Y. Jeon

发表

NBTI and hot carrier effect of SOI p-MOSFETs fabricated in strained Si SOI wafer

Chong-Gun Yu, Jong-Tae Park, M. Saif Islam, 2009, Microelectron. Reliab..

Dual gate photo-thin film transistor with high photoconductive gain for high reliability, and low noise flat panel transparent imager

Kinam Kim, I. Yoo, U. Chung, 2011, International Electron Devices Meeting.

Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors

Dong Myong Kim, Dae Hwan Kim, Chang Jung Kim, 2010 .

The Effect of the Active Layer Thickness on the Negative Bias Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors

Dong Myong Kim, Dae Hwan Kim, Yong Woo Jeon, 2011, IEEE Electron Device Letters.

P‐203L: Late‐News Poster: Analytical I‐V and C‐V Models for Amorphous InGaZnO TFTs and Their Application to Circuit Simulations

Changjung Kim, Y. Jeon, Je‐hun Lee, 2011 .

Subgap Density-of-States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)

U-In Chung, Dong Myong Kim, Dae Hwan Kim, 2010, IEEE Transactions on Electron Devices.

P‐205L: Late‐News Poster: Comparison between a‐InGaZnO and a‐InHfZnO TFTs in Perspective of Subgap Density of States (DOS) in Active Film

Y. Jeon, Je‐hun Lee, Sangwon Lee, 2010 .

P‐202L: Late‐News Poster: Density‐of‐States Based Analysis on the Effect of Active Thin‐film Thickness on Current Stress‐induced Instability in Amorphous InGaZnO AMOLED Driver TFTs

Y. Jeon, Je‐hun Lee, D. M. Kim, 2011 .

Relation Between Low-Frequency Noise and Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors

Y. Jeon, Je‐hun Lee, Jae-Woo Park, 2010, IEEE Electron Device Letters.

Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress

Sang Yeol Lee, Dae Hwan Kim, Yong Woo Jeon, 2011 .

25.2: Photo‐Sensor Thin Film Transistor based on Double Metal‐Oxide Layer for In‐cell Remote Touch Screen

U. Chung, Changjung Kim, S. Ahn, 2012 .

Preparation of Yba 2 Cu 3 O x Superconductor Prepared with Additives of PbO and Ag 2 O

Y. Jeon, Jung-Cheul park, S. Chu, 2009 .

A Novel Self-Aligned 4-Bit SONOS-Type Nonvolatile Memory Cell With T-Gate and I-Shaped FinFET Structure

Dong Myong Kim, Dae Hwan Kim, Tsu-Jae King Liu, 2010, IEEE Transactions on Electron Devices.

Impact of transparent electrode on photoresponse of ZnO-based phototransistor

U. Chung, S. Ahn, Y. Jeon, 2013 .

Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor

Sang Yeol Lee, Dae Hwan Kim, Yong Woo Jeon, 2011 .

High performance amorphous oxide thin film transistors with self-aligned top-gate structure

Y. S. Park, U. Chung, J. Hur, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Localization effect of a current-path in amorphous In–Ga–Zn–O thin film transistors with a highly doped buried-layer

Sang Yeol Lee, Dae Hwan Kim, Yong Woo Jeon, 2011 .

Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance–Voltage Characteristics

Dong Myong Kim, Sungwook Park, Dae Hwan Kim, 2010, IEEE Electron Device Letters.

Impact of Oxygen Flow Rate on the Instability Under Positive Bias Stresses in DC-Sputtered Amorphous InGaZnO Thin-Film Transistors

Y. Jeon, Je‐hun Lee, H. Kwon, 2012, IEEE Electron Device Letters.

P‐203L: Late‐News Poster: Analysis on AC Stress‐Induced Degradation Mechanism of Amorphous Indium‐Gallium‐Zinc‐Oxide Thin Film Transistor Inverters

U. Chung, Changjung Kim, Y. Jeon, 2010 .

Comparative study of quasi-static and normal capacitance–voltage characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

Y. Jeon, D. M. Kim, D. Kim, 2011 .

Design of Noncoplanar Diagonal Electrode Structure for Oxide Thin-Film Transistor

Y. Jeon, Sang Yeol Lee, D. Kim, 2011, IEEE Electron Device Letters.

Physics-Based SPICE Model of a-InGaZnO Thin-Film Transistor Using Verilog-A

Y. Jeon, D. M. Kim, D. Kim, 2011 .