K. Violette

发表

A highly manufacturable 0.25/spl mu/m RF technology utilizing a unique SiGe integration

F. Johnson, J. Ai, S. Dunn, 2001, Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212).

Smooth amorphous silicon deposition on silicon dioxide with high deposition rates by rapid thermal chemical vapor deposition using disilane

K. Violette, M. C. Öztürk, D. Maher, 1995 .

Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition of Epitaxial Silicon onto (100) Silicon I . The Influence of Prebake on (Epitaxy/Substrate) Interfacial Oxygen and Carbon Levels

K. Violette, I. Ban, M. C. Öztürk, 1995 .

Low Temperature Selective Silicon Epitaxy Using Si 2 H 6 , H 2 and Cl 2 in Ultra High Vacuum Rapid Thermal Chemical Vapor Deposition

K. Violette, M. C. Öztürk, D. Maher, 1995 .

Low temperature selective silicon epitaxy by ultra high vacuum rapid thermal chemical vapor deposition using Si2H6, H2 and Cl2

K. Violette, M. C. Öztürk, D. Maher, 1996 .

Facet Free Selective Silicon Epitaxy by Rapid Thermal Chemical Vapor Deposition

K. Violette, C. Chao, R. Wise, 1998 .

Low Temperature Selective Si Epitaxy Using Si2H6 and Cl2: Investigations into Selectivity Robustness and Epitaxial Film Quality

K. Violette, D. Batchelor, M. C. Öztürk, 1996 .

On the role of chlorine in selective silicon epitaxy by chemical vapor deposition

K. Violette, M. C. Öztürk, D. Maher, 1996 .

N-Channel Mos Transistors below 0.5 μm with Ultra-Shallow Channels formed by Low Temperature Selective Silicon Epitaxy

K. Violette, M. C. Öztürk, P. Huang, 1995 .

Growth Kinetics, Silicon Nucleation on Silicon Dioxide, and Selective Epitaxy Using Disilane and Hydrogen in an Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition Reactor

K. Violette, M. C. Öztürk, G. Harris, 1994 .

Low temperature silicon epitaxy in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor using disilane

K. Violette, M. C. Öztürk, M. Sanganeria, 1993 .

Silicon Nucleation and Film Evolution on Silicon Dioxide Using Disilane Rapid Thermal Chemical Vapor Deposition of Very Smooth Silicon at High Deposition Rates

K. Violette, M. C. Öztürk, D. Maher, 1996 .

Low resistance Ti or Co salicided raised source/drain transistors for sub-0.13 /spl mu/m CMOS technologies

M. Nandakumar, J. Kittl, K. Violette, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Nucleation and Growth of Polycrystalline Silicon Films in an Ultra high Vacuum Rapid Thermal Chemical Vapor Deposition Reactor Using Disilane and Hydrogen

K. Violette, M. C. Öztürk, G. Harris, 1994 .

66‐3: Invited Paper: Colloidal Quantum Dot Photodetectors for Large Format NIR, SWIR, and eSWIR Imaging Arrays

K. Violette, E. Klem, A. Hilton, 2021, SID Symposium Digest of Technical Papers.

Sub-Half Micron Elevated SourceDrain NMOSFETS by Low Temperature Selective Epitaxial Deposition

N. A. Masnari, K. Violette, C. Osburn, 1996 .

Ultra-Shallow Raised P + N Junctions with Self-Aligned Titanium Silicide Contacts formed by Boron Outdiffusion from Selectively Deposited Silicon Epitaxial Layers

K. Violette, M. C. Öztürk, H. Shih, 1995 .