R. Volant

SiGe HBTs with cut-off frequency of 350 GHz

S. Jeng, B. Jagannathan, M. Khater, 2002, Digest. International Electron Devices Meeting,.

3D copper TSV integration, testing and reliability

W. Landers, R. Volant, M. Farooq, 2011, 2011 International Electron Devices Meeting.

Differentially-shielded monolithic inductors

J. Long, J. Florkey, C. Schnabel, 2003, Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003..

Low-loss microwave transmission lines and inductors implemented in a Si/SiGe HBT process

S. Subbanna, D. Harame, J. Malinowski, 1998, Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198).

Design and characterization of compact 100 nm‐scale silicon metal–oxide–semiconductor field effect transistors

J. Keller, S. Wind, R. Volant, 1992 .

On-chip interconnect for mm-wave applications using an all-copper technology and wavelength reduction

T.S.D. Cheung, K. Stein, J. Long, 2003, 2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC..

Microwave transformers, inductors and transmission lines implemented in an Si/SiGe HBT process

Lawrence E. Larson, David L. Harame, J. Malinowski, 2001 .

Lateral microwave transformers and inductors implemented in a Si/SiGe HBT process

D. Harame, J. Malinowski, M. Case, 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).

Advanced passive devices for enhanced integrated RF circuit performance

D. Harame, X. Wang, J. Johnson, 2002, 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280).