D. Sanderson

SiGe HBTs for millimeter-wave applications with simultaneously optimized f/sub T/ and f/sub max/ of 300 GHz

T. Adam, S. Jeng, B. Jagannathan, 2004, 2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers.

SiGe HBT technology with f/sub max//f/sub T/=350/300 GHz and gate delay below 3.3 ps

T. Adam, S. Jeng, M. Khater, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz

David R. Greenberg, Basanth Jagannathan, Andreas D. Stricker, 2004, RFIC 2004.

A 5-6 Ghz Silicon-Germanium Vco With Tunable Polyphase Outputs

David Ivan Sanderson, D. Sanderson, 2003 .

Design considerations for monolithic Si-based RF VCOs in wireless single-chip systems

D. Sanderson, S. Raman, A. S. Klein, 2003, 2003 IEEE Topical Conference on Wireless Communication Technology.

Quality factor and inductance in differential IC implementations

Sanjay Raman, R. L. Bunch, D. I. Sanderson, 2002 .

Enabling RFCMOS solutions for emerging advanced applications

B. Jagannathan, P.E. Cottrell, Xudong Wang, 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.