I. Tortorelli

Impact of material composition on the write performance of phase-change memory devices

A. Pirovano, R. Bez, D. Ielmini, 2010, 2010 IEEE International Memory Workshop.

A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5

A. Pirovano, D. Ielmini, A. Redaelli, 2009 .

Overcoming Temperature Limitations in Phase Change Memories With Optimized ${\rm Ge}_{\rm x}{\rm Sb}_{\rm y}{\rm Te}_{\rm z}$

Elisabetta Palumbo, Paola Zuliani, Innocenzo Tortorelli, 2013, IEEE Transactions on Electron Devices.

A Reliable Technique for Experimental Evaluation of Crystallization Activation Energy in PCMs

A. Pirovano, D. Ielmini, A. Lacaita, 2008, IEEE Electron Device Letters.

Impact of the current density increase on reliability in scaled BJT-selected PCM for high-density applications

A. Pirovano, I. Tortorelli, A. Benvenuti, 2010, 2010 IEEE International Reliability Physics Symposium.

Electrical and Thermal Behavior of Tellurium Poor GeSbTe Compounds for Phase Change Memory

A. Pirovano, F. Pellizzer, I. Tortorelli, 2012, 2012 4th IEEE International Memory Workshop.

Internal Temperature Extraction in Phase-Change Memory Cells During the Reset Operation

A. Pirovano, F. Pellizzer, I. Tortorelli, 2012, IEEE Electron Device Letters.

Phase Change Memory technology for embedded non volatile memory applications for 90nm and beyond

P. Zuliani, F. Pellizzer, I. Tortorelli, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

In-memory neural network accelerator based on phase change memory (PCM) with one-selector/one-resistor (1S1R) structure operated in the subthreshold regime

A. Pirovano, D. Ielmini, I. Tortorelli, 2023, International Memory Workshop.