K. Washio

发表

Self-aligned selective-epitaxial-growth Si/sub 1-x-y/Ge/sub x/C/sub y/ HBT technology featuring 170-GHz f/sub max/

K. Oda, E. Ohue, I. Suzumura, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

A 48ps ECL in a self-aligned bipolar technology

K. Nakazato, K. Washio, T. Nakamura, 1987, 1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

A Low-Phase-Noise Low-Power 27-GHz SiGe-VCO using Merged-Transformer Matching Circuit Technique

K. Washio, T. Nakamura, T. Masuda, 2007, 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.

45 GHz transimpedance 32 dB limiting amplifier and 40 Gb/s 1:4 high-sensitivity demultiplexer with decision circuit using SiGe HBTs for 40 Gb/s optical receiver

T. Masuda, N. Shiramizu, K. Washio, 2000, 2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056).

67-GHz static frequency divider using 0.2-/spl mu/m self-aligned SiGe HBTs

K. Oda, E. Ohue, R. Hayami, 2000, 2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096).

5.3-ps ECL and 71-GHz static frequency divider in self-aligned SEG SiGe HBT

K. Oda, E. Ohue, R. Hayami, 2001, Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212).

Optimization of characteristics related to the emitter-base junction in self-aligned SEG SiGe HBTs and their application in 72-GHz-static/92-GHz-dynamic frequency dividers

K. Oda, E. Ohue, R. Hayami, 2002 .

Ultra-high-speed scaled-down self-aligned SEG SiGe HBTs

K. Oda, E. Ohue, I. Suzumura, 2002, Digest. International Electron Devices Meeting,.

A 0.2-/spl mu/m 180-GHz-f/sub max/ 6.7-ps-ECL SOI/HRS self aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

Katsuyoshi Washio, M. Tanabe, Hiromi Shimamoto, 2000 .

40 Gb/s 4:1 multiplexer and 1:4 demultiplexer IC module using SiGe HBTs

K. Ohhata, T. Masuda, N. Shiramizu, 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

A wide dynamic range 1-k/spl Omega/ transimpedance Si bipolar preamplifier IC for 10-Gb/s optical fiber links

K. Washio, T. Masuda, K. Ohhata, 1997, Proceedings of CICC 97 - Custom Integrated Circuits Conference.

A wide-dynamic-range, high-transimpedance Si bipolar preamplifier IC for 10-Gb/s optical fiber links

Ryoji Takeyari, K. Ohhata, Toru Masuda, 1997 .

SiGe-on-insulator substrate fabricated by melt solidification for a strained-silicon complementary metal–oxide–semiconductor

K. Washio, N. Sugii, S. Yamaguchi, 2002 .

Design of a 32.7-GHz bandwidth AGC amplifier IC with wide dynamic range implemented in SiGe HBT

K. Ohhata, Toru Masuda, Katsuyoshi Washio, 1999 .

A variable inductor using mutual-current control and application to a SiGe 4.5-GHz VCO for wide tuning range

T. Nakamura, T. Masuda, K. Washio, 2005, 2005 Asia-Pacific Microwave Conference Proceedings.

A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25- /spl mu/m SiGe BiCMOS technology

K. Washio, T. Masuda, N. Shiramizu, 2005, 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers.

SiGe-HBT-based 54-gb/s 4:1 multiplexer IC with full-rate clock for serial communication systems

K. Ohhata, T. Masuda, N. Shiramizu, 2005, IEEE Journal of Solid-State Circuits.

High-efficiency power characteristics for WCDMA applications of SiGe HBT devices using a novel form of base-bias resistance

K. Washio, M. Kondo, I. Miyashita, 2003, IEEE MTT-S International Microwave Symposium Digest, 2003.

Precise control of doping profile and crystal quality improvement of SiGe HBTs using continuous epitaxial growth technology

K. Oda, H. Shimamoto, K. Washio, 2008 .

Variation in emitter diffusion depth by TiSi/sub 2/ formation on polysilicon emitters of Si bipolar transistors

H. Shimamoto, K. Washio, M. Kondo, 2001 .

12-ps ECL using low-base-resistance Si bipolar transistor by self-aligned metal/IDP technology

E. Ohue, K. Washio, M. Tanabe, 1997 .

MMICs Using SiGe BiCMOS for Ubiquitous Wireless Network

Toru Masuda, Katsuyoshi Washio, Takahiro Nakamura, 2007 .

