J. Bruley

发表

Cr migration on 193nm binary photomasks

William D. Hinsberg, Frances A. Houle, Geoffrey W. Burr, 2009, Advanced Lithography.

Novel Lithography-Independent Pore Phase Change Memory

M. Breitwisch, G. Burr, Yi-Chou Chen, 2007, 2007 IEEE Symposium on VLSI Technology.

Maximized Benefit of La–Al–O Higher-$k$ Gate Dielectrics by Optimizing the La/Al Atomic Ratio

A. Kellock, V. Narayanan, J. Bruley, 2011, IEEE Electron Device Letters.

Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy

H. Riel, J. Bruley, C. Breslin, 2018, Nanotechnology.

Selective area growth of III–V nanowires and their heterostructures on silicon in a nanotube template: towards monolithic integration of nano-devices

Heike Riel, Heinz Schmid, Pratyush Das Kanungo, 2013, Nanotechnology.

Vertical III-V nanowire device integration on Si(100).

Heike Riel, Mattias Borg, Heinz Schmid, 2014, Nano letters.

Switching of ferroelectric polarization in epitaxial BaTiO₃ films on silicon without a conducting bottom electrode.

Catherine Dubourdieu, Sergei V. Kalinin, Sergei V Kalinin, 2013, Nature nanotechnology.

Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si

Heike Riel, Kirsten Moselund, Mattias Borg, 2015 .

Extendibility of NiPt silicide to the 22-nm node CMOS technology

Anna W. Topol, K. Ohuchi, V. Narayanan, 2008, Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08).

Electromigration and resistivity in on-chip Cu, Co and Ru damascene nanowires

F. Mont, C.-K. Hu, J. Bruley, 2017, 2017 IEEE International Interconnect Technology Conference (IITC).

An EELS study of segregation-induced grain-boundary embrittlement of copper

David B. Williams, J. Bruley, V. Keast, 1999 .

Investigating microwave loss of SiGe using superconducting transmon qubits

J. Orcutt, J. Bruley, M. Brink, 2021, Applied Physics Letters.

The Effects of Substrate Conditions on the Microstructural Evolution of Thin Diamond-Like Films

J. Bruley, P. Batson, J. Cuomo, 1990 .

Field emission from amorphous diamond coated Mo tip emitters by pulsed laser deposition

J. Bruley, R. Vispute, J. Narayan, 1997 .

Origins of Effective Work Function Roll-Off Behavior for High-κ Last Replacement Metal Gate Stacks

E. Cartier, V. Narayanan, J. Bruley, 2013, IEEE Electron Device Letters.

High-K Gate Dielectric Structures by Atomic Layer Deposition for the 32nm and Beyond Nodes

V. Narayanan, J. Bruley, H. Jagannathan, 2008 .

High-Resolution Electron Microscopy Observations of Grain-Boundary Films in Silicon Nitride Ceramics

Michael J. Hoffmann, R. M. Cannon, I. Tanaka, 1992 .

High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective Epitaxy

G. Cohen, C. Lavoie, V. Narayanan, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Chemistry and bonding changes associated with the segregation of Bi to grain boundaries in Cu

David B. Williams, J. Bruley, P. Rez, 1998 .

Analysis of buried GaAs layers in 〈100〉 silicon by electron energy loss spectroscopy, Rutherford backscattering spectroscopy, and ion channeling

J. Bruley, P. Madakson, 1990 .

Properties of amorphous diamond films prepared by a filtered cathodic arc

J. Bruley, R. Lossy, J. Cuomo, 1995 .

The nitrogen aggregation sequence and the formation of voidites in diamond

J. Bruley, I. Kiflawi, 2000 .

Investigations of the Bonding Changes Associated with Grain Boundary Embrittlement

David B. Williams, J. Bruley, V. Keast, 1996 .

Spatially resolved electron energy‐loss studies of metal–ceramic interfaces in transition metal/alumina cermets

J. Bruley, J. Yeomans, H. Müllejans, 1995 .

Quantitative Electronic Structure Analysis of {a-Al2O3} Using Spatially Resolved Valence Electron {Energy-Loss} Spectra

J. Bruley, H. Mullejans, F. Mrhpa, 1994 .

TEM STUDY OF THE STRUCTURE AND CHEMISTRY OF A DIAMOND/SILICON INTERFACE

J. Bruley, F. Ernst, M. Rühle, 1994 .

Deposition And Characterization Of Silicon And Carbon Nitride

J. Bruley, J. Hren, J. Cuomo, 1995 .

Carbon Nitride Films Using a Filtered Cathodic ARC

J. Bruley, J. Cuomo, S. Camphausen, 1995 .

Sputter deposition of dense diamond-like carbon films at low temperature

J. Bruley, J. Cuomo, Joyce C. Liu, 1991 .

Cleans for Al vias in a 0.175 /spl mu/m dual damascene process

G. Costrini, A. Domenicucci, J. Benedict, 1999, Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247).

Observations on the influence of solute on grain boundary diffusion and electromigration

