H. Wulf

Cost-effective high-performance high-voltage SiGe:C HBTs with 100 GHz f/sub T/ and BV/sub CEO/ /spl times/ f/sub T/ products exceeding 220 VGHz

D. Knoll, B. Heinemann, P. Schley, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Novel collector design for high-speed SiGe:C HBTs

D. Knoll, B. Heinemann, P. Schley, 2002, Digest. International Electron Devices Meeting,.

A Low-Cost, High-Performance, High-Voltage Complementary BiCMOS Process

D. Knoll, B. Heinemann, P. Schley, 2006, 2006 International Electron Devices Meeting.

SiGe:C BiCMOS technology with 3.6 ps gate delay

D. Knoll, R. Scholz, B. Tillack, 2003, IEEE International Electron Devices Meeting 2003.

High performance RF LDMOS transistors with 5 nm gate oxide in a 0.25 /spl mu/m SiGe:C BiCMOS technology

D. Knoll, R. Barth, H.E. Wulf, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

A Complementary RF-LDMOS Architecture Compatible with 0.13μm CMOS Technology

N.R. Mohapatra, H. Ruecker, K.E. Ehwald, 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

The impact of channel engineering on the performance and reliability of LDMOS transistors

R. Barth, P. Schley, H.E. Wulf, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

Application of electrochemical capacitance-voltage measurements for profiling in silicon

H. Wulf, D. Röser, N. Sieber, 1991 .

Computer Aided Design of Integrated Optical Circuits

Edgar Voges, Horst Wulf, H. Wulf, 1991 .