P. Ward

发表

A new concept for very low energy detonators and torches

R. Bickes, M. Grubelich, J. A. Romero, 1996 .

TEM AND RBS STUDIES OF THE REGROWTH OF ARSENIC IMPLANTED POLYSILICON DUE TO AN OXIDATION DRIVE-IN

P. Ward, P. Ashburn, M. Wilson, 1982 .

Role of grain boundaries in the epitaxial realignment of undoped and As-doped polycrystalline silicon films

P. Ward, C. Spinella, E. Rimini, 1993 .

Electrical characterization of polycrystalline silicon films on Si substrates processed by rapid thermal annealing

P. Ward, C. Spinella, E. Rimini, 1993 .

Structural characterization of the epitaxial realignment of polycrystalline silicon films

P. Ward, F. Priolo, C. Spinella, 1992 .

The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2 : N2O. IV: Oxide structure and growth kinetics in the monolayer regime

P. Ward, C. Galati, L. Renna, 2005 .

Effect of fluorine implantation dose on boron thermal diffusion in silicon

Peter Ashburn, Jing Zhang, Y. Wang, 2004 .

Kinetic and structural study of the epitaxial realignment of polycrystalline Si films

P. Ward, F. Priolo, C. Spinella, 1992 .

Size effects in the epitaxial realignment of polycrystalline silicon films onto Si substrates

P. Ward, C. Spinella, E. Rimini, 1993 .