C. Chia

发表

Impact of Buffer Layer on Atomic Layer Deposited TiAlO Alloy Dielectric Quality for Epitaxial-GaAs/Ge Device Application

G. Dalapati, C. Chia, C. Mahata, 2013, IEEE Transactions on Electron Devices.

Source/Drain Engineering for In0.7Ga0.3As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction

Ivana, Y. Yeo, C. Chia, 2011 .

Bandgap engineering in semiconductor quantum dots

C. Chia, S. Chua, S. Tripathy, 2006 .

Group-V intermixing in InAs∕InP quantum dots

C. Chia, S. Chua, S. Tripathy, 2005 .

P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

C. Chia, D. Chi, Hongfei Liu, 2016 .

Multiplication and excess noise in AlxGa1−xAs/GaAs multilayer avalanche photodiodes

R. C. Tozer, B. K. Ng, M. Hopkinson, 2003 .

Strategies for reducing the emission wavelength of GaAs–AlAs quantum cascade lasers

M. Hopkinson, C. Chia, M. Steer, 2002 .

Thermal stability of HfOxNy gate dielectrics on p-GaAs substrates

G. Dalapati, C. Chia, C. Mahata, 2010 .

Thermal runaway and optical efficiency in InAs/GaAs quantum dot lasers

M. Hopkinson, C. Chia, M. Suryana, 2009 .

Sputter-Deposited ZrO2 Gate Dielectric on High Mobility Epitaxial-GaAs/Ge Channel Material for Advanced CMOS Applications

G. Dalapati, C. Chia, D. Chi, 2010 .

Monte Carlo Simulation of Hot Carrier Transport in Heterogeneous Ge/${\rm Al}_{x}{\rm Ga}_{1-x}{\rm As}~(0\leq x\leq 0.8)$ Multilayer Avalanche Photodiodes

G. Dalapati, C. Chia, 2013, IEEE Transactions on Electron Devices.

Avalanche Noise Characteristics of Single Al Ga As -GaAs Heterojunction APDs

R. C. Tozer, C. Chia, J. David, 2005 .

Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate

Y. Yeo, G. Dalapati, C. Chia, 2012 .

Interface characterization of epitaxial GaAs on Ge(001) substrates with high-k dielectrics for nanoscale CMOS

T. Wong, G. Dalapati, C. Chia, 2011, The 4th IEEE International NanoElectronics Conference.

Testing the upper limit of InAs/GaAs self-organized quantum dots density by fast growth rate

S. Wong, C. Chia, Yong-Wei Zhang, 2008 .

Saturated dot density of InAs∕GaAs self-assembled quantum dots grown at high growth rate

S. Wong, C. Chia, S. Chua, 2007 .

Numerical simulation of impact ionization in Ge/AlxGa1−xAs avalanche photodiode

C. Chia, 2010 .

Switching characteristics of TaOx-based one diode-one resistor for crossbar memory application

S. J. Wang, C. Chia, D. Chi, 2016, Electronic Materials Letters.

HfOxNy gate dielectric on p-GaAs

Goutam Kumar Dalapati, Aaditya Sridhara, Dongzhi Chi, 2009 .

Surface Passivation of GaAs Substrates with SiO2 Deposited Using ALD

G. Dalapati, C. Chia, C. Mahata, 2011 .

Ultrawide band quantum dot light emitting device by postfabrication laser annealing

S. L. Teo, C. Chia, S. Chua, 2007 .

λ = 8.3 µm GaAs/AlAs quantum cascade lasers incorporating InAs monolayers

M. Hopkinson, C. Chia, M. Steer, 2001 .

Selective disordering of InAs/InGaAs dots-in-a-well structure patterned with sol-gel derived SiO2 strips imprinted by soft mold technique

M. Hopkinson, C. Chia, H. Low, 2008 .

Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a “nucleation-augmented” method

C. Chia, S. Chua, Z. Miao, 2004 .

Avalanche noise characteristics of single Al/sub x/Ga/sub 1-x/As(0.3

R. C. Tozer, C. Groves, C. Chia, 2005, IEEE Journal of Quantum Electronics.

Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction

Yee-Chia Yeo, Yuanbing Cheng, Genquan Han, 2013 .

Integration of TaOx-based resistive-switching element and GaAs diode

Y. Yeo, G. Dalapati, C. Chia, 2013 .

Sputter-Deposited La2O3 on p-GaAs for Gate Dielectric Applications

G. Dalapati, C. Chia, C. Mahata, 2011 .

Interfacial characteristics and band alignments for ZrO2 gate dielectric on Si passivated p-GaAs substrate

G. Dalapati, C. Chia, D. Chi, 2007 .

Characterization of sputtered TiO2 gate dielectric on aluminum oxynitride passivated p-GaAs

G. Dalapati, C. Chia, D. Chi, 2008 .

In situ control and monitoring of photonic device intermixing during laser irradiation.

M. Hopkinson, C. Chia, M. Suryana, 2011, Optics express.

Catastrophic Optical Damage in Quantum Dot Lasers

M. Hopkinson, C. Chia, 2012 .

Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate

Kain Lu Low, Y. Yeo, C. Chia, 2013 .

Anisotropic optical response of InAs/InP quantum dot avalanche photodiodes

B. K. Ng, C. Chia, J. Dong, 2009 .

Impact ionization in AlxGa1−xAs/GaAs single heterostructures

C. Chia, J. David, P. Robson, 1998 .

Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications

G. Dalapati, C. Chia, C. Mahata, 2012 .

Surface passivation and interface properties of bulk GaAs and epitaxial-GaAs/Ge using atomic layer deposited TiAlO alloy dielectric.

G. Dalapati, C. Chia, C. Mahata, 2013, ACS applied materials & interfaces.

Role of AlxGa1−xAs buffer layer in heterogeneous integration of GaAs/Ge

Y. Yeo, G. Dalapati, C. Chia, 2011 .