O. Kermarrec

发表

High performance 0.25 /spl mu/m SiGe and SiGe:C HBTs using non selective epitaxy

D. Dutartre, M. Laurens, A. Monroy, 2001, Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212).

Localized ultra-thin GeOI: An innovative approach to germanium channel MOSFETs on bulk Si substrates

G. Ghibaudo, T. Skotnicki, S. Monfray, 2008, 2008 IEEE International Electron Devices Meeting.

Probing photonic crystals on silicon-on-insulator with Ge/Si self-assembled islands as an internal source

O. Kermarrec, Y. Campidelli, D. Bensahel, 2006 .

Enhanced photoluminescence of heavily n-doped germanium

O. Kermarrec, D. Bensahel, J. Damlencourt, 2009 .

A 150GHz f/sub T//f/sub max/ 0.13/spl mu/m SiGe:C BiCMOS technology

F. Leverd, R. Beerkens, M. Laurens, 2003, 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440).

Silicon-on-insulator and SiGe waveguide photodetectors with Ge/Si self-assembled islands

Yves Campidelli, Isabelle Sagnes, Gilles Patriarche, 2003 .

High-quality factor photonic crystal nanocavities probed with SiGe/Si self-assembled islands

O. Kermarrec, Y. Campidelli, D. Bensahel, 2007, 2007 4th IEEE International Conference on Group IV Photonics.

Selective growth of tensily strained Si1-yCy films on patterned Si substrates

F. Hüe, O. Kermarrec, Y. Campidelli, 2009 .

Low-temperature RPCVD of Si, SiGe alloy, and Si1−yCy films on Si substrates using trisilane (Silcore®)

O. Kermarrec, Y. Campidelli, D. Bensahel, 2009 .

Two-dimensional photonic crystals with germanium on insulator obtained by a condensation method

O. Kermarrec, D. Bensahel, J. Damlencourt, 2008 .

PD-SOI CMOS and SiGe BiCMOS Technologies for 5G and 6G communications

P. Chevalier, O. Kermarrec, D. Gloria, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

Light emission from Ge/Si self-assembled islands in microcavities

O. Kermarrec, Y. Campidelli, D. Bensahel, 2004, First IEEE International Conference on Group IV Photonics, 2004..

Oxidation Of Si / nc-Ge / Si Heterostructures For Non Volatile Memory Applications

O. Kermarrec, D. Bensahel, I. Berbezier, 2003 .

Determination of strain within Si1-yCy layers grown by CVD on a Si substrate

F. Hüe, N. Cherkashin, O. Kermarrec, 2007 .

Electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum-cascade structures based on a bound-to-continuum transition

J. Faist, I. Sagnes, O. Kermarrec, 2002 .

Structural properties of relaxed Ge buffer layers on Si(0 0 1): effect of layer thickness and low temperature Si initial buffer

O. Kermarrec, Y. Campidelli, D. Bensahel, 2004 .

Strain compensated Si/Si0.2Ge0.8 quantum cascade structures grown by low temperature molecular beam epitaxy

O. Kermarrec, Y. Campidelli, D. Bensahel, 2003 .

Bandstructure analysis of strain compensated Si/SiGe quantum cascade structures

O. Kermarrec, T. Fromherz, E. Müller, 2005 .

Anticrossing between heavy-hole states in Si0.2Ge0.8/Si-coupled quantum wells grown on Si0.5Ge0.5 pseudosubstrate

J. Faist, I. Sagnes, O. Kermarrec, 2004 .

Strain-compensated Si/Si0.2Ge0.8 quantum cascade structures grown on Si0.5Ge0.5 pseudo-substrates

J. Faist, I. Sagnes, O. Kermarrec, 2003 .

Intersubband absorption performed on p-type modulation-doped Si0.2Ge0.8/Si quantum wells grown on Si0.5Ge0.5 pseudosubstrate

G. Dehlinger, J. Faist, I. Sagnes, 2002 .

Strain compensated Si/SiGe quantum well and quantum cascade on Si0.5Ge0.5 pseudosubstrate

J. Faist, O. Kermarrec, Y. Campidelli, 2003 .

Strain Compensated Si/Sige Quantum Cascade Emitters Grown On Sige Pseudosubstrates

J. Faist, I. Sagnes, O. Kermarrec, 2003 .

Intersubband quantum cascades in the Si/SiGe material system

G. Dehlinger, J. Faist, I. Sagnes, 2002 .

Direct growth of GaAs-based structures on exactly (001)-oriented Ge/Si virtual substrates: reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injection

Yves Campidelli, Isabelle Sagnes, Sophie Bouchoule, 2004 .

