Zhenrong Jin

On the High-Temperature (to 300 C) Characteristics

J. Cressler, A. Joseph, Q. Liang, 2004 .

1/f noise in proton-irradiated SiGe HBTs

R. Reed, P. Marshall, C. Marshall, 2001 .

On the suitability of SiGe HBTs for high-temperature (to 300/spl deg/) electronics

J. Cressler, A. Joseph, Q. Liang, 2004, Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting.

Impact of geometrical scaling on low-frequency noise in SiGe HBTs

J. Cressler, G. Niu, A. Joseph, 2003 .

Proton radiation response of SiGe HBT analog and RF circuits and passives

R. Reed, P. Marshall, C. Marshall, 2001 .

RF characterization and parameter extraction for CMOS device models

Basanth Jagannathan, Jing Wang, L. Wagner, 2007, 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

Modeling and characterization of SiGe HBT low-frequency noise figures-of-merit for RFIC applications

Alvin J. Joseph, John D. Cressler, David L. Harame, 2002 .

Hot-carrier stress induced low-frequency noise degradation in 0.13 /spl mu/m and 0.18 /spl mu/m RF CMOS technologies

J. Cressler, A. Joseph, Zhenrong Jin, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

Corrections to “An Investigation of Low-Frequency Noise in Complementary SiGe HBTs”

J. Cressler, A. Sutton, R. Krithivasan, 2006 .