W. Ansley

Neutron radiation tolerance of advanced UHV/CVD SiGe HBT BiCMOS technology

S. Clark, J. Cressler, J. M. Roldan, 1997 .

An investigation of the spatial location of proton-induced traps in SiGe HBTs

S. Clark, J. Cressler, D. Ahlgren, 1998 .

A unified approach to RF and microwave noise parameter modeling in bipolar transistors

John D. Cressler, David L. Harame, W. E. Ansley, 2001 .

Noise parameter optimization of UHV/CVD SiGe HBT's for RF and microwave applications

John D. Cressler, W. E. Ansley, Guofu Niu, 1999 .

A 2-D numerical simulation methodology for noise figure optimization in UHV/CVD SiGe HBT's

J. Cressler, G. Niu, W. Ansley, 1998, 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.98EX271).

Effect of Ge profile on the frequency response of a SiGe pFET on sapphire technology

J. Cressler, B. Meyerson, S. Mathew, 1997, 1997 55th Annual Device Research Conference Digest.

Noise modeling and SiGe profile design tradeoffs for RF applications [HBTs]

Alvin J. Joseph, John D. Cressler, Lawrence E. Larson, 2000 .

SiGe profile design tradeoffs for RF circuit applications

Guofu Niu, J. Cressler, A. Joseph, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Intermodulation characteristics of UHV/CVD SiGe HBTs

John D. Cressler, W. E. Ansley, Guofu Niu, 1999, Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024).

Base-profile optimization for minimum noise figure in advanced UHV/CVD SiGe HBT's

John D. Cressler, W. E. Ansley, J. Cressler, 1998 .