M. Aoulaiche

发表

A novel low-voltage biasing scheme for double gate FBC achieving 5s retention and 1016 endurance at 85°C

A. De Keersgieter, N. Collaert, M. Jurczak, 2010, 2010 International Electron Devices Meeting.

Assessment of SiGe quantum well transistors for DRAM peripheral applications

Naoto Horiguchi, Y. Son, Tom Schram, 2015, 2015 International Conference on IC Design & Technology (ICICDT).

Strain enhanced low-VT CMOS featuring La/Al-doped HfSiO/TaC and 10ps invertor delay

T. Schram, A. Veloso, M. Jurczak, 2008, 2008 Symposium on VLSI Technology.

Electrical characteristics of 8-/spl Aring/ EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions

R. Degraeve, L. Ragnarsson, M. Aoulaiche, 2006, IEEE Transactions on Electron Devices.

NBTI from the perspective of defect states with widely distributed time scales

T. Grasser, B. Kaczer, M. Aoulaiche, 2009, 2009 IEEE International Reliability Physics Symposium.

Temperature influence on UTBOX 1T-DRAM using GIDL for writing operation

M. Aoulaiche, E. Simoen, C. Claeys, 2012, 2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS).

Endurance of One Transistor Floating Body RAM on UTBOX SOI

M. Jurczak, P. Fazan, M. Aoulaiche, 2014, IEEE Transactions on Electron Devices.

Review of reliability issues in high-k/metal gate stacks

R. Degraeve, B. Kaczer, M. Aoulaiche, 2008, 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits.

Insights on the physical mechanism behind negative bias temperature instabilities

A. Stesmans, M. Aoulaiche, M. Heyns, 2007 .

Reaction-dispersive proton transport model for negative bias temperature instabilities

A. Stesmans, M. Aoulaiche, M. Heyns, 2005 .

Significant reduction of Positive Bias Temperature Instability in high-k/metal-gate nFETs by incorporation of rare earth metals

Anabela Veloso, Guido Groeseneken, Ben Kaczer, 2009 .

Analytical model for anomalous Positive Bias Temperature Instability in La-based HfO2 nFETs based on independent characterization of charging components

Aaron Thean, Guido Groeseneken, Ben Kaczer, 2013 .

Radiation hardness aspects of advanced FinFET and UTBOX devices

peixiong zhao, R. Reed, M. Aoulaiche, 2012, 2012 IEEE International SOI Conference (SOI).

Insight Into N/PBTI Mechanisms in Sub-1-nm-EOT Devices

R. Degraeve, B. Kaczer, G. Groeseneken, 2012, IEEE Transactions on Electron Devices.

Bias-temperature instability of Si and Si(Ge)-channel sub-1nm EOT p-MOS devices: Challenges and solutions

B. Kaczer, J. Mitard, G. Groeseneken, 2013, Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Positive and negative bias temperature instability on sub-nanometer eot high-K MOSFETs

Moonju Cho, B Kaczer, J Franco, 2010, 2010 IEEE International Reliability Physics Symposium.

Interface Trap Characterization of a 5.8-$\hbox{\rm{ \AA}}$ EOT p-MOSFET Using High-Frequency On-Chip Ring Oscillator Charge Pumping Technique

R. Degraeve, B. Kaczer, G. Groeseneken, 2011, IEEE Transactions on Electron Devices.

Low-frequency noise assessment of border traps in Al2O3 capped DRAM peripheral MOSFETs

K. B. Noh, R. Ritzenthaler, T. Schram, 2014 .

Impact of Nitrogen Incorporation in SiOx/HfSiO Gate Stacks on Negative Bias Temperature Instabilities

M. Aoulaiche, M. Heyns, G. Groeseneken, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

Enhanced dynamic threshold UTBB SOI at high temperature

E. Simoen, C. Claeys, J. A. Martino, 2015, EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.

Analysis of sense margin and reliability of 1T-DRAM fabricated on thin-film UTBOX substrates

