C. Riddet

发表

Predictive Simulation and Benchmarking of Si and Ge pMOS FinFETs for Future CMOS Technology

Andrew R. Brown, R. Aitken, V. Chandra, 2014, IEEE Transactions on Electron Devices.

Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors

Andrew R. Brown, Jinfeng Kang, R. Aitken, 2015, IEEE Transactions on Electron Devices.

Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green’s function techniques

Andrew R. Brown, A. Asenov, B. Cheng, 2009 .

Comparison of advanced transport models for nanoscale nMOSFETs

G. Baccarani, A. Asenov, L. Selmi, 2009, 2009 10th International Conference on Ultimate Integration of Silicon.

Monte Carlo study of current variability in UTB SOI DG MOSFETs

C. Riddet, 2008 .

Hole Mobility in Germanium as a Function of Substrate and Channel Orientation, Strain, Doping, and Temperature

A. Asenov, C. Riddet, J. Watling, 2012, IEEE Transactions on Electron Devices.

Monte Carlo simulation study of hole mobility in germanium MOS inversion layers

A. Asenov, C. Riddet, J. Mitard, 2010, 2010 14th International Workshop on Computational Electronics.

Drain current computation in nanoscale nMOSFETs: Comparison of transport models

G. Baccarani, A. Asenov, L. Selmi, 2010, 2010 27th International Conference on Microelectronics Proceedings.

Use of density gradient quantum corrections in the simulation of statistical variability in MOSFETs

Andrew R. Brown, A. Asenov, C. Riddet, 2010 .

Convergence properties of density gradient quantum corrections in 3D ensemble Monte Carlo Simulations

A. Asenov, C. Riddet, 2008, International Conference on Simulation of Semiconductor Processes and Devices.

Monte carlo simulation of the effect of interface roughness in Implant-Free Quantum-Well MOSFETs

A. Asenov, C. Riddet, E. Towie, 2013, International Conference on Ultimate Integration on Silicon.

3-D Monte Carlo Simulation of the Impact of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs

A. Asenov, C. Riddet, C. Alexander, 2007, IEEE Transactions on Nanotechnology.

Multi-Subband Ensemble Monte Carlo simulation of Si nanowire MOSFETs

A. Asenov, L. Donetti, C. Riddet, 2015, International Conference on Simulation of Semiconductor Processes and Devices.

Hierarchical Simulation of Statistical Variability: From 3-D MC With “ ab initio” Ionized Impurity Scattering to Statistical Compact Models

Asen Asenov, Binjie Cheng, Gareth Roy, 2010, IEEE Transactions on Electron Devices.

Experimental and Simulation Study of Silicon Nanowire Transistors Using Heavily Doped Channels

Asen Asenov, Douglas J. Paul, Vihar P. Georgiev, 2017, IEEE Transactions on Nanotechnology.

Impact of the statistical variability on 15nm III–V and Ge MOSFET based SRAM design

B. Cheng, A. Asenov, C. Riddet, 2013, 2013 14th International Conference on Ultimate Integration on Silicon (ULIS).

3D multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors

A. Asenov, L. Donetti, C. Riddet, 2014, International Conference on Simulation of Semiconductor Processes and Devices.

Impact of strain on the performance of Si nanowires transistors at the scaling limit: A 3D Monte Carlo/2D poisson schrodinger simulation study

A. Asenov, C. Riddet, C. Alexander, 2016, 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Metamorphosis of a nano wire: A 3-D coupled mode space NEGF study

A. Asenov, C. Riddet, S. Amoroso, 2014, 2014 International Workshop on Computational Electronics (IWCE).

Inverse Scaling Trends for Charge-Trapping-Induced Degradation of FinFETs Performance

A. Asenov, C. Riddet, Xingsheng Wang, 2014, IEEE Transactions on Electron Devices.

Experimental and simulation study of a high current 1D silicon nanowire transistor using heavily doped channels

A. Asenov, C. Riddet, V. Georgiev, 2016 .

Simulation of hole-mobility in doped relaxed and strained Ge layers

A. Asenov, C. Riddet, J. Watling, 2010 .

One-dimensional multi-subband Monte Carlo simulation of charge transport in Si nanowire transistors

A. Asenov, M. Nedjalkov, C. Riddet, 2016, 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Performance evaluation of p-channel FinFETs using 3D ensemble Monte Carlo simulation

A. Asenov, C. Riddet, E. Towie, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Simulation of “Ab Initio” Quantum Confinement Scattering in UTB MOSFETs Using Three-Dimensional Ensemble Monte Carlo

C. Riddet, C. Alexander, Scott Roy, 2011, IEEE Transactions on Electron Devices.