H. Richter

发表

An equilibrium model for buried SiGe strained layers

A. Fischer, H. Osten, H. Richter, 2000 .

Cu precipitation in oxidized wafers with and without a Ge_xSi_1−x heteroepitaxial layer

H. Richter, G. Kissinger, G. Morgenstern, 1993 .

Angle dependence of the Hall effect in HgBa 2 CaCu 2 O 6 thin films

H. Richter, H. Sturm, J. Durrell, 2006, cond-mat/0604352.

Angle-dependence of the Hall effect in Hg-Ba-Ca-Cu-O thin films

H. Richter, D. Bäuerle, H. Sturm, 2006 .

Computer Modelling of SiO2 Precipitation in Cz-Si Doped with Nitrogen

H. Richter, V. Litovchenko, V. Akhmetov, 2003 .

Mechanical properties of nitrogen-doped CZ silicon crystals

H. Richter, A. Fischer, J. Reif, 2002 .

Characterization of nanotransistors in a semiempirical model

H. Richter, U. Wulf, J. Kučera, 2016 .

Resistivity, Hall effect, and anisotropic superconducting coherence lengths of HgBa2CaCu2O6 thin films with different morphology

H. Richter, J. Durrell, J. Pedarnig, 2020, Superconductor Science and Technology.

Resistivity, Hall effect, and anisotropic superconducting coherence lengths of HgBa$_2$CaCu$_2$O$_{6+\delta}$ thin films with different morphology

H. Richter, J. Durrell, J. Pedarnig, 2020, 2012.12539.

On the Gettering Efficiency of Crystal Defects in Silicon

H. Richter, E. Bugiel, M. Kittler, 1984, July 16.

The gettering efficiency of a direct bonded interface

H. Richter, G. Kissinger, G. Morgenstern, 1993 .

Ultrafast UV‐laser‐induced oxidation of silicon: Control and characterization of the Si‐SiO2 interface

H. Richter, G. Margaritondo, T. Orlowski, 1984 .

Ultrafast laser‐induced oxidation of silicon: A new approach towards high quality, low‐temperature, patterned SiO2 formation

H. Richter, T. Orlowski, 1984 .

Ultrafast UV-Laser Induced Oxidation of Silicon

H. Richter, T. Orlowski, 1983 .

Dielectric function of amorphous silicon films, its oxidation and voids, studied by electron spectroscopy

H. Richter, B. Schröder, J. Geiger, 1981 .

Defect engineering in SiGe heterostructures

D. Kruger, A. Fischer, H. Richter, 1996, 1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings.

On plastic flow and work hardening in strained layer heterostructures

A. Fischer, H. Richter, 1994 .

Combination of optical measurement and precipitation theory to overcome the obstacles of detection limits

H. Richter, W. Ammon, T. Grabolla, 2006 .

Internal oxidation of vacancy agglomerates in Czochralski silicon wafers during high-temperature anneals

H. Richter, J. Vanhellemont, D. Gräf, 1998 .

Energy losses of fast electrons in multi-layer systems

H. Richter, J. Geiger, 1981 .

Laser Induced Chemical Reactions at the Al III-V Semiconductor Interface

H. Richter, L. Brillson, 1985 .

On the intrinsic gettering in Fe‐contaminated CzSi

H. Richter, M. Kittler, W. Seifert, 1985 .

Residual Stress Distribution and Silicon Phase Transformation Induced by Rockwell Indentation at Different Temperatures, Studied by Means of Micro-Raman Spectroscopy

H. Richter, W. Seifert, J. Reif, 2003 .

Composition Dependence of Hardness and Moduli in GeSi/Si-Heterostructures Measured by Nanoindentation

H. Richter, B. Tillack, T. Morgenstern, 1994 .

Masked ion beam irradiation of high-temperature superconductors: patterning of nano-size regions with high point-defect density

C. Grigoropoulos, H. Richter, D. Bäuerle, 2009 .

Influence of Nitrogen on Dislocation Mobility in Czochralski Silicon

H. Richter, M. Badylevich, V. Orlov, 2003 .

Titanium–silicon and silicon dioxide reactions controlled by low temperature rapid thermal annealing

H. Richter, L. Brillson, R. T. Fulks, 1986 .

Determination of low concentrations of N and C in CZ-Si by precise FT-IR spectroscopy

H. Richter, N. Inoue, V. Akhmetov, 2006 .

Pressure‐induced transformations of nitrogen implanted into silicon

H. Richter, V. Akhmetov, A. Misiuk, 2006 .

FTIR spectroscopic system with improved sensitivity

H. Richter, V. Akhmetov, 2006 .

Annealing Behaviour of New Nitrogen Infrared Absorption Peaks in CZ Silicon

H. Richter, N. Inoue, H. Ono, 2005 .

Control of titanium‐silicon and silicon dioxide reactions by low‐temperature rapid thermal annealing