N. Collaert, M. Jurczak, M. Aoulaiche, 2009, 2009 IEEE International SOI Conference.

Ground plane influence on enhanced dynamic threshold UTBB SOI nMOSFETs

M. Aoulaiche, L. Witters, E. Simoen, 2014, 2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS).

Random telegraph noise: the key to single defect studies in nano-devices

M. Aoulaiche, E. Simoen, C. Claeys, 2016 .

Thermal budget impact on HKMG Al2O3 and La gate stacks for advanced DRAM periphery transistors

R. Ritzenthaler, T. Schram, N. Horiguchi, 2014, 2014 IEEE Workshop On Microelectronics And Electron Devices (WMED).

Nitrogen Incorporation in HfSiO(N)/TaN Gate Stacks: Impact on Performances and NBTI

M. Aoulaiche, M. Heyns, G. Groeseneken, 2007, IEEE Electron Device Letters.

Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high-k/metal-gate p-type metal oxide semiconductor field effect transistors

B. Kaczer, M. Aoulaiche, G. Groeseneken, 2009 .

Electrical and physical characterization of remote plasma oxidized HfO/sub 2/ gate dielectrics

M. Aoulaiche, M. Houssa, S. Hayashi, 2006, IEEE Transactions on Electron Devices.

Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs

B. L. Bhuva, N. N. Mahatme, E. Simoen, 2012, IEEE Transactions on Nuclear Science.

A low-voltage biasing scheme for aggressively scaled bulk FinFET 1T-DRAM featuring 10s retention at 85°C

A. De Keersgieter, N. Horiguchi, N. Collaert, 2010, 2010 Symposium on VLSI Technology.

Hot carrier degradation on n-channel HfSiON MOSFETs: effects on the device performance and lifetime

L. Pantisano, R. Degraeve, A. Paccagnella, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

Low frequency noise spectroscopy in rotated UTBOX nMOSFETs

E. Simoen, C. Claeys, R. Carin, 2015, 2015 International Conference on Noise and Fluctuations (ICNF).

Low frequency noise characterization in n-channel UTBOX devices with 6 nm Si film

M. Aoulaiche, E. Simoen, C. Claeys, 2013, 2013 22nd International Conference on Noise and Fluctuations (ICNF).

A new high-k/metal gate CMOS integration scheme (Diffusion and Gate Replacement) suppressing gate height asymmetry and compatible with high-thermal budget memory technologies

E. Simoen, R. Ritzenthaler, N. Horiguchi, 2014, 2014 IEEE International Electron Devices Meeting.

Low-Frequency Noise Assessment of the Oxide Trap Density in Thick-Oxide Input-Output Transistors for DRAM Applications

R. Ritzenthaler, T. Schram, N. Horiguchi, 2016 .

Low-frequency noise behaviour of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton

M. G. C. de Andrade, N. Collaert, M. Aoulaiche, 2012, 2012 13th International Conference on Ultimate Integration on Silicon (ULIS).

Floating body effect on n-channel bulk FinFETs for memory application

M. Aoulaiche, E. Simoen, C. Claeys, 2014, 2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS).

Two-sided read window observed on UTBOX SOI 1T-DRAM

M. Aoulaiche, E. Simoen, C. Claeys, 2013, 28th Symposium on Microelectronics Technology and Devices (SBMicro 2013).

Dependence of Generation–Recombination Noise With Gate Voltage in FD SOI MOSFETs

M. Aoulaiche, E. Simoen, C. Claeys, 2012, IEEE Transactions on Electron Devices.

One Transistor Floating Body RAM Performances on UTBOX Devices Using the BJT Effect

M. Aoulaiche, E. Simoen, C. Claeys, 2012 .

Hot hole induced damage in 1T-FBRAM on bulk FinFET

N. Collaert, M. Jurczak, L. Altimime, 2011, 2011 International Reliability Physics Symposium.

Identification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy

M. Aoulaiche, E. Simoen, C. Claeys, 2015 .

Impact of Si-passivation thickness and processing on NBTI reliability of Ge and SiGe pMOSFETs

Jerome Mitard, Tibor Grasser, Guido Groeseneken, 2009 .

