D. Bimberg

发表

20-Gb/s direct modulation of 980 nm VCSELs based on submonolayer deposition of quantum dots

Nikolai N. Ledentsov, Friedhelm Hopfer, Alex Mutig, 2006, Workshop on Optical Components for Broadband Communication.

Self organized quantum dots for 1.3 μm photonic devices

Nikolai N. Ledentsov, Friedhelm Hopfer, Gerrit Fiol, 2006, Workshop on Optical Components for Broadband Communication.

An all-optical grooming switch with regenerative capabilities

P. Petropoulos, D. Bimberg, W. Freude, 2009, 2009 11th International Conference on Transparent Optical Networks.

Quantum dot semiconductor optical amplifier at 1.3 μm for ultra-fast cross-gain modulation

D. Bimberg, Wolfgang Freude, M. Laemmlin, 2007 .

850 nm optical components for 25 Gb/s optical fiber data communication links over 100 m at 85°C

D. Bimberg, J. A. Lott, A. G. Kuzmenkov, 2011, 2011 Asia Communications and Photonics Conference and Exhibition (ACP).

High-frequency nanophotonic devices

Gerrit Fiol, D. Bimberg, M. Laemmlin, 2007, SPIE OPTO.

Carrier storage time of milliseconds at room temperature in self-organized quantum dots

D. Bimberg, A. Marent, Elizaveta Semenova, 2006 .

Temperature-Dependent Small-Signal Analysis of High-Speed High-Temperature Stable 980-nm VCSELs

D. Bimberg, F. Hopfer, A. Mutig, 2009, IEEE Journal of Selected Topics in Quantum Electronics.

Linewidth enhancement factor in InGaAs quantum-dot amplifiers

D. Bimberg, P. Borri, U. Woggon, 2003, IEEE Journal of Quantum Electronics.

Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states

Guillaume Huyet, Nikolai N. Ledentsov, D. Bimberg, 2004 .

Resonance wavelength in planar multilayer waveguides: control and complete suppression of temperature sensitivity

Nikolai N. Ledentsov, Vitaly A. Shchukin, D. Bimberg, 2007 .

High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser

Mikhail V. Maximov, A. R. Kovsh, D. Bimberg, 1998 .

High‐resolution x‐ray analysis of compressively strained 1.55 μm GaInAs/AlGaInAs multiquantum well structures near the critical thickness

D. Bimberg, Herbert Burkhard, Armin Dadgar, 1995 .

Quantum dot based photonic devices at 1.3 µm: Direct modulation, mode-locking, SOAs and VCSELs

Friedhelm Hopfer, Alex Mutig, Gerrit Fiol, 2006 .

Single transverse mode 850 nm GaAs/AlGaAs lasers with narrow beam divergence

Nikolai N. Ledentsov, Mikhail V. Maximov, A. R. Kovsh, 2006 .

Progress in Epitaxial Growth and Performance of Quantum Dot and Quantum Wire Lasers

D. Bimberg, N. Ledentsov, Z. Alferov, 2008, Journal of Lightwave Technology.

1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition

Nikolai N. Ledentsov, Mikhail V. Maximov, D. Bimberg, 1999 .

106years extrapolated hole storage time in GaSb∕AlAs quantum dots

D. Bimberg, D. Feise, A. Marent, 2007 .

Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm

A. R. Kovsh, D. Bimberg, N. N. Ledentsov, 2003 .

Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W

D. Bimberg, N. N. Ledentsov, Yu. M. Shernyakov, 1997 .

Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation

Mikhail V. Maximov, A. R. Kovsh, D. Bimberg, 2001 .

Indium redistribution in an InGaN quantum well induced by electron-beam irradiation in a transmission electron microscope

D. Bimberg, Andreas Rosenauer, André Strittmatter, 2005 .

On ultrafast optical switching based on quantum-dot semiconductor optical amplifiers in nonlinear interferometers

D. Bimberg, M. Laemmlin, D. Cotter, 2004, IEEE Photonics Technology Letters.

35 GHz mode-locking of 1.3 μm quantum dot lasers

Richard V. Penty, Ian H. White, Gerrit Fiol, 2004 .

Theoretical and Experimental Study of High-Speed Small-Signal Cross-Gain Modulation of Quantum-Dot Semiconductor Optical Amplifiers

D. Bimberg, M. Laemmlin, C. Meuer, 2009, IEEE Journal of Quantum Electronics.

Exciton relaxation and dephasing in quantum-dot amplifiers from room to cryogenic temperature

D. Bimberg, Wolfgang Werner Langbein, Roman Sellin, 2002 .

Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers

D. Bimberg, P. Borri, F. Heinrichsdorff, 2000, IEEE Journal of Selected Topics in Quantum Electronics.

Polarization Switching in Quantum-Dot Vertical-Cavity Surface-Emitting Lasers

D. Bimberg, H. Thienpont, M. Sciamanna, 2009, IEEE Photonics Technology Letters.

High external differential efficiency and high optical gain of long-wavelength quantum dot diode laser

Nikolai N. Ledentsov, Mikhail V. Maximov, A. R. Kovsh, 2003 .