D. Muller, J. Bruley, R. Rosenberg, 1998 .

Electron energy‐loss study of bonding in amorphous silicon‐carbon alloy films prepared with hydrogen dilution

J. Bruley, D. Mckenzie, Geoffrey B. Smith, 1988 .

Prospects of High-Ge-Content Strained SiGe for Advanced FinFET Generations

Kevin K. H. Chan, J. Bruley, P. Hashemi, 2016 .

Epitaxial strontium oxide layers on silicon for gate-first and gate-last TiN/HfO2 gate stack scaling

Martin M. Frank, Chiara Marchiori, Jean Fompeyrine, 2011 .

Epitaxial SrO interfacial layers for HfO2–Si gate stack scaling

V. Narayanan, J. Bruley, M. Frank, 2011 .

Replacement metal gate resistance in FinFET architecture modelling, validation and extendibility

S. Grunow, V. Narayanan, J. Bruley, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Measurement of the localized electronic structure associated with bismuth segregation to copper grain boundaries

David B. Williams, J. Bruley, V. Keast, 1996 .

Spectrum-Line Profile Analysis of a Magnesium Aluminate Spinel Sapphire Interface

David B. Williams, J. Bruley, M. Tseng, 1995 .

Scanning Transmission Electron Microscopy Analysis of Grain Boundaries in Creep-Resistant Yttrium- and Lanthanum-Doped Alumina Microstructures

J. Bruley, M. Harmer, H. M. Chan, 2004 .

Spatially resolved electron energy-loss near-edge structure analysis of a near Σ = 11 tilt boundary in sapphire

J. Bruley, 1993 .

Ultra-scaled Conformal Scavenging Electrode with Superior Tunability for Short-channel RMG FinFET Workfunction and all-ALD 3D-compatible ReRAM

E. Cartier, V. Narayanan, J. Bruley, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Simple Gate Metal Anneal (SIGMA) stack for FinFET Replacement Metal Gate toward 14nm and beyond

T. Ando, V. Narayanan, J. Bruley, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Calcium Concentration Dependence of the Intergranular Film Thickness in Silicon Nitride

I. Tanaka, J. Bruley, H. Kleebe, 1994 .

High Resolution Electron Microscopy Studies on Silicon Nitride Ceramics

I. Tanaka, J. Bruley, H. Kleebe, 1994 .

HREM and AEM studies of Yb2O3-fluxed silicon nitride ceramics with and without CaO addition

J. Bruley, H. Kleebe, M. Rühle, 1994 .

Review of methods for calculating near edge structure

M. Payne, J. Bruley, P. Brohan, 1995 .

Improvements in detection sensitivity by spatial difference electron energy-loss spectroscopy at interfaces in ceramics

Harald Müllejans, J. Bruley, H. Müllejans, 1994 .

Compositions and Thicknesses of Grain Boundary Films in Ca-Doped Silicon Nitride Ceramics

R. M. Cannon, I. Tanaka, J. Bruley, 1994 .

Chemistry of grain boundaries in calcia doped silicon nitride studied by spatially resolved electron energy-loss spectroscopy

I. Tanaka, J. Bruley, H. Kleebe, 1994 .

Electron energy‐loss near‐edge structure of internal interfaces by spatial difference spectroscopy

J. Bruley, H. Müllejans, H. MÜLLEJANS, 1995 .

Structural and spectroscopic investigation of (111) twins in barium titanate

Aleksander Rečnik, J. Bruley, Manfred Rühle, 1994 .

Epitaxial growth of LaAlO3 on SrTiO3-buffered Si (001) substrates by atomic layer deposition

Alexander A. Demkov, John G. Ekerdt, J. Bruley, 2013 .

Investigations of the chemistry and bonding at niobiumsapphire interfaces

J. Bruley, J. Mayer, R. Brydson, 1994 .

Sreels Analysis of Oxygen-Rich Inversion Domain Boundaries in Aluminum Nitride

J. Bruley, M. Notis, Ji-Cheng Zhao, 1994 .

Electron energy‐loss near‐edge structure – a tool for the investigation of electronic structure on the nanometre scale

J. Bruley, V. Keast, R. Brydson, 2001, Journal of microscopy.

Pulsed laser deposition of diamond‐like carbon films

Tieer Gu, Robert W. Collins, William Krakow, 1992 .

