K. Fujikawa

800 V 4H-SiC RESURF-type lateral JFETs

K. Fujikawa, K. Shibata, T. Masuda, 2004, IEEE Electron Device Letters.

Fabrication and Initial Characterization of 600 V 4H-SiC RESURF-type JFETs

K. Fujikawa, S. Hatsukawa, M. Iiyama, 2004 .

MOCVD GaAs growth on Ge (100) and Si (100) substrates

K. Fujikawa, N. Hayafuji, T. Murotani, 1986 .

Interlayer analysis of HfO2/SiO2/Si by SIMS and HRBS

K. Fujikawa, T. Toyoda, K. Sasakawa, 2008 .