Arrays of Two-Dimensional Islands Formed by Submonolayer Insertions: Growth, Properties, Devices

Nikolai N. Ledentsov, Igor L. Krestnikov, D. Bimberg, 2001 .

Single and multiple channel operation dynamics of linear quantum-dot semiconductor optical amplifier

D. Bimberg, W. Freude, M. Laemmlin, 2008, 2008 34th European Conference on Optical Communication.

Optical and electrical power dynamic range of semiconductor optical amplifiers in radio-over-fiber networks

D. Bimberg, C. Koos, W. Freude, 2010, 36th European Conference and Exhibition on Optical Communication.

Formation of coherent superdots using metal‐organic chemical vapor deposition

Mikhail V. Maximov, D. Bimberg, N. N. Ledentsov, 1996 .

Spectral hole-burning and carrier-heating dynamics in quantum-dot amplifiers: comparison with bulk amplifiers

D. Bimberg, Wolfgang Werner Langbein, Paola Borri, 2001 .

Gain characteristics of quantum-dot injection lasers

A. R. Kovsh, D. Bimberg, N. N. Ledentsov, 1999 .

Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C

D. Bimberg, N. N. Ledentsov, Yu. M. Shernyakov, 1997 .

High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates

D. A. Livshits, A. R. Kovsh, D. Bimberg, 2002 .

Quantum dot photonic devices for lightwave communication

D. Bimberg, M. Laemmlin, M. Kuntz, 2003 .

Alternative-precursor metalorganic chemical vapor deposition of self-organized InGaAs/GaAs quantum dots and quantum-dot lasers

D. Bimberg, Roman Sellin, T. Kettler, 2003 .

The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix

D. Bimberg, N. N. Ledentsov, D. S. Sizov, 2002 .

Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers

D. Bimberg, C. Marinelli, D. Birkedal, 2004, 2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest..

Excitonic and electron-hole contributions to the spontaneous recombination rate of injected charge carriers in GaAs-GaAlAs multiple quantum well lasers at room temperature

D. Bimberg, W. Schlapp, E. H. Bottcher, 1987 .

Properties of loss-coupled distributed feedback laser arrays for wavelength division multiplexing systems

D. Bimberg, Herbert Burkhard, S. Hansmann, 1997 .

Reversibility of the island shape, volume and density in Stranski-Krastanow growth

Nikolai N. Ledentsov, Vitaly A. Shchukin, D. Bimberg, 2001 .

The QD-Flash: a quantum dot-based memory device

D. Bimberg, A. Marent, T. Nowozin, 2010 .

Self-assembled quantum dots: crossover from kinetically controlled to thermodynamically limited growth.

Vitaly A. Shchukin, D. Bimberg, Eckehard Schöll, 2001, Physical review letters.

Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm

A. R. Kovsh, D. Bimberg, N. N. Ledentsov, 1999 .

1.3 / 1.5 µm QD-SOAs for WDM/TDM GPON with extended reach and large upstream / downstream dynamic range

D. Bimberg, W. Freude, R. Bonk, 2009, 2009 Conference on Optical Fiber Communication - incudes post deadline papers.

Mode-Locked Quantum-Dot Lasers

D. Bimberg, C. Meuer, G. Fiol, 2011, IEEE Winter Topicals 2011.

Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures

A. R. Kovsh, D. Bimberg, N. N. Ledentsov, 1999 .

Growth of self-organized quantum dots for optoelectronics applications: nanostructures, nanoepitaxy, defect engineering

Nikolai N. Ledentsov, D. Bimberg, N. Ledentsov, 2003 .

Quantum-Dot Semiconductor Mode-Locked Lasers and Amplifiers at 40 GHz

D. Bimberg, M. Laemmlin, C. Meuer, 2009, IEEE Journal of Quantum Electronics.

Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers

D. Bimberg, P. Borri, F. Heinrichsdorff, 2000, IEEE Photonics Technology Letters.

Spectrotemporal response of 1.3 μm quantum-dot lasers

D. Bimberg, Matthias Kuntz, Yu. M. Shernyakov, 2002 .

Design considerations for large-aperture single-mode oxide-confined vertical-cavity surface-emitting lasers

D. Bimberg, N. N. Ledentsov, Vladimir Kalosha, 2012 .

Transform-limited optical pulses from 18GHz monolithic modelocked quantum dot lasers operating at similar to 1.3 mu m

Richard V. Penty, Ian H. White, D. Bimberg, 2004 .