Nanostructure and chemistry of a (100)MgO/(100)GaAs interface

J. Bruley, S. Stemmer, F. Ernst, 1994 .

Evidence for segregation of Te in Ge2Sb2Te5 films: Effect on the “phase-change” stress

C. Cabral, Kuan-Neng Chen, V. Deline, 2007 .

‘Natural’ and ‘man-made’ platelets in type-Ia diamonds

J. Bruley, G. Tendeloo, I. Kiflawi, 1998 .

Quantitative electron energy-loss spectroscopy microanalysis of platelet and voidite defects in natural diamond

J. Bruley, L. M. Brown, 1989 .

Vapor deposition processes for amorphous carbon films with sp3 fractions approaching diamond

James P. Doyle, David L. Pappas, Jerome J. Cuomo, 1991 .

Direct evidence for abrupt postcrystallization germanium precipitation in thin phase-change films of Sb-15 at. % Ge

S. Raoux, C. Cabral, V. Deline, 2008 .

Epitaxial c-axis oriented BaTiO3 thin films on SrTiO3-buffered Si(001) by atomic layer deposition

Alexander A. Demkov, John G. Ekerdt, Chengqing Hu, 2014 .

Further evidence for core-hole effects in the near-edge structures of light-element K-edges

J. Bruley, R. Brydson, John Meurig Thomas, 1988 .

Quantitative Eels Microanalysis of Nanometre Sized Defects and Inclusions in Natural Diamond

J. Bruley, L. Brown, 1988 .

Ion‐beam sputtered diamond‐like carbon with densities of 2.9 g/cc

J. Bruley, J. Cuomo, Joyce C. Liu, 1991 .

Erratum: Switching of ferroelectric polarization in epitaxial BaTiO 3 films on silicon without a conducting bottom electrode (Nature Nanotechnology (2013) 8 (748-754))

David J. Frank, Catherine Dubourdieu, Alexander A. Demkov, 2013 .

Nitrogen determination and characterization in natural diamond platelets

J. Bruley, J. Bruley, J. Barry, 1995 .

Off-axis electron holography with a dual-lens imaging system and its usefulness in 2-D potential mapping of semiconductor devices.

A. Domenicucci, M. Kawasaki, J. Bruley, 2004, Ultramicroscopy.

Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires

S. Kodambaka, J. Tersoff, M. Reuter, 2009, Science.

Dual-Lens Electron Holography for Junction Profiling and Strain Mapping of Semiconductor Devices

A. Domenicucci, J. Bruley, Y. Wang, 2014, Microscopy Today.

Variable magnification dual lens electron holography for semiconductor junction profiling and strain mapping.

A. Domenicucci, J. Bruley, J. Li, 2013, Ultramicroscopy.

Variable Magnification Electron Holography for 2-D Mapping of Semiconductor Devices

A. Domenicucci, M. Kawasaki, J. Bruley, 2004, Microscopy Today.

Germanium Concentration Profiles Across Interfaces And Close To Dislocations In Cvd Si1−xGex-on-Si Junctions.

J. Bruley, F. Ernst, K. Ljutovich, 1991 .

Applications of the near-edge and low-loss fine structure in the analysis of diamond

J. Bruley, D. Mckenzie, S. Berger, 1989 .

Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography

Conal E. Murray, N. Bernier, J. Bruley, 2015 .

Strain mapping of Si devices with stress memorization processing

A. Domenicucci, J. Bruley, J. Rouviere, 2013 .

Quantitative nanoscale imaging of lattice distortions in epitaxial semiconductor heterostructures using nanofocused X-ray Bragg projection ptychography.

Ian McNulty, Ashish Tripathi, Conal E. Murray, 2012, Nano letters.

Energetic carbon deposition at oblique angles

J. Bruley, R. Lossy, J. Cuomo, 1992 .

Incorporation of la in epitaxial SrTiO3 thin films grown by atomic layer deposition on SrTiO3-buffered Si (001) substrates

Alexander A. Demkov, John G. Ekerdt, Martin M. Frank, 2014 .

Wetting at the BaTiO3/Pt interface

J. Bruley, A. Demkov, C. Dubourdieu, 2013 .

Strain Relaxation in Single Crystal SrTiO3 Grown on Si (001) by Molecular Beam Epitaxy

Catherine Dubourdieu, Alexander A. Demkov, N. David Theodore, 2012 .

