Jonghae Kim

发表

RF FRONT-END DESIGN WITH COPPER PASSIVE COMPONENTS

Jonghae Kim, J. Koeppe, M. Hsieh, 2000 .

A 44GHz differentially tuned VCO with 4GHz tuning range in 0.12 /spl mu/m SOI CMOS

Jonghae Kim, J. Plouchart, N. Zamdmer, 2005, ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..

5 GHz 11-Stage CML VCO with 40% Frequency Tuning in 0.13μm SOI CMOS

Daeik D. Kim, Jonghae Kim, Choongyeun Cho, 2009, 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

Amplifier in a 0.12µm SOI CMOS

Jean-Olivier Plouchart, Jonghae Kim, Robert A. Groves, 2004 .

A 31 GHz CML ring VCO with 5.4 ps delay in a 0.12-/spl mu/m SOI CMOS technology

Jonghae Kim, M. Sherony, J. Plouchart, 2003, ESSCIRC 2004 - 29th European Solid-State Circuits Conference (IEEE Cat. No.03EX705).

SOI CMOS SoC Technology With Low-Power mmWave Digital and RF Circuit Capability

Jean-Olivier Plouchart, Jonghae Kim, Lawrence F. Wagner, 2005 .

A 4-91-GHz Traveling-Wave Amplifier in a Standard 0.12- m SOI CMOS Microprocessor Technology

Jean-Olivier Plouchart, Liang-Hung Lu, Jonghae Kim, 2004 .

Symmetric Vertical Parallel Plate Capacitors for On-Chip RF Circuits in 65-nm SOI Technology

Choongyeun Cho, Daeik D. Kim, Jonghae Kim, 2007, IEEE Electron Device Letters.

Cross-sectional dilation mode resonator with very high electromechanical coupling up to 10% using AlN

Jonghae Kim, Sang-June Park, C. Yun, 2012, 2012 IEEE International Frequency Control Symposium Proceedings.

A European ISM band power amplifier module

Ramesh Harjani, Jonghae Kim, Ming-ta Hsieh, 2000, RAWCON 2000. 2000 IEEE Radio and Wireless Conference (Cat. No.00EX404).

An IF stage design for an ASK-based wireless telemetry system

Ramesh Harjani, Jonghae Kim, Oyvind Birkenes, 2000, 2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353).

High-Q 3D RF solenoid inductors in glass

Jonghae Kim, Jonghae Kim, Ravi Shenoy, 2014, 2014 IEEE Radio Frequency Integrated Circuits Symposium.

System Design Technology Co-Optimization for 3D Integration at <5nm nodes

R. Langari, Jonghae Kim, Biancun Xie, 2021, 2021 IEEE International Electron Devices Meeting (IEDM).

Record RF performance of 45-nm SOI CMOS Technology

B. Jagannathan, Jonghae Kim, Sungjae Lee, 2007, 2007 IEEE International Electron Devices Meeting.

High-performance three-dimensional on-chip inductors in SOI CMOS technology for monolithic RF circuit applications

Liang-Hung Lu, M. Sherony, Jonghae Kim, 2003, IEEE MTT-S International Microwave Symposium Digest, 2003.

DC-coupled IF stage design for a 900-MHz ISM receiver

Ramesh Harjani, Jae-Joon Kim, J. Harvey, 2003 .

A 243-GHz F/sub t/ and 208-GHz F/sub max/, 90-nm SOI CMOS SoC technology with low-power millimeter-wave digital and RF circuit capability

Jonghae Kim, R. Trzcinski, S. Narasimha, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

Formation of Multi-Component Boride Coatings Containing V and/or Cr and Evaluation of Their Properties

Jonghae Kim, Sang-Gi Yoon, E. Lee, 2016 .

A power-efficient 33 GHz 2:1 static frequency divider in 0.12-/spl mu/m SOI CMOS

Jean-Olivier Plouchart, Jonghae Kim, Yue Tan, 2003, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003.

A 243-GHz F/sub t/ and 208-GHz F/sub max/, 90-nm SOI CMOS SoC technology with low-power mm-wave digital and RF circuit capability

R. Trzcinski, S. Narasimha, N. Zamdmer, 2005, IEEE Transactions on Electron Devices.

High-performance and area-efficient stacked transformers for RF CMOS integrated circuits

Jonghae Kim, C. Plett, N. Zamdmer, 2003, IEEE MTT-S International Microwave Symposium Digest, 2003.