Large modal gain of InAs/GaAs quantum dot lasers

D. Bimberg, Marius Grundmann, Roman Sellin, 2001 .

Temperature dependent optical properties of self-organized InAs/GaAs quantum dots

D. Bimberg, A. Madhukar, R. Heitz, 1999 .

TEM Characterization of Self-Organized (In,Ga)N Quantum Dots

D. Bimberg, Wolfgang Neumann, Holm Kirmse, 2008 .

Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-μm-wavelength at room temperature

D. Bimberg, Wolfgang Werner Langbein, N. N. Ledentsov, 2001 .

Properties of strained (In, Ga, Al)As lasers with laterally modulated active region

Mikhail V. Maximov, Igor L. Krestnikov, D. Bimberg, 1997 .

Comments on "Lasing at three-dimensionally quantum-confined sublevel of self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots by current injection" [and reply]

D. Bimberg, N. N. Ledentsov, John V. Sandusky, 1996 .

Metamorphic 1.5 µm-range quantum dot lasers on a GaAs substrate

Nikolai N. Ledentsov, Mikhail V. Maximov, Gerrit Fiol, 2006 .

InGaAs Quantum Dots Coupled to a Reservoir of Nonequilibrium Free Carriers

D. Bimberg, M. Laemmlin, U. Woggon, 2009, IEEE Journal of Quantum Electronics.

Ordered arrays of vertically correlated GaAs and AlAs quantum wires grown on a GaAs(311)A surface

D. Bimberg, B. R. Semyagin, V. V. Preobrazhenskii, 2002 .

Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces

D. Bimberg, D. Gerthsen, I. P. Soshnikov, 2001 .

MBE-grown ultra-large aperture single-mode vertical-cavity surface-emitting laser with all-epitaxial filter section

Nikolai N. Ledentsov, Mikhail V. Maximov, Friedhelm Hopfer, 2007 .

MODELING OF STRAINED QUANTUM WIRES USING EIGHT-BAND K.P THEORY

D. Bimberg, Oliver Stier, D. Bimberg, 1997 .

LOW THRESHOLD QUANTUM DOT INJECTION LASER EMITTING AT 1.9MU M

D. Bimberg, Sergei V. Zaitsev, N. N. Ledentsov, 1998 .

10 Gbit/s data modulation using 1.3 /spl mu/m InGaAs quantum dot lasers

Gerrit Fiol, D. Bimberg, Matthias Kuntz, 2005 .

20 Gb/s 85$^{\circ}$C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots

D. Bimberg, M. Kuntz, F. Hopfer, 2006, IEEE Journal of Selected Topics in Quantum Electronics.

Tunneling emission from self-organized In(Ga)As/GaAs quantum dots observed via time-resolved capacitance measurements

D. Bimberg, Roman Sellin, E. Stock, 2006 .

Multi-wavelength all-optical regeneration

P. Petropoulos, D. Bimberg, I. Tomkos, 2008, 2008 Digest of the IEEE/LEOS Summer Topical Meetings.

Multiple stacks of InAs/InGaAs quantum dots for GaAs-based 1.3 /spl mu/m vertical cavity surface emitting lasers

A. R. Kovsh, D. Bimberg, James A. Lott, 2003, The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003..

Testing the Lateral Resolution in the Nanometre Range with a New Type of Certified Reference Material

D. Bimberg, Roman Sellin, Mathias Senoner, 2006 .

Quantum-dot heterostructure lasers

D. Bimberg, M. Grundmann, F. Heinrichsdorff, 2000, IEEE Journal of Selected Topics in Quantum Electronics.

Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots

D. Bimberg, R. Seguin, A. Schliwa, 2006 .

High-power singlemode CW operation of 1.5 /spl mu/m-range quantum dot GaAs-based laser

Nikolai N. Ledentsov, Mikhail V. Maximov, D. Bimberg, 2005 .

Vertical cavity surface emitting lasers with InAs-InGaAs quantum dot active regions on GaAs substrates emitting at 1.3 /spl mu/m

D. Bimberg, A.E. Zhukov, V.M. Ustinov, 2000, Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092).

Quantum Dot Amplifiers for 100 Gbit Ethernet

D. Bimberg, M. Laemmlin, C. Meuer, 2006, 2006 International Conference on Transparent Optical Networks.

Quantum optics of a quantum dot: Local-field effects

D. Bimberg, Sergey A. Maksimenko, G. Ya. Slepyan, 2002 .

High power GaAs∕AlGaAs lasers (λ∼850nm) with ultranarrow vertical beam divergence

Mikhail V. Maximov, D. Bimberg, N. N. Ledentsov, 2006 .