Key sub 1nm EOT CMOS enabler by comprehensive PMOS design

T. Schram, C. Adelmann, V. Paraschiv, 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application.

Insights in low frequency noise of advanced and high-mobility channel transistors

A. Veloso, M. Jurczak, P. Fazan, 2012, 2012 International Electron Devices Meeting.

The impact of gate length scaling on UTBOX FDSOI devices: The digital/analog performance of extension-less structures

A. Veloso, M. Jurczak, M. Aoulaiche, 2012, 2012 13th International Conference on Ultimate Integration on Silicon (ULIS).

Leakage Control in 0.4-nm EOT Ru/SrTiOx/Ru Metal-Insulator-Metal Capacitors: Process Implications

S. Clima, M. Jurczak, A. Redolfi, 2014, IEEE Electron Device Letters.

Impact of Electrode Composition and Processing on the Low-Frequency Noise in SrTio3 MIM Capacitors

M. Jurczak, A. Redolfi, M. Popovici, 2014, IEEE Electron Device Letters.

Behavior of triple gate Bulk FinFETs with and without DTMOS operation

Cor Claeys, Eddy Simoen, Marc Aoulaiche, 2011, Ulis 2011 Ultimate Integration on Silicon.

Low-frequency noise of advanced memory devices

E. Simoen, C. Claeys, R. Ritzenthaler, 2015, 2015 International Conference on Noise and Fluctuations (ICNF).

The smaller the noisier? Low frequency noise diagnostics of advanced semiconductor devices

A. Vandooren, R. Rooyackers, E. Simoen, 2015, 2015 30th Symposium on Microelectronics Technology and Devices (SBMicro).

Impact of thermal budget on the low-frequency noise of DRAM peripheral nMOSFETs

R. Ritzenthaler, T. Schram, N. Horiguchi, 2015, 2015 China Semiconductor Technology International Conference.

Noise analysis in advanced memory devices

M. Jurczak, M. Aoulaiche, E. Simoen, 2015, 2015 China Semiconductor Technology International Conference.

A Low-Power HKMG CMOS Platform Compatible With Dram Node 2× and Beyond

Naoto Horiguchi, Wilfried Vandervorst, Tom Schram, 2014, IEEE Transactions on Electron Devices.

Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

S. Clima, M. Jurczak, A. Redolfi, 2014 .

Low-frequency noise analysis of DRAM peripheral transistors with La cap

R. Ritzenthaler, T. Schram, N. Horiguchi, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors

Naoto Horiguchi, Eddy Simoen, Aaron Thean, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

On the Variability of the Low-Frequency Noise in UTBOX SOI nMOSFETs

Cor Claeys, Eddy Simoen, Marc Aoulaiche, 2012 .

Study of ΔID/ID of a single charge trap in utbox silicon films

M. Aoulaiche, E. Simoen, C. Claeys, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Postdeposition-Anneal Effect on Negative Bias Temperature Instability in HfSiON Gate Stacks

S. De Gendt, G. Groeseneken, M. Houssa, 2007, IEEE Transactions on Device and Materials Reliability.

Study of nitrogen impact on VFB-EOT roll-off by varying interfacial SiO2 thickness

R. Degraeve, L. Ragnarsson, M. Aoulaiche, 2011 .

Overview of 3D NAND Technologies and Outlook Invited Paper

Marc Aoulaiche, Srinath Venkatesan, M. Aoulaiche, 2018, 2018 Non-Volatile Memory Technology Symposium (NVMTS).

