D. Bolze

发表

Cost-effective high-performance high-voltage SiGe:C HBTs with 100 GHz f/sub T/ and BV/sub CEO/ /spl times/ f/sub T/ products exceeding 220 VGHz

D. Knoll, B. Heinemann, P. Schley, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay

C. Wipf, D. Knoll, B. Heinemann, 2010, 2010 International Electron Devices Meeting.

Novel collector design for high-speed SiGe:C HBTs

D. Knoll, B. Heinemann, P. Schley, 2002, Digest. International Electron Devices Meeting,.

Dopant diffusion in C-doped Si and SiGe: physical model and experimental verification

H. J. Osten, D. Knoll, B. Heinemann, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

A Low-Cost, High-Performance, High-Voltage Complementary BiCMOS Process

D. Knoll, B. Heinemann, P. Schley, 2006, 2006 International Electron Devices Meeting.

Millisecond annealing of high-performance SiGe HBTs

B. Heinemann, D. Bolze, J. Gelpey, 2009, 2009 17th International Conference on Advanced Thermal Processing of Semiconductors.

SiGe:C BiCMOS technology with 3.6 ps gate delay

D. Knoll, R. Scholz, B. Tillack, 2003, IEEE International Electron Devices Meeting 2003.

SiGe HBT module with 2.5 ps gate delay

D. Knoll, B. Tillack, R. Barth, 2008, 2008 IEEE International Electron Devices Meeting.

Luminescence of Silicon Implanted with Phosphorus

D. Bolze, K. Ehwald, M. Kittler, 2003 .

Atomic layer processing for doping of SiGe

D. Knoll, B. Heinemann, D. Bolze, 2006 .

Mechanisms of B deactivation control by F co-implantation

A. Smith, D. Bolze, N. Cowern, 2005 .

Characterization of silicide stacks by combination of spectroscopic ellipsometry and reflectometry

D. Bolze, P. Zaumseil, I. Costina, 2008 .

Chemical and plasmachemical vapour deposition of aluminium nitride layers

D. Bolze, H. Arnold, G. Eichhorn, 1976 .

Optical properties of aluminium nitride prepared by chemical and plasmachemical vapour deposition

D. Bolze, J. Bauer, L. Biste, 1977 .

Effects of various Co/TiN and Co/Ti layer stacks and the salicide rapid thermal process conditions on cobalt silicide formation

D. Bolze, D. Wolansky, O. Fursenko, 2004 .

Development of spectroscopic ellipsometry as in-line control for Co SALICIDE process

D. Bolze, D. Wolansky, B. Tillack, 2004 .

Optimization of diffusion, activation and damage annealing in millisecond annealing

H. Kheyrandish, P. J. Timans, J. Gelpey, 2008, 2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors.

Diffusion and segregation of shallow As and Sb junctions in silicon

B. Heinemann, D. Bolze, R. Kurps, 2004 .

Formation of shallow source/drain extensions for metal–oxide–semiconductor field-effect-transistors by antimony implantation

B. Heinemann, D. Bolze, R. Kurps, 2003 .

Dopant profile engineering using ArF excimer laser, flash lamp and spike annealing for junction formation

D. Bolze, A. Scheit, W. Skorupa, 2014, 2014 20th International Conference on Ion Implantation Technology (IIT).

The impact of channel engineering on the performance and reliability of LDMOS transistors

R. Barth, P. Schley, H.E. Wulf, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

Influence of halo implant on leakage current and sheet resistance of ultrashallow p-n junctions

D. Schroder, D. Bolze, W. Vandervorst, 2007 .

A complementary BiCMOS technology with high speed npn and pnp SiGe:C HBTs

D. Knoll, R. Scholz, R. Barth, 2003, IEEE International Electron Devices Meeting 2003.

SiGe Heteroepitaxy for High Frequency Circuits

D. Knoll, P. Schley, D. Bolze, 1998 .

Electrical characterisation and predictive simulation of defects induced by keV Si + implantation in n-type Si

D. Bolze, F. Cristiano, Y. Yamamoto, 2013 .

The impact of supersaturated carbon on transient enhanced diffusion

Bernd Heinemann, Holger Rücker, Rainer Kurps, 1999 .

Carrier density profiling of ultra-shallow junction layer through corrected C-V plotting

D. Bolze, J. Gelpey, P. Timans, 2008, Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08).

Raman metrology for advanced CMOS devices - advantages and challenges

Steve McCoy, Patrick J. McNally, D. Bolze, 2009 .