InGaAs/GaAs sources monolithically grown by MOVPE on Ge/Si substrates

I. Sagnes, O. Kermarrec, D. Bensahel, 2005 .

Electroluminescence of Ge'Si self-assembled quantum dots grown by chemical vapor deposition

Yves Campidelli, Isabelle Sagnes, Frédéric Aniel, 2000 .

Tensile-strain and n-type doping of germanium-on-insulator : Towards a Ge laser

I. Sagnes, O. Kermarrec, D. Bensahel, 2009, 2009 6th IEEE International Conference on Group IV Photonics.

ABAB organization of Ge∕Si(001) islands in multiplanes grown with low pressure chemical vapor deposition

O. Kermarrec, Y. Campidelli, D. Bensahel, 2004 .

Near-infrared waveguide photodetector with Ge/Si self-assembled quantum dots

Yves Campidelli, Isabelle Sagnes, Olivier Kermarrec, 2002 .

Electroabsorption spectroscopy of Ge∕Si self-assembled islands

I. Sagnes, O. Kermarrec, Y. Campidelli, 2005 .

Electromodulation of the interband and intraband absorption of Ge/Si self-assembled islands

I. Sagnes, O. Kermarrec, Y. Campidelli, 2003 .

On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates

F. Hüe, N. Cherkashin, O. Kermarrec, 2009 .

High Density Embedded PCM Cell in 28nm FDSOI Technology for Automotive Micro-Controller Applications

P. Mattavelli, P. Cappelletti, O. Kermarrec, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

Dopant Effect On NiGe Texture During Nickel Germanide Growth

O. Kermarrec, Y. Campidelli, F. Nemouchi, 2007 .

Optical recombination from excited states in Ge/Si self-assembled quantum dots

Yves Campidelli, Olivier Kermarrec, Daniel Bouchier, 2001 .

Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source.

O. Kermarrec, Y. Campidelli, D. Bensahel, 2008, Optics express.

Germanium-based nanophotonic devices: Two-dimensional photonic crystals and cavities

O. Kermarrec, Y. Campidelli, D. Bensahel, 2008 .

Two-dimensional photonic crystals with pure germanium-on-insulator

O. Kermarrec, D. Bensahel, B. Ghyselen, 2008 .

Integration of ultra-shallow junctions in sub-0.1 /spl mu/m CMOS transistors : what kind of process for a "safe" advanced technology?

T. Skotnicki, D. Lenoble, O. Kermarrec, 2001, Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C).

Ge islands and photonic crystals for Si-based photonics

O. Kermarrec, Y. Campidelli, D. Bensahel, 2005 .

Silicon–on–insulator waveguide photodetector with Ge/Si self-assembled islands

I. Sagnes, O. Kermarrec, Y. Campidelli, 2002 .

Experimental and numerical investigations on Cu/low-k interconnect reliability during copper pillar shear test

Vincent Fiori, Sebastien Gallois-Garreignot, Clement Sart, 2015, 2015 IEEE 65th Electronic Components and Technology Conference (ECTC).

Review of Some Critical Aspects of Ge and GeOI Substrates

Yves Morand, Simon Deleonibus, Laurent Clavelier, 2006 .

quantum dot formation

O. Kermarrec, Y. Campidelli, D. Bensahel, 2000 .

Material and optical properties of GaAs grown on (001) Ge/Si pseudo-substrate

L. Largeau, I. Sagnes, O. Kermarrec, 2004 .

Transport and absorption in strain-compensated Si/Si1−xGex multiple quantum well and cascade structures deposited on Si0.5Ge0.5 pseudosubstrates

J. Faist, O. Kermarrec, T. Fromherz, 2005 .

Hall mobility of narrow Si0.2Ge0.8–Si quantum wells on Si0.5Ge0.5 relaxed buffer substrates

O. Kermarrec, Y. Campidelli, D. Bensahel, 2004 .

Annealing studies of high Ge composition Si/SiGe multilayers

O. Kermarrec, Y. Campidelli, D. Bensahel, 2004 .