Yongxi Zhang

430-V 12.4-$hboxmOmegacdot hboxcm^2$Normally off 4H-SiC Lateral JFET

M. Su, K. Sheng, Yuzhu Li, 2006, IEEE Electron Device Letters.

1000-V 9.1-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ Normally Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuit Applications

M. Su, K. Sheng, Yongxi Zhang, 2007, IEEE Electron Device Letters.

A RESURF P-N bimodal LDMOS suitable for high voltage power switching applications

Yongxi Zhang, P. Hower, S. Pendharkar, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Rheology and Thermal Conductivity of Diamond Powder-Filled Liquid Epoxy Encapsulants for Electronic Packaging

K. Sheng, Yongxi Zhang, J.H. Zhao, 2009, IEEE Transactions on Components and Packaging Technologies.

Development of 4H-SiC LJFET-Based Power IC

J.H. Zhao, Xueqing Li, Kuang Sheng, 2008, IEEE Transactions on Electron Devices.

High Frequency Switching of SiC High Voltage LJFET

M. Su, K. Sheng, Yongxi Zhang, 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.