J. Garrett

Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications

J. Glaser, J. Nasadoski, P. Losee, 2011, 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

3kV 4H-SiC Thyristors for Pulsed Power Applications

P. Losee, K. Matocha, J. Garrett, 2010 .

Microwave power SiC MESFETs and GaN HEMTs

A. P. Zhang, J. Garrett, J. Kretchmer, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

Influence of 4H-SiC semi-insulating substrate purity on SiC metal-semiconductor field-effect transistor performance

A. F. Allen, A. P. Zhang, J. Garrett, 2003 .

Electrical Instability Suppression in 4H-SiC Power MESFETs

A. F. Allen, A. P. Zhang, J. Garrett, 2002 .

Bias-stress induced threshold voltage and drain current instability in 4H–SiC DMOSFETs

M. V. Rao, Mulpuri V. Rao, J. Garrett, 2008 .

DC and Transient Performance of 4H-SiC Double-Implant MOSFETs

J. Nasadoski, L. Stevanovic, Z. Stum, 2008, IEEE Transactions on Electron Devices.

4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal

K. Matocha, J. Garrett, J. Kretchmer, 2006 .

Bipolar Degradation in 4H-SiC Thyristors

P. Losee, J. Garrett, A. Elasser, 2012 .