H. Richter, L. Brillson, H. Plas, 1985 .

Angle dependence of the Hall effect in HgBa 2 CaCu 2 O 6 thin films

H. Richter, H. Sturm, J. Durrell, 2006, cond-mat/0604352.

Analytical Modeling of the Interaction of Vacancies and Oxygen for Oxide Precipitation in RTA Treated Silicon Wafers

H. Richter, J. Dabrowski, W. Ammon, 2007 .

A Method for Studying the Grown‐In Defect Density Spectra in Czochralski Silicon Wafers

H. Richter, D. Gräf, U. Lambert, 1997 .

Copper silicide precipitation influenced by the strain of a Ge0.02Si0.98 heteroepitaxial layer

H. Richter, G. Kissinger, G. Morgenstern, 1994 .

Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures

H. Richter, D. Gerthsen, D. Litvinov, 1999 .

Stacking-fault-induced pairs of localizing centers in ZnSe quantum wells

H. Richter, D. Gerthsen, D. Litvinov, 2000 .

Near-field photoluminescence imaging of single defects in a ZnSe quantum well structure at low temperatures

M. Wegener, H. Richter, D. Lüerßen, 2000, Quantum Electronics and Laser Science Conference.

Observation of stacking faults and prismatic punching systems in silicon by light scattering tomography

H. Richter, C. Claeys, J. Vanhellemont, 1996 .

A contribution to oxide precipitate nucleation in nitrogen doped silicon

H. Richter, T. Müller, G. Kissinger, 2006 .

Investigation of Ostwald ripening in nitrogen doped Czochralski silicon

H. Richter, W. Ammon, A. Huber, 2005 .

Influence of Residual Point Defect Supersaturation on the Formation of Grown‐In Oxide Precipitate Nuclei in CZ‐Si

H. Richter, J. Vanhellemont, E. Dornberger, 1998 .

Oxide precipitates in annealed nitrogen-doped 300mm CZ-SI

H. Richter, V. Akhmetov, T. Müller, 2002 .

Grown‐in Oxide Precipitate Nuclei in Czochralski Silicon Substrates and Their Role in Device Processing

H. Richter, J. Vanhellemont, W. Ammon, 1999 .

Gettering and deffect engineering in semiconductor technology : GADEST '91 : proceedings of the 4th International Autumn Meeting held in Chossewitz, near Frankfurt(Oder), Germany, October 13-19 1991

H. Richter, M. Kittler, H. Richter, 1991 .

FTIR Study of Precipitation of Implanted Nitrogen in CZ-Si Annealed under High Hydrostatic Pressure

H. Richter, V. Akhmetov, A. Misiuk, 2005 .

Elastic stress relaxation in SiGe epilayers on patterned Si substrates

A. Fischer, H. Richter, 1994 .

Elastic misfit stress relaxation in heteroepitaxial SiGe/Si mesa structures

A. Fischer, H. Richter, 1992 .

Laser‐induced chemical reactions at the Al/III‐V compound semiconductor interface

H. Richter, R. Daniels, G. Margaritondo, 1986 .

Slip-free processing of 300 mm silicon batch wafers

H. Richter, P. Kücher, A. Fischer, 2000 .

Acceptorlike electron traps and thermally reversible barrier heights for Al on UHV‐cleaved (110) InP

H. Richter, L. Brillson, J. Slowik, 1985 .

Elastic and Plastic Stress Relaxation in Stripes and Circular Mesas

H. Richter, A. Harker, K. Pinardi, 1995 .

Cathodoluminescence spectroscopy of metal–semiconductor interface structures

H. Richter, L. Brillson, J. Shaw, 1988 .

Cathodoluminescence spectroscopy studies of laser-annealed metal-semiconductor interfaces

H. Richter, Y. Shapira, L. Brillson, 1985 .

Stepwise equilibrated graded GexSi1−x buffer with very low threading dislocation density on Si(001)

H. Richter, T. Morgenstern, G. Kissinger, 1995 .

Ion beam irradiation of high-temperature superconductors: From nano-size defects to the fabrication of nanodevices

H. Richter, D. Bauerle, P. Bauer, 2008, 2008 2nd IEEE International Nanoelectronics Conference.

Analysis of the generation of the misfit dislocations during the boron prediffusion in silicon

Florin Gaiseanu, Gudrun Kissinger, D. Kruger, 1998, Advanced Lithography.