Low-frequency noise in triple-gate n-channel bulk FinFETs

N. Collaert, M. Aoulaiche, E. Simoen, 2011, 2011 21st International Conference on Noise and Fluctuations.

Transistor threshold voltage modulation by Dy2O3 rare-earth oxide capping: The role of bulk dielectrics charge

C. Adelmann, A. Lauwers, M. Aoulaiche, 2008 .

Advanced PBTI reliability with 0.69 nm EOT GdHfO gate dielectric

R. Degraeve, C. Adelmann, L. Ragnarsson, 2011 .

Impact of Off State Stress on advanced high-K metal gate NMOSFETs

Jacopo Franco, Tom Schram, Marc Aoulaiche, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Positive and negative bias temperature instability in La2O3 and Al2O3 capped high-k MOSFETs

R. Degraeve, B. Kaczer, A. Akheyar, 2009, 2009 IEEE International Reliability Physics Symposium.

Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes

T. Schram, G. Pourtois, B. O’Sullivan, 2008 .

Understanding and optimizing the floating body retention in FDSOI UTBOX

Cor Claeys, Eddy Simoen, Marc Aoulaiche, 2016 .

Low-Frequency-Noise Investigation of n-Channel Bulk FinFETs Developed for One-Transistor Memory Cells

E. Simoen, C. Claeys, M. G. C. de Andrade, 2012, IEEE Transactions on Electron Devices.

Low VT metal-gate/high-k nMOSFETs — PBTI dependence and VT Tune-ability on La/Dy-capping layer locations and Laser annealing conditions

C. Adelmann, L. Ragnarsson, B. Kaczer, 2008, 2008 Symposium on VLSI Technology.

Effects of $\hbox{Al}_{2}\hbox{O}_{3}$ Dielectric Cap and Nitridation on Device Performance, Scalability, and Reliability for Advanced High- $\kappa$/Metal Gate pMOSFET Applications

T. Schram, V. Chang, L. Ragnarsson, 2007, IEEE Transactions on Electron Devices.

Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$-FinFETs

Naoto Horiguchi, Philippe Roussel, Guido Groeseneken, 2013, IEEE Transactions on Electron Devices.

Quantification of metal oxide semiconductor field effect transistor device reliability with low-Vt lanthanum-incorporated high permittivity dielectrics

T. Schram, R. Degraeve, B. O’Sullivan, 2009 .

Diffusion and Gate Replacement: A New Gate-First High- $k$ /Metal Gate CMOS Integration Scheme Suppressing Gate Height Asymmetry

Naoto Horiguchi, Jerome Mitard, Eddy Simoen, 2016, IEEE Transactions on Electron Devices.

Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics

Eddy Simoen, C. Claeys, Marc Aoulaiche, 2014 .

Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications

Eddy Simoen, Marc Aoulaiche, C. Claeys, 2014 .

Semiconductor film band gap influence on retention time of UTBOX SOI 1T-DRAM using pulsed back gate bias

M. Aoulaiche, E. Simoen, C. Claeys, 2013, 28th Symposium on Microelectronics Technology and Devices (SBMicro 2013).

Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM

Cor Claeys, Eddy Simoen, Marc Aoulaiche, 2013 .

The Dependence of Retention Time on Gate Length in UTBOX FBRAM With Different Source/Drain Junction Engineering

E. Simoen, C. Claeys, A. Veloso, 2012, IEEE Electron Device Letters.

The impact of back bias on the floating body effect in UTBOX SOI devices for 1T-FBRAM memory applications

N. Collaert, M. Aoulaiche, E. Simoen, 2012, 2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS).

Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices

M. G. C. de Andrade, N. Collaert, M. Jurczak, 2012, 2012 13th International Conference on Ultimate Integration on Silicon (ULIS).

BJT-Mode Endurance on a 1T-RAM Bulk FinFET Device

Zhichao Lu, Guido Groeseneken, Marc Aoulaiche, 2010, IEEE Electron Device Letters.

Reliability and retention of floating body RAM on bulk FinFET

Eddy Simoen, Guido Groeseneken, Marc Aoulaiche, 2012 .

Origin of wide retention distribution in 1T Floating Body RAM

G. Groeseneken, E. Simoen, C. Claeys, 2012, 2012 IEEE International SOI Conference (SOI).

Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation

Cor Claeys, Eddy Simoen, Marc Aoulaiche, 2014, Microelectron. Reliab..

Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition

B. Douhard, M. Jurczak, A. Redolfi, 2015 .