H. J. Osten

发表

Increasing process margin in SiGe heterojunction bipolar technology by adding carbon

H. J. Osten, D. Knoll, B. Heinemann, 1999 .

Modeling the effect of carbon on boron diffusion

H. J. Osten, B. Heinemann, G. Fischer, 1997, SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest.

The effect of carbon incorporation on SiGe heterobipolar transistor performance and process margin

H. J. Osten, D. Knoll, B. Heinemann, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Si/SiGe:C heterojunction bipolar transistors in an epi-free well, single-polysilicon technology

Young Kim, H. J. Osten, D. Knoll, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Dopant diffusion in C-doped Si and SiGe: physical model and experimental verification

H. J. Osten, D. Knoll, B. Heinemann, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Dopant diffusion control by adding carbon into Si and SiGe: principles and device application

H. J. Osten, D. Knoll, H. Rücker, 2001 .

High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

H.J. Osten, O. Buiu, B. Raeissi, 2007, ESSDERC 2007 - 37th European Solid State Device Research Conference.

The effects of proton irradiation on SiGe:C HBTs

John D. Cressler, Paul W. Marshall, Cheryl J. Marshall, 2001 .

Interface formation during molecular beam epitaxial growth of neodymium oxide on silicon

M. Czernohorsky, Eberhard Bugiel, Andreas Fissel, 2006 .

Complementary metal oxide semiconductor integration of epitaxial Gd2O3

Max C. Lemme, Udo Schwalke, Michael Schmidt, 2009 .

CMOS integration of epitaxial Gd2O3 high-k gate dielectrics

J. K. Efavi, Max C. Lemme, Michael Schmidt, 2006 .

Effects of carbon on boron diffusion in SiGe: Principles and impact on bipolar devices

Bernd Heinemann, Dieter Knoll, Gunther Lippert, 1998 .

Carbon doped SiGe heterojunction bipolar transistors for high frequency applications

D. Knoll, B. Tillack, H.J. Osten, 1999, Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024).

Epitaxial lanthanide oxide thin films on Si for high-k gate dielectric application: Growth optimization and defect passivation

H. J. Osten, H. Osten, A. Fissel, 2017 .

Characterization of very thin MBE-grown Ge epilayers on (001) Si

Wolfgang Kissinger, H. J. Osten, Gunther Lippert, 1994, Photonics West - Lasers and Applications in Science and Engineering.

Silicide reaction of Co with Si0.999C0.001

H. J. Osten, S. Teichert, G. Lippert, 1999 .

0.86-nm CET Gate Stacks With Epitaxial$hboxGd_2hboxO_3$High-$k$Dielectrics and FUSI NiSi Metal Electrodes

H. J. Osten, H. Kurz, E. Bugiel, 2006, IEEE Electron Device Letters.

High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide

Eberhard Bugiel, H. J. Osten, J. P. Liu, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).