H. Fujii

A 73 GHz f/sub T/ 0.18 /spl mu/m RF-SiGe BiCMOS technology considering thermal budget trade-off and with reduced boron-spike effect on HBT characteristics

T. Hashimoto, F. Sato, T. Aoyama, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

A 1-10 GHz 0.18/spl mu/m-CMOS chipset for multi-mode wireless applications

H. Suzuki, H. Yoshida, H. Fujii, 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

A 0.18-/spl mu/m RF SiGe BiCMOS technology with collector-epi-free double-poly self-aligned HBTs

T. Hashimoto, F. Sato, H. Suzuki, 2003 .