H. Rucker

发表

Cost-effective high-performance high-voltage SiGe:C HBTs with 100 GHz f/sub T/ and BV/sub CEO/ /spl times/ f/sub T/ products exceeding 220 VGHz

D. Knoll, B. Heinemann, P. Schley, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay

C. Wipf, D. Knoll, B. Heinemann, 2010, 2010 International Electron Devices Meeting.

Novel collector design for high-speed SiGe:C HBTs

D. Knoll, B. Heinemann, P. Schley, 2002, Digest. International Electron Devices Meeting,.

Modeling the effect of carbon on boron diffusion

H. J. Osten, B. Heinemann, G. Fischer, 1997, SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest.

The effect of carbon incorporation on SiGe heterobipolar transistor performance and process margin

H. J. Osten, D. Knoll, B. Heinemann, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Dopant diffusion in C-doped Si and SiGe: physical model and experimental verification

H. J. Osten, D. Knoll, B. Heinemann, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

A Low-Cost, High-Performance, High-Voltage Complementary BiCMOS Process

D. Knoll, B. Heinemann, P. Schley, 2006, 2006 International Electron Devices Meeting.

Dopant Diffusion in SiGeC Alloys

B. Heinemann, R. Kurps, H. Rucker, 2006 .

Base doping and dopant profile control of SiGe npn and pnp HBTs

D. Knoll, B. Heinemann, H. Rucker, 2008 .

SiGe:C BiCMOS technology with 3.6 ps gate delay

D. Knoll, R. Scholz, B. Tillack, 2003, IEEE International Electron Devices Meeting 2003.

SiGe HBT module with 2.5 ps gate delay

D. Knoll, B. Tillack, R. Barth, 2008, 2008 IEEE International Electron Devices Meeting.

Carbon doped SiGe heterojunction bipolar transistors for high frequency applications

D. Knoll, B. Tillack, H.J. Osten, 1999, Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024).

Time resolution and power consumption of a monolithic silicon pixel prototype in SiGe BiCMOS technology

M. Kaynak, H. Rucker, R. Cardarelli, 2020, 2005.14161.

A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology

H. Rucker, R. Cardarelli, G. Iacobucci, 2019, Journal of Instrumentation.

SiGe HBT CML Ring Oscillator With 2.3-ps Gate Delay at Cryogenic Temperatures

J. Cressler, B. Heinemann, H. Rucker, 2010, IEEE Transactions on Electron Devices.

Atomic layer processing for doping of SiGe

D. Knoll, B. Heinemann, D. Bolze, 2006 .

A Silicon Balanced Subharmonic Optoelectronic Mixer for 60-GHz Fiber-Wireless Downlink Application

H. Rucker, Myung-Jae Lee, W. Choi, 2011, IEEE Photonics Technology Letters.

High performance RF LDMOS transistors with 5 nm gate oxide in a 0.25 /spl mu/m SiGe:C BiCMOS technology

D. Knoll, R. Barth, H.E. Wulf, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Half-Terahertz SiGe BiCMOS technology

B. Heinemann, A. Fox, H. Rucker, 2012, 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

The impact of channel engineering on the performance and reliability of LDMOS transistors

R. Barth, P. Schley, H.E. Wulf, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

A complementary BiCMOS technology with high speed npn and pnp SiGe:C HBTs

D. Knoll, R. Scholz, R. Barth, 2003, IEEE International Electron Devices Meeting 2003.

High-performance photonic BiCMOS process for the fabrication of high-bandwidth electronic-photonic integrated circuits

D. Knoll, R. Barth, K. Voigt, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Silicon Photonics-Wireless Interface IC for 60-GHz Wireless Link

H. Rucker, H. Rucker, Woo-Young Choi, 2012, IEEE Photonics Technology Letters.

SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project

K. Aufinger, T. F. Meister, G. Fischer, 2015, 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM.

A 140-180-GHz Broadband Amplifier with 7 dBm OP1dB and 400 GHz GBW in SiGe BiCMOS

Andreas Stelzer, Holger Rucker, Muhammad Furqan, 2015, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

A 70 GHz static dual-modulus frequency divider in SiGe BiCMOS technology

Dietmar Kissinger, Bernd Heinemann, Holger Rucker, 2015, 2015 10th European Microwave Integrated Circuits Conference (EuMIC).

Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology

Rudolf Lachner, Bernd Heinemann, Steffen Marschmeyer, 2015, IEEE Electron Device Letters.

Experimental and theoretical study of fT for SiGe HBTs with a scaled vertical doping profile

M. Schroter, A. Pawlak, B. Heinemann, 2015, 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM.

Bandwidth Improvement of CMOS-APD With Carrier-Acceleration Technique

Woo-Young Choi, Holger Rucker, Myung-Jae Lee, 2015, IEEE Photonics Technology Letters.

Effects of Guard-Ring Structures on the Performance of Silicon Avalanche Photodetectors Fabricated With Standard CMOS Technology

Woo-Young Choi, H. Rucker, Myung-Jae Lee, 2012, IEEE Electron Device Letters.

A single-poly EEPROM cell for embedded memory applications

S. Lischke, A. Di Bartolomeo, Holger Rucker, 2009 .

A 245 GHz LNA in SiGe Technology

K. Schmalz, J. Borngraber, R. Weber, 2012, IEEE Microwave and Wireless Components Letters.

Optimization of Si MOS transistors for THz detection using TCAD simulation

H. Rucker, N. Mohapatra, R. Jain, 2014, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

A 245 GHz transmitter in SiGe technology

K. Schmalz, B. Heinemann, J. Borngraber, 2012, 2012 IEEE Radio Frequency Integrated Circuits Symposium.

Two-dimensional dopant profiling of deep submicron MOS devices by electron holography

A. Ourmazd, P. Schwander, H. Rucker, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).