Investigation of crystallinity, electrical conductivity, and optical transmittance of Mg-doped CuCrO2 deposited on buffer layer

K. Washio, T. Okada, Shoya Usui, 2021 .

Effect of forming gas annealing on improvement in crystal orientation of solid-phase calcined CuCrO2 thin film

K. Washio, T. Okada, T. Kawashima, 2020 .

Effect of V doping on initial growth of ZnO film on c-face sapphire substrate

K. Washio, H. Chiba, Shoya Usui, 2017 .

Aluminum and vanadium co-doping effects on the optical and electrical properties of oriented ZnO films

K. Washio, T. Okada, C. Tateyama, 2021 .

Synergy effects of Al-V-co-doping and oxygen reactive sputtering on electrical and optical properties of ZnO films

K. Washio, T. Okada, T. Kawashima, 2021 .

Investigation on a source of dominant donor in vanadium-doped ZnO films grown by reactive RF magnetron sputtering

K. Washio, T. Kawashima, D. Abe, 2017 .

Study on thermal solid-phase crystallization of amorphous ZnO thin films stacked on vanadium-doped ZnO films

K. Washio, H. Chiba, T. Kawashima, 2017 .

Study on Solid-Phase Crystallization of Amorphized Vanadium-Doped ZnO Thin Films

K. Washio, H. Chiba, T. Kawashima, 2016, Journal of Electronic Materials.

SiGe HBTs and ICs for optical-fiber communication systems

K. Washio, K. Washio, 1999 .

Optimization of Si-C reaction temperature and Ge thickness in C-mediated Ge dot formation

K. Washio, Y. Itoh, Y. Satoh, 2016 .

Formation of Ge quantum dots on Si substrate using consecutive deposition of Ge/C and in situ post annealing

K. Washio, Y. Itoh, T. Kawashima, 2014 .

The Annealing Behavior of Si–F Bonding Structure of Amorphous Si–F Films

K. Washio, K. Abe, M. Tsuji, 1983 .

Optical and structural properties of CuCrO2 thin films on c-face sapphire substrate deposited by reactive RF magnetron sputtering

K. Washio, H. Chiba, T. Kawashima, 2017 .

Formation of Ge dot or film in Ge/Si heterostructure by using sub-monolayer carbon deposition on top and in-situ post annealing

K. Washio, Y. Itoh, T. Kawashima, 2016 .

Low-Temperature Heteroepitaxial Growth of Single-Domain V-Doped ZnO Films on c-Face Sapphire

K. Washio, Tatsuya Mori, H. Chiba, 2015, Journal of Electronic Materials.

Thermal stability of conductive and transparent V-doped ZnO thin films

K. Washio, Tatsuya Mori, H. Chiba, 2014 .

Formation of Ge dots on Si(100) using reaction of Ge with sub-monolayer carbon on top

K. Washio, Y. Itoh, T. Kawashima, 2015 .

Effects of carbon coverage on Ge quantum dots formation on Si(100) using C-Si reaction and transition of Ge growth mode

K. Washio, Y. Itoh, T. Kawashima, 2017 .

Rapid synthesis of Zn3(VO4)2 phosphor film on quartz substrate by RF magnetron sputtering and rapid thermal processing

K. Washio, T. Kawashima, 2017 .

Effects of high-concentration phosphorus doping on crystal quality and lattice strain in SiGe HBTs

K. Oda, H. Shimamoto, K. Washio, 2008 .

A selective-epitaxial SiGe HBT with SMI electrodes featuring 9.3-ps ECL-gate delay

K. Washio, M. Tanabe, H. Shimamoto, 1997, International Electron Devices Meeting. IEDM Technical Digest.

A 24-GHz low-power fully integrated receiver with image-rejection using Rich-Transformer Direct-Stacked/Coupled technique

Toru Masuda, Katsuyoshi Washio, Takahiro Nakamura, 2010, 2010 IEEE Radio Frequency Integrated Circuits Symposium.

