T. Lii

Trench storage capacitors for high density DRAMs

Stephan A. Cohen, K. Stein, T. Rajeevakumar, 1991, International Electron Devices Meeting 1991 [Technical Digest].

Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishing

Y. Taur, T. Ning, T. Lii, 1990, International Technical Digest on Electron Devices.

A Room Temperature 0.1 /spl mu/m CMOS on SOI

J. Warnock, S. Furkay, D. Moy, 1993, Symposium 1993 on VLSI Technology.

Experimental high performance sub-0.1 /spl mu/m channel nMOSFET's

Y. Taur, T. Lii, D. Quinlan, 1994, IEEE Electron Device Letters.

A High Speed, Low Power P-Channel Flash EEPROM Using Silicon Rich Oxide as Tunneling Dielectric

Y. Taur, T. Ning, T. Lii, 1992 .

A high performance 1.8 V, 0.20 /spl mu/m CMOS technology with copper metallization

S. Das, T. Lii, M. Angyal, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Differences in erosion mechanism and selectivity between Ti and TiN in fluorocarbon plasmas for dielectric etch

T. Lii, C. Lenox, G. Oehrlein, 2012 .

Study of Ti etching and selectivity mechanism in fluorocarbon plasmas for dielectric etch

T. Lii, C. Lenox, G. Oehrlein, 2012 .

Controlling Asymmetric Photoresist Feature Dimensions during Plasma‐Assisted Shrink

T. Lii, G. Oehrlein, D. Metzler, 2014 .

Inductively coupled, point-of-use plasma abatement of perfluorinated compounds and hydrofluorinated compounds from etch processes utilizing O2 and H2O as additive gases

T. Lii, D. Graves, V. Vartanian, 2000 .

Selective etching of TiN over TaN and vice versa in chlorine-containing plasmas

V. M. Donnelly, D. J. Economou, T. Lii, 2013 .

Electron Beam Deflection When Welding Dissimilar Metals

T. Lii, Pengsheng Wei, 1990 .

Experimental 0.1 mu m p-channel MOSFET with p/sup +/-polysilicon gate on 35 AA gate oxide

Y. Taur, T. Lii, D. Quinlan, 1993, IEEE Electron Device Letters.

A High Performance 0.25/spl mu/m CMOS

J. Warnock, K. Jenkins, D. Klaus, 1993, Symposium 1993 on VLSI Technology.

Microstructure of binary Mg-Al eutectic alloy wires produced by the Ohno continuous casting process

T. Lii, X. Guo, Z. M. Zhang, 2008 .

Integration of multi-level copper metallization into a high performance sub-0.25 /spl mu/m CMOS technology

T. Lii, M. Angyal, H. Kawasaki, 1998, Proceedings of the 1998 Second IEEE International Caracas Conference on Devices, Circuits and Systems. ICCDCS 98. On the 70th Anniversary of the MOSFET and 50th of the BJT. (Cat. No.98TH8350).