U. Gogineni

A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies

S. Clark, J. Cressler, Shiming Zhang, 2000 .

RF power potential of 45 nm CMOS technology

J.A. del Alamo, C. Putnam, U. Gogineni, 2010, 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).

Effect of substrate contact shape and placement on RF characteristics of 45 nm low power CMOS devices

B. Jagannathan, S. Sweeney, U. Gogineni, 2009, 2009 IEEE Radio Frequency Integrated Circuits Symposium.

Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices

Jing Wang, Basanth Jagannathan, Hongmei Li, 2009, IEEE Journal of Solid-State Circuits.

Effect of substrate contact shape and placement on RF characteristics of 45 nm low power CMOS devices

B. Jagannathan, S. Sweeney, U. Gogineni, 2009, 2009 IEEE Radio Frequency Integrated Circuits Symposium.

RF Modeling of 45nm Low-Power CMOS Technology

R. Wachnik, B. Jagannathan, R. Groves, 2009 .

Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's

John D. Cressler, David C. Ahlgren, U. Gogineni, 1999 .

Hot electron and hot hole degradation of UHV/CVD SiGe HBT's

John D. Cressler, David L. Harame, U. Gogineni, 2000 .

Modeling frequency response of 65 nm CMOS RF power devices

D. Greenberg, U. Gogineni, C. Putnam, 2010 .

Performance limits of RF power CMOS

Usha Gogineni, U. Gogineni, 2011 .