Comparison study of V-doped ZnO thin films on polycarbonate and quartz substrates deposited by RF magnetron sputtering

Katsuyoshi Washio, Hiroshi Chiba, Tomoyuki Kawashima, 2016 .

Self-aligned selective-epitaxial-growth SiGe HBTs: process, device, and ICs

K. Oda, E. Ohue, R. Hayami, 2000 .

Self-Aligned SiGe HBT Technology for Optical-Fiber-Links and Millimeter-Wave Applications

K. Washio, 2000 .

A heterojunction bipolar transistor with an epitaxially regrown emitter

K. Washio, T. Nakamura, T. Tanoue, 1992, 1992 International Technical Digest on Electron Devices Meeting.

Control of Growth Modes by Carbon Mediation in Formation of Ge Quantum Dots on Si(100)

K. Washio, Y. Itoh, T. Kawashima, 2017, IEEE Transactions on Nanotechnology.

Control of VW and SK growth modes in Ge quantum dot formation on Si(100) via carbon mediation

K. Washio, Y. Itoh, T. Kawashima, 2016, 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO).

Ge dots formation using Si(100)-c(4×4) surface reconstruction

K. Washio, Y. Itoh, Y. Satoh, 2016 .

Structural transition in Ge growth on Si mediated by sub-monolayer carbon

K. Washio, Y. Itoh, Shinji Hatakeyama, 2014 .

Output density quantification of electricity generation by flowing deionized water on graphene

T. Ohara, K. Washio, M. Meyyappan, 2020 .

Effects of Ge growth rate and temperature on C-mediated Ge dot formation on Si (100) substrate

K. Washio, Y. Itoh, Y. Satoh, 2017 .

63 ps ECL circuits using advanced SICOS technology

K. Washio, T. Nakamura, T. Hayashida, 1986, 1986 International Electron Devices Meeting.

Thermal solid-phase crystallization of amorphous CuCrO2:N thin films deposited by reactive radio-frequency magnetron sputtering

K. Washio, H. Chiba, T. Kawashima, 2017 .

130-GHz f/sub T/ SiGe HBT technology

K. Washio, M. Tanabe, T. Onai, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Characterization and Modeling of Microstrip Transmission Lines with Slow-Wave Effect

T. Nakamura, T. Masuda, N. Shiramizu, 2008, 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

Conductive and transparent V-doped ZnO thin films grown by radio frequency magnetron sputtering

K. Washio, Tatsuya Mori, H. Chiba, 2014 .

Influence of N2 introduction on structural and optical properties of V-doped ZnO thin films grown by low-temperature reactive RF magnetron sputtering

K. Washio, Tomoya Suzuki, H. Chiba, 2017 .

Effect of vanadium doping on amorphization of ZnO thin films on c-plane sapphire substrate

K. Washio, H. Chiba, T. Kawashima, 2016 .

Growth and Characterization of ZnO Thin Film by RF Magnetron Sputtering for Photoacoustic Tomography Sensor

K. Washio, T. Matsuo, Shuhei Okuda, 2013 .

Low-temperature formation of self-assembled Ge quantum dots on Si(100) under high carbon mediation via solid-phase epitaxy

K. Washio, Y. Itoh, T. Kawashima, 2017 .

Bipolar Transistors

John D. Cressler, Katsuyoshi Washio, J. Cressler, 2007 .

Advanced Self-Alignment Technologies and Resulting Structures of High-Speed Bipolar transistors

K. Nakazato, K. Washio, Y. Tamaki, 1988 .

Transition of carbon binding states on Si(1 0 0) depending on substrate temperature and its effect on Ge growth

K. Washio, Y. Itoh, T. Kawashima, 2014 .

Reduction of Base Resistance and Increase in Cutoff Frequency of Si Bipolar Transistor Using Rapid Vapor-Phase Doping

K. Washio, Y. Kiyota, T. Inada, 2000 .

Ultra High Speed Bipolar Device-SICOS

Kazuo Nakazato, Katsuyoshi Washio, Tetsuya Hayashida, 1986 .

Enhanced performance of strained Strained-Si MOSFETs on CMP sige virtual substrate

D. Hisamoto, K. Washio, N. Sugii, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).