Extendibility of NiPt Silicide Contacts for CMOS Technology Demonstrated to the 22-nm Node

Anna W. Topol, M. Khare, C. Lavoie, 2007, 2007 IEEE International Electron Devices Meeting.

High Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks With In-Situ O3 Treatment

Kevin K. H. Chan, E. Cartier, V. Narayanan, 2017, IEEE Electron Device Letters.

A Study of the Electronic Structure Near Individual Dislocations in Diamond by Energy-Loss Spectroscopy

J. Bruley, P. Batson, 1989 .

Effect of hot carrier stress on device junctions measured by electron holography and scanning capacitance microscopy

R. Krishnasamy, J. Bruley, D. Ioannou, 2018, Applied Physics Letters.

Chemistry of Basal Plane Defects in Zinc Oxide–Antimony Oxide (0.1 mol%) Ceramics

J. Bruley, V. Kraševec, U. Bremer, 1992 .

Detection of nitrogen at {100} platelets in a type IaA/B diamond

J. Bruley, 1992 .

Full metal gate with borderless contact for 14 nm and beyond

B. Haran, V. Narayanan, J. Bruley, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Epitaxial graphene nanoribbon array fabrication using BCP-assisted nanolithography.

Guanxiong Liu, Phaedon Avouris, Yu-Ming Lin, 2012, ACS nano.

High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition

E. Cartier, J. Bruley, L. Gignac, 2001 .

Oxygen migration in TiO2-based higher-k gate stacks

V. Narayanan, J. Bruley, M. Frank, 2010 .

CMOS compatible MIM decoupling capacitor with reliable sub-nm EOT high-k stacks for the 7 nm node and beyond

T. Ando, V. Narayanan, J. Bruley, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Double spin-torque magnetic tunnel junction devices for last-level cache applications

J. Bruley, P. Hashemi, P. Trouilloud, 2022, 2022 International Electron Devices Meeting (IEDM).

Scaling the MOSFET gate dielectric: From high-k to higher-k? (Invited Paper)

Martin M. Frank, Michael P. Chudzik, Vijay Narayanan, 2009 .

High performance and reliable strained SiGe PMOS FinFETs enabled by advanced gate stack engineering

Eduard A. Cartier, Takashi Ando, Vijay Narayanan, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

High performance and record subthreshold swing demonstration in scaled RMG SiGe FinFETs with high-Ge-content channels formed by 3D condensation and a novel gate stack process

T. Ando, V. Narayanan, E. Leobandung, 2017, 2017 Symposium on VLSI Technology.

Confined PCM-based Analog Synaptic Devices offering Low Resistance-drift and 1000 Programmable States for Deep Learning

S. Ambrogio, K. Suu, J. Bruley, 2019, 2019 Symposium on VLSI Technology.

Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

W. Haensch, C. Lavoie, J. Newbury, 2010, IEEE Electron Device Letters.

High performance PMOS with strained high-Ge-content SiGe fins for advanced logic applications

Kevin K. H. Chan, V. Narayanan, J. Bruley, 2017, 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths

T. Ando, V. Narayanan, E. Leobandung, 2016, 2016 IEEE Symposium on VLSI Technology.

Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-k/Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors

J. Bruley, M. Takayanagi, V. Paruchuri, 2011 .

Quantitative near‐edge structure analysis of diamond‐like carbon in the electron microscope using a two‐window method

David B. Williams, J. Bruley, J. Cuomo, 1995 .

(Invited) Ultimate EOT Scaling (< 5Aå) Using Hf-Based High-κ Gate Dielectrics and Impact on Carrier Mobility

V. Narayanan, J. Bruley, H. Arimura, 2010 .

High temperature (1000 °C) compatible Y―La―Si―O silicate gate dielectric in direct contact with Si with 7.7 A equivalent oxide thickness

E. Cartier, V. Narayanan, J. Bruley, 2011 .

Materials and Electrical Characterization of Physical Vapor Deposited LaxLu1-xO3 Thin Films on 300 mm Silicon

Barry P. Linder, Andrew J. Kellock, Sanjay Shinde, 2011 .

Physical origins of mobility degradation in extremely scaled SiO2/HfO2 gate stacks with La and Al induced dipoles

V. Narayanan, J. Bruley, T. Ando, 2010 .

Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and Vt-tuning dipoles with gate-first process

T. Ando, V. Narayanan, A. Kerber, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Extremely scaled gate-first high-k/metal gate stack with EOT of 0.55 nm using novel interfacial layer scavenging techniques for 22nm technology node and beyond

E. Cartier, V. Narayanan, J. Bruley, 2006, 2009 Symposium on VLSI Technology.