H. Osten

发表

An equilibrium model for buried SiGe strained layers

A. Fischer, H. Osten, H. Richter, 2000 .

High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide

Eberhard Bugiel, H. J. Osten, J. P. Liu, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si1−yCy on Si(001)

H. Osten, P. Zaumseil, Myeongcheol Kim, 1996 .

Substitutional carbon incorporation during Si1−x−yGexCy growth on Si(100) by molecular-beam epitaxy: Dependence on germanium and carbon

H. Osten, J. P. Liu, 2000 .

Band offset predictions for strained group IV alloys: Si1-x-yGexCy on Si(001) and Si1-xGex on Si1-zGez(001)

Philippe Dollfus, S. Galdin, P. Hesto, 2000 .

Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application

H. Osten, E. Bugiel, A. Laha, 2008, COMMAD 2008.

The effect of anharmonic vibration and centrifugal distortion on nuclear shielding in linear triatomic molecules: NNO and CO2

H. Osten, C. Jameson, 1984 .

Epitaxial growth of Pr2O3 on Si(111) and the observation of a hexagonal to cubic phase transition during postgrowth N2 annealing

H. Osten, J. P. Liu, E. Bugiel, 2001 .

Wafer-scale all-epitaxial GeSn-on-insulator on Si(1 1 1) by molecular beam epitaxy

H. Osten, S. Mahapatra, J. Rathore, 2018, Journal of Physics D: Applied Physics.

Dielectric functions, elasto-optical effects, and critical-point parameters of biaxially stressed Si1−yCy alloys on Si (0 0 1)

H. Osten, A. Demkov, J. P. Liu, 2006 .

Co silicide formation on epitaxial Si1−yCy/Si (001) layers

H. Osten, M. Eizenberg, A. Berner, 2000 .

Wider latitude for sophisticated devices by incorporating carbon into crystalline Si or SiGe

B. Heinemann, H. Osten, H. Rücker, 2001 .

Grazing-incidence X-ray diffraction investigation of the coincidence site lattice of the Ge/Si(001) system

H. Osten, Jan Schmidt, Y. Barnscheidt, 2020, Journal of applied crystallography.

Growth and properties of strained Si1-x-yGexCy layers

H. Osten, H. Rücker, S. Jain, 1995 .

The NMR isotope shift in polyatomic molecules. Estimation of the dynamic factors

H. Osten, C. Jameson, 1984 .

The additivity of NMR isotope shifts

H. Osten, C. Jameson, 1984 .

Deuterium‐induced 19F isotope shifts in fluoroethenes

H. Osten, C. Jameson, N. Craig, 1985 .

Systematic trends in the variation of 19F nuclear magnetic shielding with bond extension in halomethanes

H. Osten, C. Jameson, 1985 .

Applications of the reduced isotope shift to general estimation of one-bond isotope shifts in NMR

H. Osten, C. Jameson, H. Osten, 1985 .

Rovibrational averaging of molecular magnetic properties of CH3F, CH2F2, and CHF3

H. Osten, C. Jameson, 1985 .

The mean bond displacements and the derivatives of 19F shielding in CF2=CFX and CF2=CH2

H. Osten, C. Jameson, 1985 .

Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si (111) heterostructures

H. Osten, S. Mahapatra, J. Rathore, 2018, Journal of Applied Physics.

Band gap and band discontinuities at crystalline Pr2O3/Si(001) heterojunctions

H. Osten, J. P. Liu, H. Müssig, 2002 .

Dependence of the interface sharpness of a Ge single quantum well on molecular‐beam‐epitaxial growth conditions

H. Osten, E. Bugiel, G. Lippert, 1994 .

Ion Implantation for Photovoltaic Applications: Review and Outlook for n-Type Silicon Solar Cells

H. Osten, F. Haase, R. Peibst, 2016, 2016 21st International Conference on Ion Implantation Technology (IIT).

Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide

H. Osten, E. Bugiel, A. Laha, 2009, Nanotechnology.

Photonic crystals for highly efficient silicon single junction solar cells

H. Osten, S. John, R. Brendel, 2021, Solar Energy Materials and Solar Cells.

Quadrupolar spin relaxation due to electric field gradients induced by vibrations and collisions

H. Osten, C. Jameson, 1986 .

Crystal structure and strain state of molecular beam epitaxial grown Gd2O3 on Si(1 1 1) substrates: a diffraction study

