J. Sun

发表

On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues

J. Cressler, J. Comfort, E. Crabbé, 1993 .

A high-performance 0.25- mu m CMOS technology. II. Technology

Y. Taur, K. Petrillo, J. Sun, 1992 .

Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits

J. Cressler, D. Harame, J. Comfort, 1995 .

Deactivation of the boron acceptor in silicon by hydrogen

J. Sun, C. Sah, J. Tzou, 1983 .

Characteristics of SOI FET's under pulsed conditions

Keith A. Jenkins, J. Gautier, Jack Y.-C. Sun, 1997 .

Avalanche electron injection in 4-nm Si/sub 3/N/sub 4//8-nm SiO/sub 2/ dielectric structure: turn-around phenomenon and Si-SiO/sub 2/ interface degradation

J. Sun, M. Severi, L. Dori, 1990 .

Characteristics of Oxide Breakdown and Related Impact on Device of Ultrathin (2.2 nm) Silicon Dioxide

Shien-Yang Wu, J. Sun, Y. See, 2003 .

Study of the atomic models of three donor‐like traps on oxidized silicon with aluminum gate from their processing dependences

J. Sun, C. Sah, J. Tzou, 1983 .

Generation‐annealing kinetics and atomic models of a compensating donor in the surface space charge layer of oxidized silicon

J. Sun, C. Sah, J. Tzou, 1983 .

Generation annealing kinetics of interface states on oxidized silicon activated by 10.2-eV photohole injection

J. Sun, C. Sah, J. Tzou, 1982 .

Gate Material Dependence Of Process Charging Damage In Thin Gate Oxide

S. Greco, J. Sun, W. Abadeer, 1996, Proceedings of 1st International Symposium on Plasma Process-Induced Damage.

Novel Chip Standby Current Prediction Model and Ultrathin Gate Oxide Scaling Limit

J. Sun, Y. See, C. Chao, 2002 .

45nm node planar-SOI technology with 0.296μm2 6T-SRAM cell

Chenming Hu, Mong-Song Liang, Fu-Liang Yang, 2004, VLSIT 2004.

Effects of keV electron irradiation on optical generation of hole traps in thermal oxide on silicon

J. Sun, C. Sah, J. Tzou, 1984 .

Effects of keV electron irradiation on the avalanche‐electron generation rates of three donors on oxidized silicon

J. Sun, C. Sah, J. Tzou, 1983 .

Foundry technology trend

Jack Y. C. Sun, J. Sun, 1998, Advanced Lithography.

Characteristics of Arsenic Doped Polycrystalline Silicon-Gate Capacitors After Rapid Thermal Processing

J. Sun, P. McFarland, A. Megdanis, 1987 .