R. Kurps

发表

Cost-effective high-performance high-voltage SiGe:C HBTs with 100 GHz f/sub T/ and BV/sub CEO/ /spl times/ f/sub T/ products exceeding 220 VGHz

D. Knoll, B. Heinemann, P. Schley, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

High-speed, waveguide Ge PIN photodiodes for a photonic BiCMOS process

D. Knoll, R. Kurps, M. Kroh, 2014, 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay

C. Wipf, D. Knoll, B. Heinemann, 2010, 2010 International Electron Devices Meeting.

Novel collector design for high-speed SiGe:C HBTs

D. Knoll, B. Heinemann, P. Schley, 2002, Digest. International Electron Devices Meeting,.

SUPPRESSED DIFFUSION OF BORON AND CARBON IN CARBON-RICH SILICON

B. Heinemann, R. Kurps, H. Rücker, 1998 .

Modeling the effect of carbon on boron diffusion

H. J. Osten, B. Heinemann, G. Fischer, 1997, SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest.

Dopant diffusion in C-doped Si and SiGe: physical model and experimental verification

H. J. Osten, D. Knoll, B. Heinemann, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Nonequilibrium point defects and dopant diffusion in carbon-rich silicon

B. Heinemann, R. Kurps, H. Ruecker, 2001 .

Dopant Diffusion in SiGeC Alloys

B. Heinemann, R. Kurps, H. Rucker, 2006 .

SiGe HBT module with 2.5 ps gate delay

D. Knoll, B. Tillack, R. Barth, 2008, 2008 IEEE International Electron Devices Meeting.

SIMS and AES characterization of ultrathin nitroxide dielectric layers on silicon prepared by N2O-RTP

R. Kurps, G. Weidner, D. Krüger, 1993 .

Use of ultrasound for metal cluster engineering in ion implanted silicon oxide

R. Kurps, P. Oelhafen, V. Melnik, 2007 .

Arsenic doped buried plate characterization in deep trenches for a 0.25 μm complementary metal–oxide–semiconductor technology by chemical etching

R. Kurps, P. Gaworzewski, D. Krüger, 2000 .

Precise Measurement of Ge Depth Profiles in SiGe HBT's - a Comparison of Different Methods

R. Kurps, P. Zaumseil, D. Krüger, 2003 .

Oxide formation during ion bombardment of small silicon structures

R. Kurps, E. Bugiel, E. Pippel, 2004 .

Phosphorus segregation at polysilicon-silicon interfaces from in situ P spike-doped silicon films

R. Kurps, P. Gaworzewski, D. Krüger, 1995 .

Fluorine incorporation into gate stacks of advanced silicon memory technologies: Simulation, depth distribution, and reliability

R. Kurps, P. Gaworzewski, J. Dabrowski, 2001 .

Influence of fluorine contamination on reliability of thin gate oxides

R. Kurps, P. Gaworzewski, D. Krüger, 2000 .

Phosphorus Atomic Layer Doping in Ge Using RPCVD

R. Kurps, B. Tillack, Y. Yamamoto, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Nitrogen saturation behaviour near the SiO 2 /Si-interface during N 2 O-rapid thermal oxidation

K. Blum, R. Kurps, G. Weidner, 1993 .

Deconvolution of narrow boron SIMS depth profiles in Si and SiGe

B. Heinemann, K. Ehwald, R. Kurps, 1995 .

Improved Auger electron spectroscopy sputter depth profiling of W/WNx and WSix layers on Si substrates

R. Kurps, G. Weidner, D. Krüger, 2001 .

Investigation of Defect Generation and Precipitation in Antimony Implanted Silicon

R. Kurps, P. Zaumseil, D. Krüger, 1993 .

Ultrashallow secondary ion mass spectroscopy depth profiling of doping spikes and Si/SiGe/Si heterostructures using different primary species

A. Benninghoven, B. Heinemann, R. Kurps, 1998 .

Oxygen Ion Bombardment for Local Oxide Formation in Si

R. Kurps, G. Weidner, D. Krüger, 2003 .

Oxygen beam SIMS depth profiling of Si1−xGex layers: transient processes

R. Kurps, B. Tillack, E. Bugiel, 2002 .

Dopant electrical activity of Si and Si1−xGex multilayer structures doped with δ‐like boron spikes at different temperatures

R. Kurps, H. Rücker, P. Gaworzewski, 1994 .

Thermal stability of Pr2O3 films grown on Si(100) substrate

R. Kurps, E. Bugiel, D. Krüger, 2002 .

Diffusion and segregation of shallow As and Sb junctions in silicon

B. Heinemann, D. Bolze, R. Kurps, 2004 .

Formation of shallow source/drain extensions for metal–oxide–semiconductor field-effect-transistors by antimony implantation

B. Heinemann, D. Bolze, R. Kurps, 2003 .

Arsenic atomic layer doping in Si using AsH3

R. Kurps, B. Tillack, Y. Yamamoto, 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM).

B atomic layer doping of Ge

R. Kurps, B. Tillack, J. Murota, 2010 .

P doping control during SiGe:C epitaxy

K. Kopke, R. Kurps, B. Tillack, 2006 .

Influence of in situ ultrasound treatment during ion implantation on amorphization and junction formation in silicon

R. Kurps, D. Krüger, V. Melnik, 2002 .

Atomically smooth and single crystalline Ge(111)/cubic-Pr2O3(111)/Si(111) heterostructures: Structural and chemical composition study

R. Kurps, P. Zaumseil, T. Schroeder, 2009 .

Influence of surfactants on molecular beam epitaxial grown SiGe single quantum wells studied by photoluminescence and secondary ion mass spectroscopy investigations

R. Kurps, J. Klatt, D. Krüger, 1995 .

Effect of sodium and oxygen doping on the conductivity of CuInS2 thin films

R. Kurps, R. Scheer, M. Kanis, 2000 .

A complementary BiCMOS technology with high speed npn and pnp SiGe:C HBTs

D. Knoll, R. Scholz, R. Barth, 2003, IEEE International Electron Devices Meeting 2003.

Selective vapor phase etching of SiGe by HCl in a RPCVD reactor

K. Kopke, R. Kurps, B. Tillack, 2008 .

Influence of interdiffusion and surfactants on Si/SiGe heterointerfaces

R. Kurps, E. Bugiel, J. Klatt, 1996 .

The impact of supersaturated carbon on transient enhanced diffusion

Bernd Heinemann, Holger Rücker, Rainer Kurps, 1999 .

Lateral inhomogeneous boron segregation during silicon thin film growth with molecular beam epitaxy

Rainer Kurps, Gunther Lippert, D. Krüger, 1994 .

Oxygen incorporation and oxygen‐induced defect formation in thin Si and Si1−xGex layers on silicon grown by chemical vapor deposition at atmospheric pressure

R. Kurps, E. Bugiel, D. Krüger, 1994 .

Characterization of B and Sb delta‐doping profiles in Si and Si1−xGex alloys grown by molecular‐beam epitaxy

R. Kurps, P. Gaworzewski, D. Krüger, 1996 .