H. Osten, A. Laha, W. Braun, 2009 .

Influence of the boron emitter profile on VOC and JSC losses in fully ion implanted n‐type PERT solar cells

H. Osten, R. Brendel, T. Dullweber, 2015 .

The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric

H. Osten, A. Laha, M. Eizenberg, 2014 .

Epitaxial Lanthanide Oxide based Gate Dielectrics

H. Osten, A. Laha, A. Fissel, 2009 .

Growth of crystalline praseodymium oxide on silicon

H. Osten, J. P. Liu, E. Bugiel, 2002 .

Epitaxial growth of praseodymium oxide on silicon

H. Osten, J. P. Liu, E. Bugiel, 2001 .

Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy

H. Osten, D. Tetzlaff, T. Wietler, 2018, Semiconductor Science and Technology.

Integration of thin film of metal-organic frameworks in metal-insulator-semiconductor capacitor structures

H. Osten, L. Heinke, L. Montañez, 2018, Microporous and Mesoporous Materials.

Supersaturated carbon in silicon and silicon/germanium alloys

H. Osten, 1996 .

Local structure of strain-compensated epitaxial Si1−x−yGexCy layers on Si(001) grown with molecular beam epitaxy

H. Osten, H. Rücker, M. Methfessel, 1995 .

Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties

H. Osten, B. Ai, A. Laha, 2011 .

Growth of crystalline Gd2O3 thin films with a high-quality interface on Si(100) by low-temperature H2O-assisted atomic layer deposition.

H. Osten, E. Bugiel, A. Laha, 2010, Journal of the American Chemical Society.

Integration of MoSe2 Monolayers with Epitaxial High-Κ Gd2O3 Substrate: Implication for High-Quality Emission and Modulation of Excitonic Quasiparticles

H. Osten, A. Fissel, S. Dhara, 2022, ACS Applied Nano Materials.

Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3

A. Stesmans, H. Osten, A. Laha, 2009 .

Band offsets between Si and epitaxial rare earth sesquioxides (RE2O3, RE=La,Nd,Gd,Lu): Effect of 4f-shell occupancy

A. Stesmans, H. Osten, L. Edge, 2008 .

Stability of crystalline Gd2O3 thin films on silicon during post-growth processing

H. Osten, E. Bugiel, D. Tetzlaff, 2009, 2009 3rd International Conference on Signals, Circuits and Systems (SCS).

Stability of crystalline Gd2O3 thin films on silicon during rapid thermal annealing

H. Osten, E. Bugiel, M. Lemme, 2008 .

Impact of border traps in ultrathin metal-organic framework Cu3(BTC)2 based capacitors

H. Osten, J. Caro, L. Montañez, 2019, Microporous and Mesoporous Materials.

Schottky barrier inhomogeneities at contacts to carbon-containing silicon/germanium alloys

H. Osten, F. Meyer, M. Barthula, 2002 .

Effect of oxide structure on the Fermi-level pinning at metal/Gd2O3 interfaces

H. Osten, M. Eizenberg, M. Czernohorsky, 2008 .

Si Nanostructures Embedded into Crystalline Rare Earth Oxide Matrix for Opto and Nano Electronic Devices

H. Osten, A. Laha, A. Fissel, 2010, 2010 Fourth International Conference on Quantum, Nano and Micro Technologies.

Ion implantation of boric molecules for silicon solar cells

H. Osten, E. Bugiel, R. Brendel, 2015 .

Fabrication of well-defined individual dislocations in SiGe as a novel one-dimensional system

H. Osten, E. Bugiel, M. Lewerenz, 2007 .

Modification of growth modes in lattice-mismatched epitaxial systems: Si/Ge

H. Osten, 1994 .

Carbon-mediated growth of thin, fully relaxed germanium films on silicon

H. Osten, E. Bugiel, D. Tetzlaff, 2012 .

Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy

H. Osten, E. Bugiel, A. Laha, 2010 .

Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd2O3 on Si(001).

H. Osten, Jan Schmidt, A. Fissel, 2019, Acta crystallographica Section B, Structural science, crystal engineering and materials.

