M. Angyal

发表

Correlation between I–V slope and TDDB voltage acceleration for Cu/low-k interconnects

F. Chen, J. Gambino, M. Shinosky, 2009, 2009 IEEE International Interconnect Technology Conference.

Characterization, Modeling and Extraction of Cu Wire Resistance for 65 nm Technology

Ning Lu, Vincent J. McGahay, Theodorus E. Standaert, 2007, 2007 IEEE Custom Integrated Circuits Conference.

High performance 32nm SOI CMOS with high-k/metal gate and 0.149µm2 SRAM and ultra low-k back end with eleven levels of copper

M. Belyansky, L. Black, J. Holt, 2006, 2009 Symposium on VLSI Technology.

A study of via depletion electromigration with very long failure times

Cathryn Christiansen, Baozhen Li, Kaushik Chanda, 2011, 2011 International Reliability Physics Symposium.

Electrical leakage at low-K polyimide/TEOS interface

J. Wetzel, M. Angyal, S.S. Wong, 1998, IEEE Electron Device Letters.

A high performance 1.8 V, 0.20 /spl mu/m CMOS technology with copper metallization

S. Das, T. Lii, M. Angyal, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Integration of Multi-Level Copper Metallization into a High Performance Sub-0.25μM Technology

M. Angyal, Ajay Jain, V. Kaushik, 1998 .

Inline monitoring of multi-level dual inlaid copper interconnect technologies

S. Veeraraghavan, S. Venkatesan, John Mendonca, 2000, Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407).

Theoretical and experimental analysis of the low dielectric constant of fluorinated silica

M. Angyal, A. Demkov, S. Zollner, 1999 .

Critical ultra low-k TDDB reliability issues for advanced CMOS technologies

M. Shinosky, D. Badami, J. Sudijono, 2009, 2009 IEEE International Reliability Physics Symposium.

Technology Reliability Qualification of a 65nm CMOS Cu/Low-k BEOL Interconnect

T. Sullivan, F. Chen, B. Li, 2006, 2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits.

Invasion percolation model for abnormal TDDB characteristic of ULK dielectrics with Cu interconnect at advanced technology nodes

M. Shinosky, J. Aitken, G. Bonilla, 2011, 2011 International Reliability Physics Symposium.

Investigation of CVD SiCOH low-k time-dependent dielectric breakdown at 65nm node technology

J. Gill, M. Shinosky, T. Ema, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

Performance of tantalum‐silicon‐nitride diffusion barriers between copper and silicon dioxide

M. Angyal, M. Nicolet, J. Reid, 1995 .

Comprehensive investigations of CoWP metal-cap impacts on low-k TDDB for 32nm technology application

L. Nicholson, F. Chen, M. Shinosky, 2010, 2010 IEEE International Reliability Physics Symposium.

Electroless copper deposition for ULSI

Valery M. Dubin, Matthew Angyal, Y. Shacham-Diamand, 1995 .

Post Cu CMP cleaning process evaluation for 32nm and 22nm technology nodes

L. Economikos, Jianping Zheng, J. Muncy, 2012, 2012 SEMI Advanced Semiconductor Manufacturing Conference.

Geometry, kinetics, and short length effects of electromigration in Mn doped Cu interconnects at the 32nm technology node

M. Angyal, Baozhen Li, V. McGahay, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

Electromigration-resistance enhancement with CoWP or CuMn for advanced Cu interconnects

Cathryn Christiansen, Baozhen Li, Terence Kane, 2011, 2011 International Reliability Physics Symposium.

High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell

D. Mocuta, C. Norris, C. Radens, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Integration of multi-level copper metallization into a high performance sub-0.25 /spl mu/m CMOS technology

T. Lii, M. Angyal, H. Kawasaki, 1998, Proceedings of the 1998 Second IEEE International Caracas Conference on Devices, Circuits and Systems. ICCDCS 98. On the 70th Anniversary of the MOSFET and 50th of the BJT. (Cat. No.98TH8350).

Reliability Challenges in Copper Metallizations arising with the PVD Resputter Liner Engineering for 65nm and Beyond

J. Gill, E. Kaltalioglu, O. Aubel, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.