H. Baudry

High performance 0.25 /spl mu/m SiGe and SiGe:C HBTs using non selective epitaxy

D. Dutartre, M. Laurens, A. Monroy, 2001, Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212).

A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters

Alain Chantre, Daniel Gloria, M. Laurens, 1999 .