Two‐dimensional lattice‐mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant

H. Osten, E. Bugiel, J. Klatt, 1992 .

Epitaxial praseodymium oxide: a new high-k dielectric

H. Osten, E. Bugiel, P. Zaumseil, 2001, Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537).

Embedding silicon nanoclusters into epitaxial rare earth oxide for nonvolatile memory applications

H. Osten, E. Bugiel, A. Laha, 2008 .

Structural, optical, and interface properties of sputtered AlN thin films under different hydrogen dilution conditions

J. A. Töfflinger, A. Kribus, H. Osten, 2018 .

Emitter recombination current densities of boron emitters with silver/aluminum pastes

H. Osten, R. Brendel, R. Peibst, 2014, 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).

Band offsets and electron transport calculation for strained Si1-x-yGexCy/Si heterostructures

H. Osten, P. Dollfus, S. Galdin, 2001 .

Epitaxial Gd2O3 on strained Si1−xGex layers for next generation complementary metal oxide semiconductor device application

H. Osten, A. Laha, A. Fissel, 2013 .

Antimony-mediated growth of epitaxial Ge1−yCy layers on Si(001)

H. Osten, E. Bugiel, P. Zaumseil, 1994 .

In situ monitoring of strain relaxation during antimony‐mediated growth of Ge and Ge1−y Cy layers on Si(001) using reflection high energy electron diffraction

H. Osten, J. Klatt, 1994 .

Theoretical Aspects of Isotope Effects on Nuclear Shielding

H. Osten, C. Jameson, H. Jörg Osten, 1986 .

Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations

Andre Stesmans, Apurba Laha, Andreas Fissel, 2007 .

Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbon

H. Osten, E. Bugiel, P. Zaumseil, 1994 .

Crystallization of amorphous Si0.5Ge0.5 films studied by means of in-situ X-ray diffraction and in-situ transmission electron microscopy

H. Osten, P. Zaumseil, M. Capitán, 1999 .

Thin films of CoSi 2 on Si 1-y c y substrate layers

H. Osten, S. Teichert, D. Sarkar, 1999 .

Carbon-mediated epitaxy of SiGe virtual substrates on Si(001)

H. Osten, Jan Schmidt, D. Tetzlaff, 2018, Semiconductor Science and Technology.

Carbon-containing heteroepitaxial silicon and silicon/germanium thin films on Si(001)

H. Osten, 2002 .

MBE growth and properties of supersaturated, carbon-containing silicon/germanium alloys on Si(001)

H. Osten, 2000 .

Si 1−x−y Ge x C y alloys: Growth and properties of a new semiconducting material

H. Osten, 1999 .

Band-gap changes and band offsets for ternary Si1−x−yGexCy alloys on Si(001)

H. Osten, H. Jörg Osten, 1998 .

Carbon-containing group IV heterostructures on Si: properties and device applications

D. Knoll, B. Heinemann, P. Schley, 1998 .

Charge transport in strained Si1−yCy and Si1−x−yGexCy alloys on Si(001)

H. Osten, P. Gaworzewski, 1997 .

Self-organization during Si1−yCy alloy layer growth on Si(001) using homogeneous coevaporation

H. Osten, E. Bugiel, P. Zaumseil, 1997 .

Relaxed Si1−xGex/Si1−x−yGexCy buffer structures with low threading dislocation density

E. Bugiel, H. J. Osten, H. Osten, 1997 .

Infrared spectroscopy of strained Si1−yCy alloys (0≤y≤0.015) grown on silicon

G. Fischer, H. Osten, P. Zaumseil, 1997 .

Ternary SiGeC alloys: growth and properties of a new semiconducting material

H. Osten, P. Zaumseil, G. Lippert, 1997 .

Critical points of Si1−yCy and Si1−x−yGexCy layers strained pseudomorphically on Si(001)

H. Osten, M. Weidner, M. Eichler, 1996 .

SiGeC materials

H. Osten, 1996, Proceedings of Semiconducting and Semi-Insulating Materials Conference.

Strain-stabilized structures on silicon grown with MBE

H. Osten, H. Rücker, E. Bugiel, 1995 .

Structural characterization of SinC δ layers embedded in a silicon matrix

H. Osten, E. Bugiel, S. Ruvimov, 1995 .

Backscattering analysis of Si1−yCy layers using the 12C(4He,4He) 12C resonance at 4.265 MeV

H. Osten, P. Zaumseil, M. Zinke–Allmang, 1995 .

The influence of surfactants on growth modes in molecular‐beam epitaxy: The growth of germanium layers on Si(100)

H. Osten, J. Klatt, G. Lippert, 1992 .

Comparative analysis of minority carrier transport in npn bipolar transistors with Si, Si1−xGex, and Si1−yCy base layers

Bernd Heinemann, P. Schley, Dieter Knoll, 2000 .

Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy

H. Osten, E. Bugiel, D. Tetzlaff, 2013 .

Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates

H. Osten, A. Laha, A. Fissel, 2010 .

Influence of boron on the initial stages of Si molecular beam epitaxy on Si(111) studied by reflection high-energy electron diffraction

H. Osten, A. Fissel, J. Krügener, 2009 .

Considerations about the critical thickness for pseudomorphic Si1-xGex growth on Si(001)

H. Osten, E. Bugiel, H. Zeindl, 1994 .

Rovibrational effects on nuclear shielding of apex nuclei in bent molecules

H. Osten, C. Jameson, 1985 .

In search of optimum conditions for the growth of sharp and shallow B-delta markers in Si by molecular beam epitaxy

H. Osten, K. Wittmaack, J. Griesche, 2000 .

Impact of low carbon concentrations on the electrical properties of highly boron doped SiGe layers

R. Sorge, Gunther Lippert, H. J. Osten, 1997 .

Influence of (7×7)–“1×1” phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si (111)

H. Osten, A. Fissel, J. Krügener, 2015 .

Impact of boron on the step-free area formation on Si(111) mesa structures

H. Osten, A. Fissel, Ayan Roy Chaudhuri, 2015 .

Comparison of Experimental Emitter Saturation Current Densities and Simulated Defect Densities of Boron-Implanted Emitters

H. Osten, R. Peibst, F. Kiefer, 2016, 2016 21st International Conference on Ion Implantation Technology (IIT).

Electrical and Structural Analysis of Crystal Defects After High-Temperature Rapid Thermal Annealing of Highly Boron Ion-Implanted Emitters

H. Osten, F. A. Wolf, E. Bugiel, 2015, IEEE Journal of Photovoltaics.

Impact of surface phase coexistence on the development of step-free areas on Si(111)

H. Osten, A. Fissel, J. Krügener, 2015, Frontiers of Materials Science.

Morphology of mesa surfaces on Si(111) prepared by molecular beam epitaxy at temperatures around the (7 × 7)-“1 × 1” surface phase transition

H. Osten, A. Fissel, J. Krügener, 2013 .

Optical transitions in strained Si1−yCy layers on Si(001)

H. Osten, M. Weidner, M. Eichler, 1994 .

Atomic Layer Deposition of Gd2O3 and Dy2O3: A Study of the ALD Characteristics and Structural and Electrical Properties

H. Osten, E. Bugiel, A. Laha, 2012 .

Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001)

H. Osten, J. Dabrowski, A. Fissel, 2002 .

Measurement of stress and relaxation in Si1−xGex layers by Raman line shift and x‐ray diffraction

H. Osten, E. Bugiel, P. Zaumseil, 1993 .

Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si (111) heterostructures

H. Osten, S. Mahapatra, J. Rathore, 2018, Journal of Applied Physics.

The dependence of the 13C and the 1H nuclear magnetic shielding on bond extension in methane

H. Osten, C. Jameson, 1984 .

Epitaxial Ge-Gd2O3 on Si(111) substrate by sputtering for germanium-on-insulator applications

H. Osten, S. Mahapatra, A. Laha, 2021 .

Towards controlled molecular beam epitaxial growth of artificially stacked Si: Study of boron adsorption and surface segregation on Si(1 1 1)

H. Osten, A. Fissel, J. Krügener, 2011 .

Role of boron and (√3 × √3)‐B surface defects on the growth mode of Si on Si(111): A photoemission and electron diffraction study

Jan Krügener, Andreas Fissel, Dominik Schwendt, 2010 .

Molecular beam epitaxial growth of Si on heavily boron-doped Si(111) surface: From initial stages to the growth of Si polytypes

H. Osten, E. Bugiel, A. Fissel, 2008, 2008 Conference on Optoelectronic and Microelectronic Materials and Devices.

Analysis of thin germanium-rich SiGe layers on Si(1 1 1) substrates grown by carbon-mediated epitaxy

H. Osten, Jan Schmidt, Hannah Genath, 2020 .

Effective control on flat band voltage of epitaxial lanthanide oxide based metal oxide semiconductor capacitors by interfacial carbon

H. Osten, A. Laha, A. Fissel, 2013 .

Suppressing of island formation in surfactant‐controlled solid phase epitaxy of germanium on Si(100)