Micro-Raman studies of vertical-cavity surface-emitting lasers with AlxOy/GaAs distributed Bragg reflectors

Friedhelm Hopfer, D. Bimberg, A. Lochmann, 2002 .

1.24 μm InGaAs/GaAs quantum dot laser grown by metalorganic chemical vapor deposition using tertiarybutylarsine

D. Bimberg, Roman Sellin, T. Kettler, 2004 .

High bit rate and elevated temperature data transmission using InGaAs quantum-dot lasers

D. Bimberg, A. Wonfor, M. Kuntz, 2004, IEEE Photonics Technology Letters.

Excited-state gain dynamics in InGaAs quantum-dot amplifiers

D. Bimberg, P. Borri, U. Woggon, 2005, IEEE Photonics Technology Letters.

Complete suppression of filamentation and superior beam quality in quantum-dot lasers

Mikhail V. Maximov, Friedhelm Hopfer, D. Bimberg, 2003 .

Distortion-free optical amplification of 20-80 GHz modelocked laser pulses at 1.3 [micro sign]m using quantum dots

Nikolai N. Ledentsov, Gerrit Fiol, D. Bimberg, 2006 .

InGaAs quantum wires grown by low pressure metalorganic chemical vapor deposition on InP V‐grooves

D. Bimberg, Marius Grundmann, M. Kappelt, 1996 .

Contactless electroreflectance study of a vertically coupled quantum dot-based InAs/GaAs laser structure

D. Bimberg, Fred H. Pollak, Lionel Aigouy, 1997 .

Direct modulation and mode locking of 1.3 μm quantum dot lasers

Nikolai N. Ledentsov, Richard V. Penty, Ian H. White, 2004 .

Self organization phenomena of InGaAs/GaAs quantum dots grown by metalorganic chemical vapour deposition

D. Bimberg, Marius Grundmann, Juergen Christen, 1997 .

Erratum for ‘Quantum dot based nanophotonics and nanoelectronics’

D. Bimberg, 2008 .

BAM‐L002—a new type of certified reference material for length calibration and testing of lateral resolution in the nanometre range

D. Bimberg, Roman Sellin, Werner Österle, 2004 .

Single-mode submonolayer quantum-dot vertical-cavity surface-emitting lasers with high modulation bandwidth

Friedhelm Hopfer, Alex Mutig, Gerrit Fiol, 2006 .

Single mode cw operation of 658nm AlGaInP lasers based on longitudinal photonic band gap crystal

Mikhail V. Maximov, D. Bimberg, N. N. Ledentsov, 2006 .

Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layer

D. Bimberg, V. Türck, Juergen Christen, 1999 .

Self‐organization processes of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

D. Bimberg, Marius Grundmann, Alois Krost, 1996 .

Vertical-cavity surface-emitting quantum-dot laser with low threshold current grown by metal-organic vapor phase epitaxy

Friedhelm Hopfer, Alex Mutig, D. Bimberg, 2006 .

Direct observation of tunneling emission to determine localization energies in self-organized In(Ga)As quantum dots

D. Bimberg, Roman Sellin, E. Stock, 2006 .

Temperature and electric field dependence of the carrier emission processes in a quantum dot-based memory structure

D. Bimberg, A. Marent, T. Nowozin, 2009 .

Ruthenium: A superior compensator of InP

D. Bimberg, Armin Dadgar, D. Bimberg, 1998 .

Structural investigation of GaN layers grown on Si(1 1 1) substrates using a nitridated AlAs buffer layer

Peter Veit, D. Bimberg, André Strittmatter, 2000 .

Coherent versus incoherent dynamics in InAs quantum-dot active wave guides

D. Bimberg, Wolfgang Werner Langbein, Paola Borri, 2001 .

Transform-limited optical pulses from 18 GHz monolithic modelocked quantum dot lasers operating at ∼1.3 µm

Alexey E. Zhukov, Richard V. Penty, Ian H. White, 2004 .

Study of high frequency response of self-organised stacked quantum dot lasers at room temperature

D. Bimberg, Alois Krost, D. Bimberg, 1997 .

Hole-based memory operation in an InAs/GaAs quantum dot heterostructure

D. Bimberg, A. Marent, T. Nowozin, 2009 .

Injection lasers based on InGaAs quantum dots in an AlGaAs matrix

D. Bimberg, N. N. Ledentsov, M. V. Maximov, 1998 .

Capacitance–voltage characteristics of InAs/GaAs quantum dots embedded in a pn structure

D. Bimberg, Eckehard Schöll, Andreas Wacker, 2000 .

A write time of 6ns for quantum dot–based memory structures

D. Bimberg, A. Marent, T. Nowozin, 2008 .

Monolithic electro-optically modulated VCSEL suitable for radio over fibre applications to 20 GHz

D. Bimberg, J. A. Lott, N. N. Ledentsov, 2011, 2011 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference.