for dual-mode cellular-LAN applications

Mohammad Madihian, Y. Kinoshita, K. Imai, 1996 .

A 1-10 GHz 0.18/spl mu/m-CMOS chipset for multi-mode wireless applications

H. Suzuki, H. Yoshida, H. Fujii, 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

A Premetal BPSG Filled Deep Trench Isolation Technology for ECL-BiCMOS LSIs using CMP

Mohammad Madihian, Kiyotaka Imai, Tohru Yamazaki, 1995, ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference.

A 0.18-/spl mu/m RF SiGe BiCMOS technology with collector-epi-free double-poly self-aligned HBTs

T. Hashimoto, F. Sato, H. Suzuki, 2003 .

A BiCMOS 300 ns attack-time AGC amplifier with peak-detect-and-hold feature for high-speed wireless ATM systems

H. Suzuki, T. Yamazaki, M. Madihian, 1999, 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278).