H. Osten, E. Bugiel, J. Klatt, 1992 .

Atomic structure and lattice dynamics of strain-compensated Si1-x-yGexCy layers

H. Osten, H. Rücker, P. Zaumseil, 1994 .

Kinetic suppression of islanding in impurity‐mediated heteroepitaxial growth of germanium on silicon

H. Osten, 1994 .

Surfactant‐mediated growth of germanium on silicon (001) with submonolayer coverage of Sb and Te

H. Osten, E. Bugiel, J. Klatt, 1993 .

Van der Waals epitaxy of thick Sb, Ge, and Ge/Sb films on mica

H. Osten, J. Klatt, G. Lippert, 1992 .

SUBSTITUTIONAL CARBON INCORPORATION IN EPITAXIAL SI1-YCY ALLOYS ON SI(001)GROWN BY MOLECULAR BEAM EPITAXY

H. J. Osten, J. Griesche, H. Osten, 1999 .

The growth of nanometer Si/SiGe/Si quantum well wires with local molecular beam epitaxy in dependence on the shadow mask geometry

D. Knoll, H. Osten, J. Klatt, 1996 .

Impurity‐mediated growth and characterization of thin pseudomorphic germanium layers in silicon

H. Osten, E. Bugiel, B. Dietrich, 1994 .

Surfactant-mediated growth of germanium on Si(100) by MBE and SPE

H. Osten, E. Bugiel, J. Klatt, 1993 .

Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001): Application to praseodymium oxide

H. Osten, E. Bugiel, A. Fissel, 2003 .

X-ray photoelectron spectroscopic evaluation of valence band offsets for strained Si1−xGex, Si1−yCy, and Si1−x−yGexCy on Si(001)

H. J. Osten, H. Osten, Myeongcheol Kim, 1997 .

Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application

H. Osten, D. Saha, A. Laha, 2019, Applied Physics Letters.

Long-Term Stability of Epitaxial (Nd1–xGdx)2O3 Thin Films Grown on Si(001) for Future CMOS Devices

H. Osten, A. Laha, A. Fissel, 2016, IEEE Transactions on Electron Devices.

Ultraviolet photoelectron spectroscopic study of boron adsorption and surface segregation on Si(111)

H. Osten, A. Fissel, J. Kruegener, 2011 .

Effective passivation of slow interface states at the interface of single crystalline Gd2O3 and Si(100)

David-Wei Zhang, Qingqing Sun, H. Osten, 2008 .

Introducing crystalline rare‐earth oxides into Si technologies

H. Osten, E. Bugiel, A. Laha, 2008 .

Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application

H. Osten, A. Laha, A. Fissel, 2007 .

Impact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high-K application

H. Osten, A. Laha, A. Fissel, 2006 .

Enhanced Electrical Properties of Carbon Doped Epitaxial Gd2O3 Thin Films on Si Substrates

H. Osten, A. Laha, A. Fissel, 2011 .

Enhanced dielectric properties of nitrogen doped epitaxial Gd2O3 thin films on Si

H. Osten, A. Fissel, Ayan Roy Chaudhuri, 2014 .

MBE-grown Si and Si1−xGex quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device

H. Osten, S. Manna, S. Ray, 2013, Nanotechnology.

Epitaxial multi-component rare-earth oxide: A high-k material with ultralow mismatch to Si

H. Osten, E. Bugiel, A. Laha, 2010 .

MBE growth and properties of epitaxial metal oxides for high-κ dielectrics

H. Osten, E. Bugiel, A. Fissel, 2005 .

Improvement of the SRH bulk lifetime upon formation of n-type POLO junctions for 25% efficient Si solar cells

Jan Krügener, Robby Peibst, Rolf Brendel, 2017 .

Ion-Implanted Epitaxially Grown Gd2O3 on Silicon with Improved Electrical Properties

H. Osten, G. Lilienkamp, T. Wietler, 2020, Journal of Electronic Materials.

The mean bond displacements in O=CF2 and their effect on 19F nuclear magnetic shielding

H. Osten, C. Jameson, 1984 .

Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd2O3

H. Osten, M. Eizenberg, Y. Amouyal, 2016 .

Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si(100)

H. Osten, A. Fissel, Ayan Roy Chaudhuri, 2014 .

Epitaxial lanthanide oxide thin films on Si for high-k gate dielectric application: Growth optimization and defect passivation

H. J. Osten, H. Osten, A. Fissel, 2017 .

Erratum: “Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si(100)” [Appl. Phys. Lett. 104, 012906 (2014)]

H. Osten, A. Fissel, Ayan Roy Chaudhuri, 2015 .

Growth and characterization of crystalline gadolinium oxide on silicon carbide for high-K application

H. Osten, A. Fissel, M. Czernohorsky, 2006 .

Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1 nm for high-K application

Apurba Laha, Eberhard Bugiel, Andreas Fissel, 2006 .

Initial stages of praseodymium oxide film formation on Si( 0 0 1 )

H. Osten, J. P. Liu, J. Dabrowski, 2002 .

Influence of interstitial carbon defects on electron transport in strained Si1−yCy layers on Si(001)

H. J. Osten, J. Griesche, H. Osten, 2000 .

Atomic layer deposition of Er2O3 thin films from Er tris-guanidinate and water: process optimization, film analysis and electrical properties

H. Osten, A. Devi, Ke Xu, 2013 .

Investigation of band offsets and direct current leakage properties of nitrogen doped epitaxial Gd2O3 thin films on Si

H. Osten, A. Fissel, Ayan Roy Chaudhuri, 2013 .

A Novel Thin Buffer Concept for Epitaxial Growth of Relaxed SiGe Layers with Low Threading Dislocation Density

H. Osten, C. C. Wong, D. Sohn, 2005 .

High-K Dielectrics: The Example of Pr2O3

H. Osten, J. Dabrowski, H. Müssig, 2004 .

Growth of epitaxially stabilized, non-cubic Gd 2 O 3 on silicon(1 1 1) substrates

H. Osten, T. Wietler, M. Moellers, 2017 .

Trap-assisted conduction in Pt-gated Gd2O3/Si capacitors

H. Osten, M. Eizenberg, P. Lenahan, 2011 .

Strain induced interface roughness of Si1−xCx δ layers on Si(001)

H. Osten, J. Falta, G. Materlik, 1997 .

Formation and properties of high-dose nitrogen implanted epitaxially grown Gd2O3 on silicon

H. Osten, Jan Schmidt, D. Tetzlaff, 2016 .

Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping

Andreas Fissel, H. J. Osten, H. Osten, 2013 .

Stability and transport properties of microcrystalline Si1−xGex films

H. Osten, P. Zaumseil, P. Werner, 1999 .

Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide

H. Osten, A. Fissel, M. Czernohorsky, 2006 .

Interface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on Silicon

H. Osten, V. Lysenko, Y. Gomeniuk, 2011 .

Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application

H. Osten, A. Fissel, M. Czernohorsky, 2007 .

Epitaxial Growth and Properties of Silicon on Crystalline Rare-Earth-Metal Oxide for SOI-Applications

H. Osten, E. Bugiel, A. Laha, 2009 .

Impact of oxygen supply during growth on the electrical properties of crystalline Gd2O3 thin films on Si(001)

M. Czernohorsky, Eberhard Bugiel, Andreas Fissel, 2006 .

Growth of epitaxial lanthanide oxide based gate dielectrics

H. Osten, E. Bugiel, A. Laha, 2009, 2009 3rd International Conference on Signals, Circuits and Systems (SCS).

Integration of functional epitaxial oxides into silicon: From high-K application to nanostructures

H. Osten, E. Bugiel, A. Laha, 2007 .

Crystalline Oxides on Silicon

H. Osten, 2001, Science.

INTERFACE FORMATION DURING EPITAXIAL GROWTH OF BINARY METAL OXIDES ON SILICON

H. Osten, E. Bugiel, A. Fissel, 2006 .

TEM investigations of epitaxial high-α dielectrics on silicon

H. Osten, E. Bugiel, A. Fissel, 2005 .

Electrical characterization of ultrathin single crystalline Gd2O3/Si(100) with Pt top electrode

Qingqing Sun, H. Osten, S. Ding, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Observation of near interface oxide traps in single crystalline Nd2O3 on Si(111) by quasistatic C-V method

Qing-Qing Sun, Apurba Laha, Shi-Jin Ding, 2008 .

Investigation of the temperature stability of germanium-rich SiGe layers on Si(111) substrates

H. Osten, B. Wolpensinger, H. Genath, 2022, Thin Solid Films.

Investigation of Germanium Quantum-well Light Sources References and Links

C. O. Chui, S. Laux, G. Sarid, 2022 .