Z. Fang

Physical mechanisms of endurance degradation in TMO-RRAM

N. Singh, G. Lo, D. Kwong, 2011, 2011 International Electron Devices Meeting.

Self-rectifying and forming-free unipolar HfOx based-high performance RRAM built by fab-avaialbe materials

X. A. Tran, Y. Yeo, B. Nguyen, 2011, 2011 International Electron Devices Meeting.

Experimental and theoretical study of electrode effects in HfO2 based RRAM

C. Cagli, C. Carabasse, J. Nodin, 2011, 2011 International Electron Devices Meeting.

High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D application

X. A. Tran, Y. Yeo, B. Nguyen, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Oxide-based RRAM: Physical based retention projection

D. Kwong, R. Han, B. Chen, 2010, 2010 Proceedings of the European Solid State Device Research Conference.